NE900474-13
Abstract: NE900474-15 NE9004 NE900400G NE900 NE9002 AN-1001 NE9000 NE9001 UM1000
Contextual Info: NE9004 SERIES Ku-BAND POWER GaAs MESFET FEATURES • DESCRIPTION NE900474-13, -15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 35 The NE9004 is a 0.5 micron recessed gate GaAs power FET for commercial and space amplifier and oscillator applications to 20 GHz. This device is part of the NE900 series of KuBand power transistors which includes the NE9000, NE9001
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NE9004
Abstract: NE850R5 9002 NE85001 NE9000 NE9001 ne900
Contextual Info: Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 Linear Gain dB 21.0 NE850R5 18.0 NE9001/9002 NE9000 15.0 12.0 NE1280 NE85001 9.0 6.0 NE9004 3.0 0.3 10.0 1.0 30.0 Frequency (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
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NE900474-15
Abstract: NE900474 NE900474-13 14012 cl NE9004 NE900400G DS 45-800
Contextual Info: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED
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NE9004
Abstract: NE900400 NE900474-15 NE900474-13 NE900400G NE9001 MC 88000
Contextual Info: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED
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NE900474-13
Abstract: ne900474-15 NE9004 NE900474 NE900400G NE900400
Contextual Info: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13, <15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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ne900075
Abstract: NE9000
Contextual Info: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27
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NE800296
Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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NE900474-15
Abstract: NE900474-13 NE9004 NE900474 marking 34
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 74 YEAR INDICATOR +0.15 f 1.8 -0.05 2 PLACES R 0.25, 4 PLACES GATE 0.5 TYP 3.0 MIN SOURCE 3.5±0.3 MARKING MONTH INDICATOR B 3.1±0.1
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NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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NE800495-4
Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
Contextual Info: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D
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