M 82S181 Search Results

N82S181F

Abstract: 82LS181 82S180 82S181 S82S181
Contextual Info: JANUARY 1983 BIPOLAR MEMORY DIVISION 82S180 O.C.J/82S181 (T.S. 8192-BIT BIPOLAR PROM (1 0 2 4 x 8 ) PIN CONFIGURATION DESCRIPTION FEATURES The 82S180 and 82S181 are fie ld program m able, w hich means th a t cu sto m patte rn s are im m ed iate ly available by

N82S185

Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
Contextual Info: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h

N82S141

Abstract: 82HS191 MCM10149 N82S137 74S301 N82LS181 CE23 MCM7620 N82HS191 N82S130
Contextual Info: MAY 1982 BIPOLAR M EM O RY DIVISION 16,384-BIT BIPOLAR PROM 2 0 4 8 x 8 _ 82HS191 (T.S.) DESCRIPTION PIN CONFIGURATIONS T h e 82H S 191 is fie ld p r o g r a m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s a re im m e d ia te ­

82S181A

Contextual Info: 82S181A Signetics 8K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES APPLICATIONS T h e 8 2S 1 8 1 A is field-program m able, which m eans that custom patterns are • Address access time: 55ns max • Prototyping/volume production

6301-1 prom

Abstract: MMI 6301-1 93427C 6331-1 MMI 6341-1 dm74s472 PROM intel 3601 DM74S570 MMI 6330 N82S23
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 82HS195 T.S. 16,384-BIT BIPOLAR PROM (4 0 9 6 x 4 ) A d v a n c e Inform ation DESCRIPTION FEATURES The 82H S 19 5 is fie ld p ro g ra m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s are im m e d i a te ­

MMI 6381

Abstract: 53C881 53C881A 63C881 63C881A 63LS880 63LS881 63PS881 82HS181 RAYTHEON ROM
Contextual Info: - 31 - 6 3 8 0 m « tt & im*m OC X -i y * y me max ns) TCAC max (ns) TOH max (ns) It TOE m ax (ns) TOD max: (ns.) m (Ta=25*C) V D D or V C C (V) A I DD typ OaA) I DD max OuA) I IL/VIIL raax (mA/V) -h/m%« VIL max (V) ai Œ I IH/VIIH max (mA/V) VIH min (V)

77S185

Abstract: mil-prf 38510 cross index 77S180 77S184 marking 209e
Contextual Info: INCH-POUND MIL-M-38510/209E 23 February 2006 SUPERSEDING MIL-M-38510/209D 30 September 1986 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 8192-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995

Contextual Info: INCH-POUND MIL-M-38510/209F 15 April 2013 SUPERSEDING MIL-M-38510/209E 23 February 2006 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 8192-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995

Signetics 2650

Abstract: SIGNETICS 2656 2kx8 rom 2655 ppi 128X8 2650 signetics 74LS240 1K x4 static ram application note 1K x4 static ram 1A08-1A0F
Contextual Info: 2656-1 PRELIMINARY SPECIFICATION PIN CONFIGURATION DESCRIPTION FEATURES The. Signetics 2656 System Memory Inter­ face SMI is a mask programmable circuit with on-chip memory, I/O, and timing (clock) functions. It is useable either in 2chip or m ulti-chip m icrocom puter systems.

18-1-EAD

Abstract: transistor sj 13005 d wf vqc 10 d a6 13005 2 13005 TRANSISTOR 16X64 led matrix EEG Project with circuit diagram MARKING code WMM RF transistor pr 8501 b SEC 13005
Contextual Info: MIL-M-38510/209D 30 SEPTEMBER 1986 MIL-M-38510/209C 24 October 1983 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, 8192-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON T h is s p e c if ic a tio n I s approved fo r use by a l l Depart­

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

N82S181AN

Abstract: N82S181 82S181 82S181A N82S181A 2TNC N82S SIGNETICS YH02
Contextual Info: Philips C o m p o n e n ts -S ig n e tic s Document No. 853-0130 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S181 / 82S181A 8K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S181 and 82S181A are field

CE34

Contextual Info: Philips C o m p o n e n ts -S ig n e tic s Document No. 853-0130 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S181 / 82S181A 8K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S181 and 82S181A are field

diode LT 42 PR 3002

Abstract: 5603A intersil b34 DIODE schottky ic 74s201 mmi 6331 74s188 74S474 74S288 FU 3024 82s141
Contextual Info: Signetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Introduction S c h o ttk y T T L uses a d io d e cla m p design to ensure th e highest speed possible at T T L lo g ic levels ty p ic a lly 3ns gate p ro p a g a tio n de la y and 9 0 M H z f lip f lo p to g gle rate. H o w ever th e y rem ain c o m p a tib le w ith

N82S181N

Abstract: CE12
Contextual Info: Philips Components-Signetics Document No. 8 5 3 -0 1 3 0 ECN No. 86487 Date of Issue N ove m b e r 11, 1986 S ta tu s P ro du ct S p ecification 8 2 S 1 8 1 / 8 2 S 1 8 1 A 8K-bit TTL bipolar PROM M em ory Products DESCRIPTION FEATURES The 8 2 S 1 81 and 8 2 S 1 8 1 A are field

Creative IC CT 1975

Abstract: 74s188 programming sd 431 sn74s454 MMI TiW PROM programming procedure ci la 7610 74S472 PROM PROGRAMMING MB7122H 74S287 programming instructions FZH 161
Contextual Info: Part of the Harris Spectrum of Integrated Circuits 44 HARRIS Q Quantum e! scironic#500 Sox 391262 B ra m ie y 1984 Harris Bipolar Digital Data Book 2018 Harris Semiconductor Bipolar Digital Products represent state-of-the-art production in density and performance.

27S43

Contextual Info: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs

Intel 8245

Abstract: 87S181 63S881 AM27S181 82HM181 TBP28S86 M7581 RAYTHEON ROM Bipolar ROM 1K X 4 Intel 8244
Contextual Info: 1 0 2 4 X 82H M 181 8 1 9 2 Bit 8 HMOS ROM GENERAL DESCRIPTION • • • • • • • • • The 82HM181 Is a high speed 8,192 b it read-only memory (ROM) organized 1024 words by 8 bits. The device is fabricated using In te rsil’s SELOX HMOS technology, a

P80A49H

Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Contextual Info: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.

Intel mcs-40

Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
Contextual Info: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough

93451 prom

Abstract: 93451 8223 prom 63S881 87S181 TBP28S86 s3 tech
Contextual Info: DlííñÜi^IL 1024 GENERAL DESCRIPTION FEATURES • • • • • • • • • X 82HM181 8192 Bit 8 HMOS ROM The 82HM181 is a high speed 8,192 b it read-only m em ory (ROM) organized 1024 w ord s by 8 bits. The device is fa b rica te d using In te rs il’s SELOX HMOS tech nolog y, a

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

1k x 8 bipolar

Abstract: 82S181 82HS181 AFN-02064A
Contextual Info: inteT 82S181/82HS181 8K 1K x 8 BIPOLAR M 82S181 70 ns Max. 82HS181 50 ns Max. Fast Access Time: 50 ns for 82HS181 Low Power Dissipation: 0.08 mW/Bit Typically Four Chip Select Inputs for Easy Memory Expansion • Three-State Outputs ■ Hermetic 24-Pin DIP

82S181A

Contextual Info: Philips Components-Signetics Document No. 853-0130 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S181 / 82S181A 8K-bit TTL bipolar PROM Memory Products DESCRIPTION The 82S181 and 82S181Aarefield programmable, which means that