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    p-channel sot-23 .5A

    Abstract: lt2307 P-CHANNEL 30V DS MOSFET
    Contextual Info: LT2307 Pb-free P-Channel Enhancement Mode Mosfet FEATURES GENERAL DESCRIPTION The LT2307 is the P-Channel logic enhancement mode power 1. -30V/-3.2A, RDS(ON) =63mÙ@VGS=-10V field effect transistors, using high cell density, DMOS trench 2. -30V/-2.5A, RDS(ON) =80mÙ@VGS=-4.5V


    Original     		lt2307-30v/-3-30v/-2ot-23+2p-channel sot-23 .5ap-channel 30v ds mosfet PDF

    LT2307

    Contextual Info: LT2307 Pb-free P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2307 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMO S trench technology. This high density process is especially tailored


    Original     		lt2307-30v/-3-30v/-2appl20+2300usot-23 PDF

    P-CHANNEL 30V DS MOSFET

    Abstract: LT2307 p-channel sot-23 .5A
    Contextual Info: LT2307 Pb-free P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2307 is the P-Channel logic enhancement mode power field effec t transistors, using high cell density, DMO S trench technology. This high density process is especially tailored


    Original     		lt2307-30v/-3-30v/-2p-channel 30v ds mosfet+1p-channel sot-23 .5a PDF