M-BOND 450 B Search Results

mjg-2

Abstract: M-prep neutralizer instruction bulletin b-130 "Strain Gage" M-BOND 600 M-BOND 610 FOR TRANSDUCERS M-BOND m-bond 450 b mylar tape strain gage
Contextual Info: M-Bond 450 For Transducers Vishay Micro-Measurements Strain Gage Adhesives for Transducer Applications OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: M-Bond 450 • • • • • • • • • • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper

dupont mylar rohs

Abstract: mjg-2 M-prep neutralizer mylar tape dupont mylar Vishay GT-14 GT-14 pressure pads
Contextual Info: M-Bond 450 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • • • • • • • • • • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A

Vishay Conditioner A

Abstract: GT-14 dupont mylar rohs m-bond 450 b
Contextual Info: M-Bond 450 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A RoHS • M-Prep Neutralizer 5A COMPLIANT • GSP-1 Gauze Sponges

Contextual Info: M-Bond 450 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol  Silicon-Carbide Paper  M-Prep Conditioner A  M-Prep Neutralizer 5A  GSP-1 Gauze Sponges  CSP-1 Cotton Applicators

cancer data

Abstract: 14032 m-bond 450 b
Contextual Info: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part A November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM055G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)

transistor A 27611

Abstract: 27611 LD50 ketone 14033
Contextual Info: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part B November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM056G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)

BD 139 140

Abstract: P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ID-2250
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2009 - Rev 19-Jan-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: TR5270 LEDs CxxxTR5270-Sxx00 175- m CxxxTR5270-Sxx00-3 (250- m) Data Sheet Cree’s TR5270 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting

Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2009 - Rev 15-Feb-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

max cw 4004

Abstract: XP1026-BD-EV1 30SPA0553 DM6030HK P1026-BD XP1026-BD XP1026-BD-000V ID213
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

NE900474-13

Abstract: ne900474-15 NE9004 NE900474 NE900400G NE900400
Contextual Info: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13, <15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED

alpha detector

Abstract: CDC7622 on/gold detectors circuit
Contextual Info: Universal Chip Mixer and Detector Schottky Barrier Diodes EBA lpha CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 W ire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

180 Degree hybrid ku band

Contextual Info: Universal Chip Mixer and Detector SchotUcy Barrier Diodes EBAIph CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

Contextual Info: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

NE9004

Abstract: NE900400 NE900474-15 NE900474-13 NE900400G NE9001 MC 88000
Contextual Info: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED

Chip Advanced Tech

Abstract: XP1006 XP1006 bonding
Contextual Info: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing

P1021

Abstract: 18MPA0567 DM6030HK TS3332LD XP1021-BD XP1021-BD-000V XP1021-BD-EV1
Contextual Info: 17.0-22.0 GHz GaAs MMIC Power Amplifier P1021-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

P1014

Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit

2N6580

Abstract: 2N6583 2N6581 OTC433C OTC4830 OTC483Q SVT400-3 SVT400-5
Contextual Info: OPTEK TECHNOLOGY INC MAE D • aCJDlBflS blS ■ Product Bulletin OHC4830 August 1990 OTK W NPN Power Switching Transistor Die .O P T E K -r-35-\°\ Type OTC483Q 450V, 5A Applications • • • • • Switching Regulators PWM Inverters Motor Controls

lg 5528

Contextual Info: MwT-6 GaAs FET DEVICE PRELIMINARY M IC R O W A V E TECHNOLOGY MICROWAVE 4268Solar Way; Fremont,. CA 94538 415-651-6700 FAX 415-651-2208 TECHNOLOGY 37E D blSMlüQ GQDGÜ3S S MRUV FEATURES • 0.3 MICRON REFRACTORY METAL/GOLD GATE • AIR BRIDGE TECHNOLOGY • DIAMOND-UKE CARBON DLC PASSIVATION

t6060

Abstract: T-6060
Contextual Info: OPTEK TECHNOLOGY INC 40E d • L ? ciasaG oGG^ai a ta ■ otk I c iv Product Bulletin OTC1015 August 1990_ NPN Power Darlington Die "T'33 ^ Types OTC1015, OTC6030, OTC6050 450V, 20A Schematic Note 7 Base 1 o i - K Q1

MH26206

Abstract: MH17478 9485PC 9485P ASTM D-3330 kraft paper technical water dispenser 9442 9482PC UL-746C silicone
Contextual Info: 3 Adhesive Transfer Tapes with Adhesive 350 9442 • 9445 • 9482PC • 9485PC • 9485EK • 9675 Technical Data Product Description Construction September, 2002 These 3M Adhesive Transfer Tapes with 3M™ Adhesive 350 are a modified acrylic adhesive ideal for very high-bond strength to many surfaces. They have excellent

SVT-6060

Abstract: oms 450 SVT6000 SVT6060 SVT-6000 2N3467 DTC6050 OTC1015 OTC6030 OTC6050
Contextual Info: OPTEK TE CH NO LOG Y INC Product Bulletin OTC1015 August 1990_ MAE D L h a s s a 000130^ OTK ata SQ7. u r I c rv NPN Power Darlington Die Types OTC1015, OTC6030, QTC6050 450V, 20A Collector Schematic Note 7 Base 1 0- n r “ *! Q1 Q2 D2 R1

P1014

Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing