LPDDR 8GB Search Results

MT29C4G48MAZBBAKQ-48 IT

Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)

MT29C4G48MAZAPAKQ-5

Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

MT29F4G08ABA

Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,

MT29F4G08ABA

Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
Contextual Info: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

MT29F4G08ABA

Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,

Contextual Info: BE230A Display Embedded System Features •TI 1GHz 32-bit ARM Cortex-A8 Single Core CPU •512MB LPDDR •eMMC 4.41 I/F 8GB •WINCE 6.0 CORE OS •Support SD/SDHC Card •7" TFT LCD with 800x480 Resulution •4-wired Resistive Touch Panel •1 x RS232C, 1xCAN BUS

Contextual Info: BE230C Display Embedded System Features IP66 for Front Bezel 512 •TI 1GHz 32-bit ARM Cortex-A8 Single Core CPU •512MB LPDDR •eMMC 4.41 I/F 8GB •WINCE 6.0 CORE OS •Support SD/SDHC Card •7" TFT LCD with 800x480 Resulution •4-wired Resistive Touch Panel

NT6DM16M16AD-T1

Abstract: 64M32 HP 3458 NT6DM16M16AD-T1I
Contextual Info: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ

lpddr2 256mb

Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
Contextual Info: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ

NT6DM16M

Contextual Info: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver

NT6DM32M16AD-T1

Abstract: NT6DM32M16AD NT6DM16M32AC-T1 NT6DM16M32AC NT6DM16M32AC-T3 216-ball NT6DM32M16AD-T3 256M16 lpddr2 256mb lpddr2 layout
Contextual Info: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver

LPDDR 8Gb

Abstract: lpddr2 256mb NT6DM32M16AD-T1 NT6DM32M16AD nanya lpddr2 spec
Contextual Info: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver

Contextual Info: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)

Epson EPD controller

Abstract: eMMC "EPD controller" usb pen drive block diagram EPD controller S4J21210B ARm cortexA9 GPIO S4J21230B epd driving S4J21220B
Contextual Info: S4J21010 High Resolution EPD Evaluation Platform • Overview The S4J21010 Evaluation Platform is used for the development of high resolution EPD solutions. It provides advanced display functions such as high speed page turning and smooth handwriting. This design package

Micron Technology

Contextual Info: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and

EDE2116ACBG

Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
Contextual Info: SELECTION GUIDE DRAM Selection Guide Document No. E1454E90 Ver.9.0 Date Published September 2009 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2009 DRAM Selection Guide CONTENTS 1. DDR3

movinand

Abstract: samsung 32GB Nand flash MLC memory Samsung 8Gb MLC Nand flash Flex-OneNAND Samsung Samsung 16GB Nand flash oneDRAM OneNAND Samsung 32Gb Nand flash SAMSUNG moviNAND samsung 2GB Nand flash
Contextual Info: Samsung Fusion Semiconductors Samsung Fusion Memory Software Flash DRAM The Next-Generation Technology for High-Performance Mobile Applications SRAM Logic What is Fusion Memory? As consumers continue their insatiable demand for higher-performance, ever-smaller

A1930

Contextual Info: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle

NT6TL128M32AQ-G1

Abstract: NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2
Contextual Info: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver

NT6TL256T32AQ

Abstract: NT6TL128M32AI hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory
Contextual Info: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver

NT6SM32M16AG-S1

Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb
Contextual Info: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of  Marking VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed

Lpddr2 Idd7

Abstract: COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32
Contextual Info: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed

Lpddr2 Idd7

Abstract: Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2
Contextual Info: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle

NT6SM16M16AG-S1

Abstract: lpddr2-s2 NT6SM16M16AG NT6SM16M16AG-S1I 128T64
Contextual Info: 256Mb LPSDR SDRAM NT6SM16M16AG NT6SM8M32AK Feature Options Fully synchronous; all signals registered on positive edge of z z Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed z z every clock cycle