NE566
Abstract: 566 function generator NE566N Signetics NE566 NE566 applications NE566T triangle wave function generator 566 SE566 se 562 capacitor
Text: Signetics Integrated Circuits - Phase Locked Loop C O N N E C T IO N D IA G R A M NE566 Function Generator G E N E R A L DE SC R IPTIO N The SE /N E 566 F u n ctio n G enerator is a voltage c o n tro lle d oscilla to r o f excep tional lin e a rity w i th buffe re d square wave
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NE566
566 function generator
NE566N
Signetics NE566
NE566 applications
NE566T
triangle wave
function generator 566
SE566
se 562 capacitor
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SIGNETICS 268
Abstract: Signetics ITT gemini 24 SIGNETICS N82S25 N3101 N74S189 N74S89 ifr 540 gemini
Text: Signetics Memories - Bipolar Ram N82S25, N3101 A , N74S89 and N 74S189 Series Bipolar Scratch Pad Mem ory 1 6 x 4 Continued 64 Bit BLOCK D I A G R A M G N D = (8 ) ( ) * DAT* IN *N D o u t P in n u m b e r PLEA SE Q U O TE STOCK NO. A N D M A N U F A C T U R E R S P A R T NO. WHEN O R DERIN G
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N82S25,
N3101
N74S89
N74S189
SIGNETICS 268
Signetics
ITT gemini
24 SIGNETICS
N82S25
ifr 540
gemini
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LM308N
Abstract: LM308AN LM103 LM308 LM30BAN LH2108 LM108 LM108A LM108F LM308A
Text: Signetics Integrated Circuits - Operational Am plifier LM108 Series-Precision Operational Amplifier C O N N E C T IO N D IA G R A M IN T R O D U C T IO N T h e L M 1 0 8 / 1 0 8 A se rie s are p re c is io n o p e ra tio n a l a m p lifie rs h a v in g sp e c ific a t io n s a fa c t o r o f ten better
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LM108
LM108/108A
LM308
LM108A/
400pA
300fiA
LM308N
LM308AN
LM103
LM30BAN
LH2108
LM108A
LM108F
LM308A
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2680 RAM
Abstract: No abstract text available
Text: Signetics Memories-MOS RAMS C O N N E C T IO N D IA G R A M 2680—4096 Bit Read/Write Dynamic MOS RAM 4096 x 1 G E N E R A L D E S C R IP T IO N T h e 2 6 8 0 in c o r p o r a te s t h e la te s t m e m o r y design fe a tu r e s a n d c a n b e u se d in a w id e v a r ie t y o f a p p lic a t io n s , f r o m
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signetics ne540
Abstract: NE540 NE540L SE540 Signetics SE540
Text: S ig n e tic s Integrated C ircu its-A u dio Circuits C O N N E C TIO N D IA G R A M NE540 Power Driver G E N E R A L DE SC R IPTIO N The N E /S E 540 is a m o n o lith ic , class A 8 pow er a m p lifie r designed specifically to drive a pair o f com plem entary
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NE540
NE/SE540
SE540
NE540
signetics ne540
NE540L
Signetics SE540
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75324F
Abstract: 75324N ITT TTL
Text: Signetics Interface - Mem ory C O N N E C T IO N D IA G R A M 75324 — Memory Driver with Decode Inputs N P A C K A G E G E N E R A L D E S C R IP T IO N T h e 7 5 3 2 4 is a m o n o lit h ic m e m o r y d riv e r w it h d e c o d e in p u ts d e sig n e d f o r use w ith m a g n e tic m e m o rie s. T h e d e vice
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400mA
400mA
75324F
75324N
ITT TTL
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NE5554N
Abstract: NE5553N NE5555N ne5553 ne5554 NE5555 NE5552 NE5551N NE5552N ne5551
Text: Signetics Integrated C ircuits - V o ltage Regulator NE5551/2/3/4/5 Series Dual Polarity Tracking Regulator C O N N E C T IO N D IA G R A M T PACKAGE * v OUT G E N E R A L DE SC R IPTIO N The N E /S E 5 5 5 1 , 2, 3, 4 , 5 are dual p o la rity tracking regulators designed to produce balanced or unbalanced
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NE5551/2/3/4/5
