2SC156 Search Results

2SC1568

Abstract: 2SA900
Contextual Info: Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING

2sc1567

Abstract: 2SA794 2SA794A 2SC1567A
Contextual Info: 2SC1567, 2SC1567A Power Transistors 2SC1567, 2SC1567A Silicon NPN Epitaxial Planar Type Package Dimensions AF High Power Driver Complementary Pair with 2SA794, 2SA794A • Features • High collector-em itter voltage V ceo • Optimum for the driver of 40~100W AF output

2sc1567

Abstract: 2SA794 High-Power NPN Silicon Power Transistor 2SC1567A 2SA7
Contextual Info: Inchange Semiconductor Product Specification 2SC1567 2SC1567A Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SA794/794A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency high power driver applications

2SA794

Abstract: 2SC156 2sc1567 low saturation pnp 40w transistor 2SA794A
Contextual Info: Inchange Semiconductor Product Specification 2SA794 2SA794A Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1567/1567A ·High collector-emitter voltage VCEO APPLICATIONS ·For low frequency output driver ·Optimum for the driver stage of low

204S60

Abstract: 2SC1568 2SA900 2SC15
Contextual Info: Power T ransistors 2SC15Ó8 2SC1568 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Am plifier for Low Voltage Supply Com plem entary Pair with 2SA900 • Features • Low collector-emitter saturation voltage VcEcsa» • High performance at low supply voltage

2SA794

Abstract: 2sc1567 2SA794A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION •With TO-126 package ·Complement to type 2SC1567/1567A ·High collector-emitter voltage VCEO APPLICATIONS ·For low frequency output driver ·Optimum for the driver stage of low

2SA900

Abstract: 2SC1568
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS

Contextual Info: 2SC1561 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)55 I(C) Max. (A)500m Absolute Max. Power Diss. (W)7.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2SC1567 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.65 h(FE) Max. Current gain.330

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Complementary to 2SA0794, 2SA0794A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA0900

Abstract: 2SC1568 2SC156
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SC1568

Abstract: 2sc* pnp 2SA0900 2SA900
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification Complementary to 2SC1568 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector to emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

2SA900

Abstract: 2SC1568
Contextual Info: JMnic Product Specification 2SA900 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1568 ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter

40170

Abstract: 2SC1569
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1569 DESCRIPTION •High Collector-Emitter Breakdown Voltage:V BR CEO= 300V(Min) ·DC Current Gain: hFE= 40-170 @IC= 50mA, VCE= 10V ·High Current-Gain Bandwidth Product APPLICATIONS

Contextual Info: 2SC1569 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)150m Absolute Max. Power Diss. (W)12 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.170

2SC1568

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2sc1567

Contextual Info: Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type Unit: mm For low-frequency high power driver Complementary to 2SA0794 and 2SA0794A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2

2sc1567

Abstract: 2SA0794 2SA0794A 2SC1567A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Complementary to 2SA0794, 2SA0794A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2sc1567

Abstract: 2SA0794 2SA0794A 2SA794 2SA794A 2SC1567A
Contextual Info: Power Transistors 2SA0794, 2SA0794A 2SA794, 2SA794A Silicon PNP epitaxial planar type Unit: mm For low-frequency output driver Complementary to 2SC1567 and 2SC1567A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1

BC132A

Abstract: 2SA900 2SC1568
Contextual Info: PANASONIC INDL/ELEKiSENI} 7SC D J t^32flS4 ÜODfl?! 1 "|T •_T- ys.-i7 S 2 A 9 '> U 2SA900 P N P x hf $ 4- '> t \/ ~f \s — i~ f l2 /S i P N P Epitaxial Planar Power Amplifier > ~fl) S > $ U/ Complementary Pair with 2SC1568 • 4# ^ / F e a t u r r e s

2sc1567

Abstract: 2SA0794 2SA0794A 2SC1567A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Complementary to 2SA0794, 2SA0794A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SC1565

Abstract: 2SA795
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA795 DESCRIPTION •Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 APPLICATIONS

2sc1567

Abstract: 2SA0794 2SA0794A 2SA794 2SA794A 2SC1567A
Contextual Info: Power Transistors 2SA0794, 2SA0794A 2SA794, 2SA794A Silicon PNP epitaxial planar type Unit: mm For low-frequency output driver Complementary to 2SC1567 and 2SC1567A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1

Contextual Info: 2SC1565 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)250m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)