LOW NOISE TRANSISTORS FOR MICROWAVE Search Results

SOT143 L03

Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power

Contextual Info: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com

Contextual Info: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Contextual Info: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

MRFC572

Abstract: MRF572 MRF671 vk200* FERROXCUBE MRF571
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF571 MRF572 MRFC572 The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, w ide dynamic range front end am­ plifiers, low noise VCO's, and microwave power multipliers. • Low Noise • High Gain

Contextual Info: BFR92ALT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-3.0dB@500MHz  Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

HP346A

Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

yg 2025

Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

vk200* FERROXCUBE

Abstract: MRF571
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors . designed for low-noise, wide dynamic range front end amplifiers, low-noise V C O ’s, and microwave power multipliers. • Low Noise • High Gain fT = 8.0 GHZ @ 50 mA

Contextual Info: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features • Designed for Battery Operation • f T to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages and

26-13 transistor sot-23

Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
Contextual Info: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages

MA4T636533

Abstract: transistor sot-23 2613 MA4T6365
Contextual Info: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

power 22E

Abstract: micro-x micro-x mhz ghz microwave MPSIG001 S21E S22E
Contextual Info: M-Pulse Microwave Low OperatingVoltage, High fT SiGe Microwave Transistors Features • Designed for Battery Operation • fT to 14 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic Packaging and Die Available • Can be Screened to JANTX, JANTXV Equivalent Levels

MP4T6365

Abstract: Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23
Contextual Info: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable

MA4T636500

Abstract: MA4T6365
Contextual Info: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

NTE2402

Contextual Info: NTE2402 NPN & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These transistors feature low intermodulation distortion and high power gain. Due to very high transition frequency, these devices also have excellent wideband properties and low noise up to high frequencies.

W1A sot23 transistor

Abstract: ci LA 7804 ON w1a SOT-23 wl 1281 W02 SOT23 w1a, sot-23 ST 11791 EN 13557 yg 2025 W1A SOT23
Contextual Info: HEW LETT 1 "KM P A C K A R D 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applica­ tions in the VHF through microwave frequency range.

TRANSISTOR C815

Abstract: equivalent transistor C5001 ATF-58143 AV02-0913EN ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S
Contextual Info: ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the ­active device. Low cost field ­effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure 0.6

PNP 2GHz LNA

Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630
Contextual Info: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

equivalent transistor C5001

Abstract: C5001 transistor c815 transistor transistor c815 ATF581433 ATF-58143 transistor C633 ATF58143 LL1005-FH2N2S TRANSISTORS BJT list
Contextual Info: Agilent ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures

transistor C715

Abstract: ATF-531P8 ATF531 AN-1222 ATF531P83 ATF-54143 BCV62C fet curtice mesfet fet
Contextual Info: ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high

transistor ajw

Abstract: ATF55143 Curtice AN-1222 ATF-54143 ATF-55143 ATF-551M4 ATF-5X143 55143
Contextual Info: ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high