2SC15 Search Results

2SC1501

Contextual Info: Inchange Semiconductor Product Specification 2SC1501 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High breakdown voltage ·Large power dissipation APPLICATIONS ·For medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter

2SC1568

Abstract: 2SA900
Contextual Info: Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING

2sc1567

Abstract: 2SA794 2SA794A 2SC1567A
Contextual Info: 2SC1567, 2SC1567A Power Transistors 2SC1567, 2SC1567A Silicon NPN Epitaxial Planar Type Package Dimensions AF High Power Driver Complementary Pair with 2SA794, 2SA794A • Features • High collector-em itter voltage V ceo • Optimum for the driver of 40~100W AF output

2sc1567

Abstract: 2SA794 High-Power NPN Silicon Power Transistor 2SC1567A 2SA7
Contextual Info: Inchange Semiconductor Product Specification 2SC1567 2SC1567A Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SA794/794A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency high power driver applications

2SA794

Abstract: 2SC156 2sc1567 low saturation pnp 40w transistor 2SA794A
Contextual Info: Inchange Semiconductor Product Specification 2SA794 2SA794A Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1567/1567A ·High collector-emitter voltage VCEO APPLICATIONS ·For low frequency output driver ·Optimum for the driver stage of low

204S60

Abstract: 2SC1568 2SA900 2SC15
Contextual Info: Power T ransistors 2SC15Ó8 2SC1568 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Am plifier for Low Voltage Supply Com plem entary Pair with 2SA900 • Features • Low collector-emitter saturation voltage VcEcsa» • High performance at low supply voltage

2SA794

Abstract: 2sc1567 2SA794A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION •With TO-126 package ·Complement to type 2SC1567/1567A ·High collector-emitter voltage VCEO APPLICATIONS ·For low frequency output driver ·Optimum for the driver stage of low

2SA909

Abstract: 2SA908 2sa907 2SC1584
Contextual Info: SavantIC Semiconductor Product Specification 2SA907/908/909 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC1584/1585/1586 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SC1586

Abstract: 2SA909
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA909 DESCRIPTION •High Power Dissipation: PC= 150W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) ·Complement to Type 2SC1586 APPLICATIONS ·Designed for amplifier and general purpose applications.

2SA900

Abstract: 2SC1568
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ~5t DE | ciDc17ESD 0 D 0 7 4 4 Ö 56L 0 7 4 4 8 CDIS C R E T E / O P T O 0 7^ jy- / 3 2SC1576 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS REGULATOR APPLICATIONS. U n i t in nun HIGH VOLTAGE SWITCHING APPLICATIONS.

2sc1589

Abstract: 2SC1502 2SC1583 2SC1575 2SC1508 2sc1589 equivalent 2SC1598 2SC1528 2SC1588 2SC1591
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SC1501 (V) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* VCE Ic (ºC) (MHz) (V) (mA) (mA) (mW) 300 5 100 2SC1503 50 3A 2SC1504 400 6 2SC1505 300 7 200 2SC1506 300 7 200

2SC1681

Abstract: 2sc1971 2SC2990 2SC1165 2SC1843 2SC1763 2SC1764 2SC2363 2SD1486 2SC1740LN
Contextual Info: - 118m % T y p e No. * 2SC 1571 * 2SC 1571L tt « Manuf. = ì¥ SANYO 2SC1570 = n 2SC1570 2SC 1573 & T 2SC4218 2SC 1573A & T 2SC4218 * 2SC 1572 * 2SC 15 74 * 2SC 1577 * 2SC 1578 M 2 TOSHIBA 2SC 1681 m b NEC 2SC 1843 B 3L HITACHI 2SC 1775 m ± ii FUJITSU □

2SC4081

Contextual Info: MCC TM Micro Commercial Components 2SC4081-A 2SC4081-B 2SC4081-C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x Low Cob . Cob=2.0pF Typ. Complementary to 2SC1576A x Case Material: Molded Plastic. UL Flammability

2SC1515

Abstract: Hitachi DSA002754
Contextual Info: 2SC1515 K Silicon NPN Triple Diffused Application High voltage switching Outline 2SC1515 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCES 200 V VCEO 150 V Emitter to base voltage

Contextual Info: 2SC1561 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)55 I(C) Max. (A)500m Absolute Max. Power Diss. (W)7.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2SC1567 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.65 h(FE) Max. Current gain.330

Contextual Info: 2SC1520 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)200m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC1588 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.7 Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Complementary to 2SA0794, 2SA0794A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features • High collector-emitter voltage (Base open) VCEO

2SC1645

Abstract: 2SC1545 c1645 C1546 C1646 C1545 1000J 2SC1546 2SC1646 2S01646
Contextual Info: P h y s ic a l Dim ension li f ê ^ Â ^ f ê (Absolute (T a = Maximum 25"C) Ratings) s II S 3 b C 2SC1545,2SC1645 2SC1546,2SC1646 2S C1545,2S C1645 = IL ^ 7 S '-i= 'y S 'm E 2SC1546,2SC1646 i = -y S1- ^ —^ m i± Ä E=1 VCBO V CES V ebo • 6 V V i mA

2SC1585

Contextual Info: Inchange Semiconductor Product Specification 2SC1585 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING see Fig.2

2SC1514

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1514 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in high frequency high voltage amplifier