LT2306A Search Results
LT2306A Datasheets Context Search
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Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V |
Original |
lt2306a2007-ver4 | |
Ta7070Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V |
Original |
lt2306a380us2007-ver4ot-23+1 | |
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Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON ≦30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦35mΩ@VGS=4.5V |
Original |
lt2306a380usot-23 |