NE/SE5551
78MXX
79MXX
300mA
NE5554N
NE5553N
NE5555N
ne5553
ne5554
NE5555
NE5552
NE5551N
NE5552N
ne5551
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A711
Abstract: HA711CN MA711 HA711 HA711C
Text: Siginetics Integrated Circuits - Comparators C O N N E C T IO N D IA G R A M juA711 Series — Dual Voltage Comparator K PA CKAG E G E N E R A L D E S C R IP T IO N T he m A 71 1 H igh Speed D u al V o ltag e C om parator features low offset voltage, high sensitivity and a wide in p u t voltage
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juA711
jiA71
iA711C
A711
HA711CN
MA711
HA711
HA711C
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SIGNETICS ne540
Abstract: NE540L NE540 NE540 equivalent Signetics SE 540 SE540L ne640 SE540 Signetics SE540 SO26
Text: S g ilD t iG S POWER DRIVER LINEAR INTEGRATED CIRCUITS PIN CONFIGURATION DESCRIPTION T he 5 4 0 is a m onolithic, class A 13 pow er am plifier designed specifically to drive a pair of com plem entary o u tpu t transis tors. The device features low standby current ye t retains a
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SE540
NE540
SE540
SIGNETICS ne540
NE540L
NE540 equivalent
Signetics SE 540
SE540L
ne640
Signetics SE540
SO26
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ram 2111 signetics
Abstract: 2111 ram 2111N Signetics SE 540
Text: S ig n e tic s M le m o r ie s -M O S -R A M S 2111-1024 Bit Static MOS RAM 256 x 4 C O N N E C T IO N D IA G R A M a 3U G E N E R A L D E S C R IP T IO N T h e 2 1 1 1 se rie s is a h ig h -p e rfo rm a n c e , lo w -p o w e r sta tic read /w rite R A M .
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56364G
ram 2111 signetics
2111 ram
2111N
Signetics SE 540
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IFR 640
Abstract: 5637-1 SIGNETICS 268 21F02 gemini SIGNETICS 14 PIN
Text: S ig n e tic s Memories M O S R A M S 21F02-1024 Bit Read/Write Static MOS RAM 1024 x 1 G E N E R A L D E S C R IP T IO N The 21 F 0 2 is a high speed static random access m em ory element using n-channel M O S devices integrated on a m onolithic array. It uses fu lly dc stable (static) circuitry
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21F02â
21F02
IFR 640
5637-1
SIGNETICS 268
gemini
SIGNETICS 14 PIN
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signetics 2608
Abstract: k 2608 24 SIGNETICS
Text: S ig n e tic s Memories M O S R O M 2608/CN0004I—8192 Bit Static MOS ROM 1024 x 8 Teletext Character Generator ROM FE A TU R E S • Static operation—no clocks • Access time: 2608: 550ns 2608-1: 450ns • Single 5V power supply and ground power connections
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2608/CN00041â
550ns
450ns
400mW-
24-pin
signetics 2608
k 2608
24 SIGNETICS
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K4096
Abstract: 1404a ITT 6570 MM2102 MM2112 intel 2101 MK4102 MK4007 MK1007 KS 2102
Text: S ig n e tic s M em o rie s-M O S RAMs IN T E L 2101 2111 2112 2 1 0 2 /2 1 0 2 A 1103 2107B 2104 2115 2125 2 11 4 2 30 8 2316E 2 70 4 2708 1402A 1403A 1404A 1405A M O STEK M K4007 M K4102 M K4096 M K4027 M K30000 M K 34000 M K3708 M K1007 M OTOROLA 2 102/A
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2102/2102A
2107B
2316E
MK4007
MK4102
K4096
MK4027
MK3708
K1007
1404a
ITT 6570
MM2102
MM2112
intel 2101
MK1007
KS 2102
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SN75207
Abstract: No abstract text available
Text: S ig n e tic s Interface - Mem ory 75S207 — Dual MOS Sense Amp C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 7 6 S 2 0 7 is a h ig h sp e e d d u a l se n se a m p lifie r th a t is fu n c t io n a lly e q u iv a le n t a n d p in c o m p a t ib le to the S N 7 5 2 0 7 .
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75S207
76S207
SN75207.
