N82S Search Results

82S185

Abstract: 82S184 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185
Contextual Info: FEATURES • Low power dissipation: SO^W/bit typ • Address a cce ss time: N82S184/185: 100ns max S 8 2 S 184/185: 150ns max • Input loading: N82S184/185: -100MA max S82S184/185: -150/iA max • On-chip address decoding • Output options: 82S184: Open collector

N82S09I

Abstract: 82S09 82S101 N82S09 S82S09
Contextual Info: S ig n e tic s Mem ories - Bipolar Ram N82S09 — 576 Bit Bipolar Ram G E N E R A L D E S C R IP TIO N The organization o f this device allow s b y te m anip u la tio n o f d ata, in clu d in g p a rity . W here p a rity is n o t m o n ito re d , the n in th b it can be used as a flag or status in d ic a to r fo r each

74s* programming

Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131

Contextual Info: Signetics Memories - Bipolar Ram C O N N E C TIO N D IA G R A M N82S208 - 2048 Bit Bipolar Ram 256 x 8 G E N E R A L DE SC R IPTIO N The 82S208 data inputs and o u tp u ts are com m o n (com m on I/O ) w ith separate o u tp u t disable (OD) line th a t allow s ease

82S230

Abstract: 82S231 N82S230N N82S231N Signetics TTL 82S130 S82S23
Contextual Info: Signetics Memories - Bipolar Rorn N82S230, N82S231 - 2048 Bit Bipolar Rom 512 x 4 C O N N E C T IO N D IA G R A M Both 82S230 and 82S231 devices are available in the commercial and m ilitary temperature ranges. For the commercial temperature range (0 °C to +75°C) specify

SIGNETICS 268

Abstract: Signetics ITT gemini 24 SIGNETICS N82S25 N3101 N74S189 N74S89 ifr 540 gemini
Contextual Info: Signetics Memories - Bipolar Ram N82S25, N3101 A , N74S89 and N 74S189 Series Bipolar Scratch Pad Mem ory 1 6 x 4 Continued 64 Bit BLOCK D I A G R A M G N D = (8 ) ( ) * DAT* IN *N D o u t P in n u m b e r PLEA SE Q U O TE STOCK NO. A N D M A N U F A C T U R E R S P A R T NO. WHEN O R DERIN G

N82S137F

Abstract: N82S136 82S137 82S136 N82S136F N82S137 SIGNETICS prom 2.1 connection diagram
Contextual Info: S ig n e tic s Memories - Bipolar Proms N82S136, N82S137 — 4096 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 3 6 and 8 2 S 1 3 7 are field programmable. The standard 8 2 S 1 3 6 and 8 2 S 1 3 7 are supplied w ith all outputs

N82S123F

Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
Contextual Info: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which

82s185

Contextual Info: FEATURES • Low power dissipation: 50/xW/bit typ • Address access time: N82S184/185: 100ns max S82S184/185: 150ns max • Input loading: N82S184/185: -1 0 0 MA max S82S184/185: -150/xA max • On-chip address decoding • Output options: 82S184: Open collector

smd marking WS

Contextual Info: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs Ultra-Fast Access Time — 45 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • Fast Programming

2 k bipolar prom

Abstract: 3A4C
Contextual Info: WS57C191 C/291 C MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — *ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

82S104

Abstract: N82S105N ifr 540 82S105 N82S106N N82S107N n82s106 1x48 N82S104N
Contextual Info: Signetics Memories - Bipolar FP LS N82S106, N82S107 Field Pro­ grammable RO M Patch 16 x 48 x 8 Cont. R E FER EN C E T A B L E TYPE NO. STOCK NO. N82S106N N82S107N 56478R 56479G O U T L IN E DRW G. NO. 5 5 IM82S104/105 Field Programmable Logic Sequencer

N82S126F

Abstract: N82S129N N82S129F N82S126N 82S129 N82S126 itt 129 ane fuse led matrix 32X32 82S126
Contextual Info: S ig n e tic s Memories - Bipolar Proms N82S126, N82S129 - 1024 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP TIO N The 82S 126 and 82S 129 are fie ld program m able, w hich means th a t custom patterns are im m e diately available by

82S2708

Abstract: N82S2708F N82S2708 S82S2708
Contextual Info: S ig n e tic s Memories - Bipolar Proms- N82S2708 - 8192 Bit Field Programmable Bipolar Prom CONNECTION DIAGRAM GENERAL DESCRIPTION The 82S2708 is field programmable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data sheet. The standard

BIPOLAR PROM PROGRAMMING SPECIFICATION

Contextual Info: WA F E R SCALE INTEGRATION 3 C E ^SBTb^O D 00QGS2Ü b IÜIAF Vl^S57C43C ADVANCE INFORMATION WAFERSCALE INTEGRATION, INC. T - ' V ß - T P i HIGH SPEED 4K x 8 CMOS PROM/RPROM KEY FEATURES Pin Com patible with AM27S43 and N82S321 Bipolar PROMs • Ultra-Fast Access Time

Contextual Info: WS57C43B HIGH SPEED 4K x 8 CMOS PROM/RPROM K E Y FEA TU R E S • U ltra-Fast A ccess Tim e • Pin C om patible with A m 27S 43 and N82S321 B ipolar P RO M s — 35 ns • Low Pow er C onsum ption Im m u ne to Latch-U p • Fast Program m ing — Up to 200 mA

Contextual Info: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — *ACC = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

smd marking 25J

Contextual Info: WS57C191 C/291 C HIGH SPEED 2K X 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — Ucc = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • ESD Protection Exceeds 2000V

WS57C191C55DMB

Abstract: N82S1
Contextual Info: WS57C191C/291C MILITARY HIGH SPEED 2Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time f ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

Contextual Info: WS57C191 C/291 C PRELIMINARY HIGH SPEED 2K x 8 CMOS PROM/RPROM K E Y FEA TU R E S • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns *cs 12 ns • Low Power Consumption • immune to Latch-UP — Up to 200 mA

smd marking 25J

Abstract: WS57C291C-45TI WS57C291C-35TMB MARKING 25J
Contextual Info: WS57C191C/291C HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns — t CS = 12 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming

SIGNETICS

Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131

82S114

Abstract: N82S114N fet ifr 540 82S214 82S215 N82S114F S82S114F signetics 82S 56306E
Contextual Info: S ig n e tic s Memories - Bipolar Proms C O N N E C T IO N N82S114 - 2048 Bit Field Programmable Bipolar Prom 256 x 8 G E N E R A L D E S C R IP T IO N T h e 8 2 S 1 14 is field program m able and include on-chip decoding and 2 ch ip enable inputs far ease o f m em ory

82S210

Abstract: N82S210 N82S210F S82S210 S82S210F
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 2304-BIT BIPOLAR RAM 256 X 9 DESCRIPTION The 82S210 data inputs and outputs are common (common I/O) w ith separate out­ put disable (OD) line that allows ease of read/write operations using a common bus. 82S210 (T.S.) (0°C to 75 °C) specify N82S210F or N and