LOW SATURATION PNP 40W TRANSISTOR Search Results

darlington power pack

Abstract: low saturation pnp 40w transistor 2SB1253 2SD1893 equivalent 2SD1893
Contextual Info: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm ● ● 0.7 Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V

C2320

Abstract: BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324
Contextual Info: BC 817W,BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W PNP Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W

5Cs transistor

Abstract: BC 170 transistor TRANSISTOR BC 807w Q62702-C2328
Contextual Info: PNP Silicon AF Transistor ● ● ● ● ● BC 807W BC 808W For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W NPN 2 3 1 Type BC 807-16W BC 807-25W BC 807-40W

Contextual Info: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 0.7 15.0±0.3 11.0±0.2 ● ● ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V

2SA794

Abstract: 2SC156 2sc1567 low saturation pnp 40w transistor 2SA794A
Contextual Info: Inchange Semiconductor Product Specification 2SA794 2SA794A Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1567/1567A ·High collector-emitter voltage VCEO APPLICATIONS ·For low frequency output driver ·Optimum for the driver stage of low

2SA794

Abstract: 2sc1567 2SA794A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION •With TO-126 package ·Complement to type 2SC1567/1567A ·High collector-emitter voltage VCEO APPLICATIONS ·For low frequency output driver ·Optimum for the driver stage of low

2SA794

Abstract: 2sc1567 2SA794A
Contextual Info: JMnic Product Specification 2SA794 2SA794A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1567/1567A ・High collector-emitter voltage VCEO APPLICATIONS ・For low frequency output driver ・Optimum for the driver stage of low

50V 1A power transistor

Abstract: 2SB993 2SD1363
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB993 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Collector Power Dissipation: PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max)@ IC= -4A

2SA794

Abstract: 2SA794A
Contextual Info: AOK AOK Semiconductor Product Specification 2SA794 2SA794A S ilicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC1567/1567A • High collector-emitter voltage V Ceo APPLICATIONS • For low frequency output driver • Optimum for the driver stage of low

2SB992

Abstract: 2SD1362
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB992 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Collector Power Dissipation: PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@ IC= -4A

2SA1939

Abstract: 2SC5196 2SC519
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1939 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 APPLICATIONS ·Power amplifier applications

2SA1263

Abstract: 2SA1263 equivalent transistor 2sC3180 2SC3180
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1263 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC3180 APPLICATIONS ·Power amplifier applications

Contextual Info: , Una. J TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1263 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(sa.r -2.0V(Min) @lc= -5A • Good Linearity of hFE

NTE291

Abstract: NTE292 NTE292MCP
Contextual Info: NTE291 NPN & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are

Contextual Info: ROHM CO LT D 40E D B T ô a û T ïT 0D0Sfc.03 K ÿ > y X £ /Transistors 1 BIR HM 2SB1291 7 -3 3 -/7 1 1 ° £ * V 7 ^ 7 ° U - * pNP y 'J □ > N7 > y * ^ '®:üM®^JiHllIlÆ /L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor 2 • ÿ fffÎ^ jÈ lS /D im e n sio n s Unit: mm

PNP Monolithic Transistor Pair

Abstract: NTE253MCP DSA0013913 SILICON COMPLEMENTARY transistors darlington
Contextual Info: NTE253 NPN & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.

2SA1284

Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA1284 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1284 is a silicon PNP epitaxial type transistor designed for high OUTLINE DRAWING Uni' * 5 .1 MAX voltage application.

2SB1291

Abstract: 2SD1720
Contextual Info: 2SB1291 h "7 > v 7s $ /T ra n s is to rs X tf 2SB1291 PNP > V =l > S ? > y X 2 Epitaxial Planar PNP Silicon Transistor fiJi;& li^ i# fii# i/ L o w Freq. Power Amp. ^•Jfí'+iíISl/Dimensions Unit: mm 1) VcE(sat) A 'lf t l'o V c E (s a t|= —0.3V (Typ.)

HB857

Abstract: 50V 1A PNP power transistor
Contextual Info: PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HB857 █ APPLICATIONS LOW FREQUENCY POWER AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… －55~150℃ T j ——Junction Temperature……………………………… 150℃

2SB1293

Abstract: 2SD1896
Contextual Info: h "7 > V ^ / T ransistors 2SB1293 2SB1293 x tf £ * y y JV7° U - 1M PNP y 1J □ > h ÿ > y 7 $ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor U V; v gi T • W f2^t>£El/D im ensions Unit: mm • ¡» fi 1) VcE(sat) Siï V cE (sa t)= —0.3V (T y p .) Ic / I b = —

Contextual Info: ROHM CO LTD 40E D 7 0 2 0 ^ QOOSfc.12 h 7 > v X $ / T ransistors T E3RHM 2SB1294 7=3 Z-i 9 I f c f £ * y 7 J l 7 l s - + M PNP y U □ > N ÿ > v 2 S B 1 2 i Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor T fJ iE l/D im e n s io n s Unit: mm 1) VcE(sat)

2SC4793 2sa1837

Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
Contextual Info: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688

ISA1284AS1

Abstract: ISC3244AS1
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 ISA1284AS1 PRELIMINARY FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Notice: This is not a final specification Some parametric are subject to change. DESCRIPTION OUTLINE DRAWING Unit：ｍｍ ISA1284AS1 is a silicon PNP epitaxial type transistor

2SB1531

Abstract: 2SD2340 1305s
Contextual Info: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000