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    LT2301 Price and Stock

    Samtec Inc

    Samtec Inc TW-30-04-L-T-230-130

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    Master Electronics TW-30-04-L-T-230-130
    • 1 -
    • 10 $12.34
    • 100 $9.26
    • 1000 $4.04
    • 10000 $4.04
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    Samtec Inc MTSW-150-24-L-T-230-100

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    Master Electronics MTSW-150-24-L-T-230-100
    • 1 -
    • 10 $10.45
    • 100 $8.20
    • 1000 $5.41
    • 10000 $5.41
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    Samtec Inc MTSW-140-24-L-T-230-100

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics MTSW-140-24-L-T-230-100
    • 1 -
    • 10 $10.45
    • 100 $8.20
    • 1000 $5.41
    • 10000 $5.41
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    LT2301 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LT2301A

    Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		lt2301a300us2007-ver3ot-23 PDF

    LT2301A

    Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		lt2301a2007-ver3 PDF

    Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		lt2301a300usot-23 PDF

    Contextual Info: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V


    Original     		lt2301300usot-23 PDF

    LT2301

    Abstract: LT230
    Contextual Info: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V


    Original     		lt2301300us2008-ver1ot-23+1lt230 PDF

    LT2301

    Abstract: 20A SOT-23
    Contextual Info: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V


    Original     		lt23012008-ver120a sot-23 PDF

    LSP5522L

    Contextual Info: LITELITE-ON SEMICONDUCTOR CORP. ON LITE DISCRETE DIVISION TVS SMAJ7.0A/ 9A SMAJ12A/ 15A SMAJ24A Schottky ESD B340A/ B360B B160/ B240A B2100A 1N5819WL FB340LM Bridge HD06 Switching BAT54A/C/S,WS 1N4148W/ WS LS4148W/WS BAV99W 2010 L15ESDL5V0NA-4 HDMI L30ESDL5V0C6-4 USB2.0


    Original     		smaj12a/smaj24ab340a/b360b+7b240ab2100a1n5819wlfb340lmbat54a/c/s1n4148w/lsp5522l PDF