LT230 Search Results

LT2306

Contextual Info: LT2306 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306 is the N-Channel logic enhancement mode power field ● RDS ON ≦37mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦49mΩ@VGS=4.5V

p-channel sot-23 .5A

Abstract: lt2307 P-CHANNEL 30V DS MOSFET
Contextual Info: LT2307 Pb-free P-Channel Enhancement Mode Mosfet FEATURES GENERAL DESCRIPTION The LT2307 is the P-Channel logic enhancement mode power 1. -30V/-3.2A, RDS(ON) =63mÙ@VGS=-10V field effect transistors, using high cell density, DMOS trench 2. -30V/-2.5A, RDS(ON) =80mÙ@VGS=-4.5V

LT2301A

Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V

Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V

LT2301A

Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V

LT230A

Contextual Info: Hall IC LT230A LT230A GaAs Hall IC for Noncontact Switch Unidirestional magnetic field-type 0.95 Z X 0.4 0.4 S 2.9±0.2 0.85 0.6 (Unit : Fmm) 2.9±0.2 1.9 0.4 • Features ¡Same temperature coefficient of magnetic flux density as ■ Outline Dimentions

LT2307

Contextual Info: LT2307 Pb-free P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2307 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMO S trench technology. This high density process is especially tailored

Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V

sharp1

Contextual Info: Hall 1C LT230A LT230A • GaAs Hall IC for Noncontact Switch Unidirestional magnetic field-type Features • Same temperature coefficient o f magnetic flux density as Outline Dimentions (Unit : Fmm) a magnet • O peration by sm all m agnet due to high se n s itiv ity

LT230A

Contextual Info: Hall IC LT230A GaAs Hall IC for Noncontact Switch Unidirestional magnetic field-type LT230A • Features Same temperature coefficient of magnetic flux density as a magnet ● operation by small magnet due to high sensitivity Operating point < 20mT ● Combining a GaAs Hall device and an IC in a compact

LT2306

Contextual Info: LT2306 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306 is the N-Channel logic enhancement mode power field ● RDS ON ≦37mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦49mΩ@VGS=4.5V

Contextual Info: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V

LT2301

Abstract: LT230
Contextual Info: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V

P-CHANNEL 30V DS MOSFET

Abstract: LT2307 p-channel sot-23 .5A
Contextual Info: LT2307 Pb-free P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2307 is the P-Channel logic enhancement mode power field effec t transistors, using high cell density, DMO S trench technology. This high density process is especially tailored

Contextual Info: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦115mΩ@VGS=2.5V

Ta7070

Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V

Contextual Info: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V

LT2306

Abstract: n-channel mosfet SOT-23
Contextual Info: LT2306 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306 is the N-Channel logic enhancement mode power field ● RDS ON ≦37mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦49mΩ@VGS=4.5V

Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON ≦30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦35mΩ@VGS=4.5V

LT2302

Contextual Info: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V

ES50N18LA2

Abstract: YTX14-BS YTZ10S MOTORCYCLE engine specifications yamaha mt-03 ES14AA2 PT12B YTZ14s GL1800 EXIDE GEL G 210
Contextual Info: 145372_CalCoastAdv 2/23/11 4:07 PM Page 1 145372_CalCoastAdv 2/23/11 4:07 PM Page 2 Sealed Maintenance Free Battery Features Sealed Post Prevents acid leakage, reduces corrosion, and extends battery life safety valve flame/arrestor relieves excess pressure

plasma ignition

Abstract: capacitive discharge ignition Ignition Transformer diode lt 316 LT230 ignition circuits "IGNITION TRANSFORMERS" Electronic ballast HID LT800 sidac trigger circuit
Contextual Info: Switching Gas Discharge Tubes Gas Plasma Voltage Dependent Switches RoHS LT Series The LT Series is a 2-terminal bi-directional, voltage triggered switch is designed for ignition circuits used in high pressure HID lighting. Switching voltages for the devices are fixed depending

LT3600T

Abstract: ta602ld EATON CA08101001E HLD3600 hld3600f eaton ld3600 LDC-2500 LD3600 LD3600F HLD3400
Contextual Info: Series C Molded Case Circuit Breakers 125 – 600 Amperes 12-102 June 2005 L-Frame Vol. 1, Ref. No. [0614] Product Selection Table 12-175. Types LD, HLD and LDC Thermal-Magnetic Circuit Breakers with Interchangeable Trip Units Maximum Continuous Ampere Rating

HT12E HT12D

Abstract: Panasonic RELAY Cross Reference NEC OMRON N80C196KC16 MOS248 TDA2086A GOULD 500 COLOUR LCD DIGITAL STORAGE OSCILLOSCOPE 1NA114AP ICM72171 SL443A nec matrix Vacuum tube display
Contextual Info: Issued July 1996 021-928 Data Packs A-K RS data sheet/semiconductor manufacturers data sheet index Data Sheet Introduction RS data sheets form a unique source of detailed information regarding technical specifications, absolute maximum ratings and applications for engineers and designers working with RS products.