SIM75207
SN75207
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NE585-9N
Abstract: DIP-22 NE585-6N signetics cerdip NE585-9 CERDIP16
Text: Signetics Interface — Display Driver NE585 — Anode Driver C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e N E 5 8 5 is an A n o d e Driver for m ultiplexed 7 -segment Çfas discharge displays. T he display segments are driven b y floating current sources
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NE585
NE585
NE585-9N
DIP-22
NE585-6N
signetics cerdip
NE585-9
CERDIP16
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8X300
Abstract: BT32
Text: Signetics Microprocessors 8X300 Bipolar Microprocessor C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N The Signetics 8 X 3 0 0 is a m onolithic, high-speed m icro processor im plem ented w ith bipolar S c h o ttk y technology. A s the central processing unit, C P U , it allow s 16-bit
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8X300
16-bit
BT32
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1489AN
Abstract: MC1489N MC1489AN MC1489 signetics signetics MC1489
Text: Signetics Interface - Line Receiver MC1489N MC1489AN Quad Line Receivers C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e M C 1 4 8 9 / M C 1 4 8 9 A are quad line receivers designed to interface data terminal equipm ent w ith data com m unicat
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MC1489N
MC1489AN
MC1489/MC1489A
RS232C.
1489AN
MC1489 signetics
signetics MC1489
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rom 1024x8
Abstract: 2308 rom Intel 4201 Intel 2708 intel 8308 rom 1024 1024x8 intel 2308
Text: S ig n e tic s Memories M O S RO M 2607-8192 Bit Static MOS ROM 1024 x 8 C O N N E C T IO N D IG R A M FEATURES • Static operation— no clocks • Access time: 4 5 0 n s max • Single 5 V pow er supply • T T L com patible inputs and outputs • Pow er dissipation: 5 25m W
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1024x8)
450ns
525mW
24-pin
rom 1024x8
2308 rom
Intel 4201
Intel 2708
intel 8308
rom 1024 1024x8
intel 2308
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TCA220
Abstract: TCA520 TCA520B TCA 875 Intergrated circuits vp 485 TCA 200 y 520B
Text: Signetics Intergrated Circuits - Operational Am plifiers C O N N E C T IO N D IA G R A M T C A 220 - Triple Operational Amplifier IN T R O D U C T IO N T he T C A 2 2 0 is a m onolithic integrated circuit, consisting of three identical high-gain amplifiers.
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TCA220
100mA.
TCA520
TCA520B
TCA 875
Intergrated circuits
vp 485
TCA 200 y
520B
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TDA1022
Abstract: A1022 Bucket Brigade musical instruments reverberation lc
Text: S ig n e tic s Integrated Circuits - General TDA1022 - Bucket Brigade Delay Line Q U IC K R E F E R E N C E D A T A G E N E R A L D E S C R IP T IO N T he T D A 1 0 2 2 is a M O S m on olith ic integrated circuit, generally intended to delay analogue signals e.g. delay
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TDA1022
A1022
Bucket Brigade
musical instruments
reverberation lc
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LM381 circuits
Abstract: LM381A LM381 LM381AN LM381N OF LM381 LM381 SIGNETICS
Text: S ig n e tic s Integrated Circuits - Low Noise Preamp LM381 Series Dual Low Nose Preamp C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he L M 3 8 1 / L M 3 8 1 A is a dual preamplifier for the am pli fication o f low level signals in applications requiring
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LM381
LM381/LM381A
120dB
112dB)
75kHz,
LM381 circuits
LM381A
LM381AN
LM381N
OF LM381
LM381 SIGNETICS
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Signetics 2650
Abstract: SIGNETICS 2656
Text: S ig n e tic s Microprocessors 2656—System Memory Interface C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 2 6 5 6 S y s t e m M e m o r y In te rfa c e S M I is a m a sk p r o g r a m m a b le c irc u it w ith o n -c h ip m e m o r y , I/O , and
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128x8
Signetics 2650
SIGNETICS 2656
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4027 ram
Abstract: 4027-3 ITT 4027 pin diagram 4027 4027 ttl 56482
Text: Signetics Memories - R A M 4027-4096 Bit Dynamic RA M C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 4 0 2 7 is fabricated with n-channe! silicon gate tech nology fo r high perform ance and high functional density, and uses a single transistor d ynam ic storage cell and
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16-pin
4027 ram
4027-3 ITT
4027 pin diagram
4027
4027 ttl
56482
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fet ifr 540
Abstract: MA740C uA740 A740 MA740C-T tvs 500
Text: Signetics Integrated Circuits - Operational Amplifiers C O N N E C T IO N D IA G R A M i i A740 Series — F E T Input Operational Amplifier G E N E R A L D E S C R IP T IO N T h e jiA 7 4 0 C is a special purpose high oerform ance operatio nal am plifier utilizing a F E T input stage for high input
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jiA740C
fet ifr 540
MA740C
uA740
A740
MA740C-T
tvs 500
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