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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2W01L (LN57) GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency: PO = 4.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN57 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems Type number : Cathode mark Red • Features • High-power output, high-efficiency : PQ = 4.5 mW (typ.) • Light emitting spectrum suited for silicon photodetectors
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LN57
Abstract: LNA2W01L
Contextual Info: Infrared Light Emitting Diodes LNA2W01L LN57 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Type number : Cathode mark (Red) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 0.5±0.1 Features High-power output, high-efficiency : PO = 4.5 mW (typ.)
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Contextual Info: Panasonic Infrared Light Emitting Diodes LN57 G aAs Infrared Light Em itting Diode Unit : mm For optical control systems Type number : Cathode mark Red • Features • High-power output, high-efficiency : PQ = 4.5 mW (typ.) • Light emitting spectrum suited for silicon photodetectors
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Infrared Emitting Diode
Abstract: LN57
Contextual Info: Panasonic Infrared Light Emitting Diodes LN57 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Type number : Cathode mark Red • Features • High-power output, high-efficiency : PQ = 4.5 mW (typ.) • Light emitting spectrum suited for silicon photodetectors
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LN57
Abstract: LN58 fl37
Contextual Info: PANASONIC INDL/ELEKÍSEÍIIJ 7EC D | t,T3Efi54 6932852 PANASONIC INDLtELECTRONIC 7 f? h lU C 7 h D - ^ 0 ^ 1 W X □ □ □ ‘iñBL. 72C 0 9 8 3 Ó ñ J~ _ _ D _ _ LN5 7 T-Hi-ll LN57 GaAs -f K /G a A s Infrared Light Emitting Diode
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Contextual Info: Infrared Light Emitting Diodes LNA2W01L LN57 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm Type number : cathode mark (Red) • Features 10.0 min. 0.5±0.1 (φ1.8) Rating 0.4±0.1 (0.15) R0.9 (0.7) (1.8) 2.2±0.15 2.8±0.2 2.8±0.2
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Contextual Info: MIL-S-19500/46fl ER AMENDMENT 2 AMENDMENT 1 29 March1972 MILITARYSPECIFICATION SEMICONDUCTOR DEVICE DIODE,GALLIUMARSENIDE, MIXER TYPES1N5764,1N5764M,lN5764fviR I Thisamendment formsa partof MILITARYSPECIFICATION MIL-S-19500/460(ER), dated19 November1971,and is approvedby the U.S.ArmyElectronics
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mil-s-19500/46flmarch1972types1n57641n5764m+5ln5764fvirmil-s-19500/460dated19eligib111-a903
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ln393
Abstract: TAG 203 350 PS-120 C231A 2NS505 C230A bj100
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer lB15CL05 lB15Cl10 lB15CL20 lB15CL30 lB15CL40 lB40CL05 lB40CL10 lB40CL20 lB40CL30 lB40CL40 lN3300 lN3300A lN3301 2N490 GnrlElec/GE Texas Inslr Unilex 2N490A
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lb15cl05lb15cl10lb15cl20lb15cl30+13lb15cl40lb40cl05lb40cl10lb40cl20lb40cl30lb40cl40ln393tag 203 350ps-120c231a2ns505c230abj100
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L2683-01
Abstract: SE314 122dl 18AF tokin 473 5.5v SE306 SE307-C SE308 SE313 SE3161L
Contextual Info: - • it ¥ H it U tl £ Po min imW f t 14 tSL f t If Ik I f n = 25*0 (T„=25*C ) WS W f± ; t- 4^ # : f t I f Xp /iSIEiiS if- is. m I f Pi> m * T„pr (m A) min!mW'sr' (mA) ty p (V) m a x (V) (m A) ty p (nm) ty p (deg) (m A) (m W ) rc ) - - 0.2 10 1.1
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se306se307-cse308se313+10typ25se314l-154se3161ll-155l-137l2683-01122dl18aftokin 473 5.5v
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LNC703PS
Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ
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ln124wp5f02-1psf02-1ln155+10ln184ln189lpr002-1pr002-2lnc703psln9p01sp50024lna4401pr0022ln68
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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n12861n13801mn1381n13811+15n13821n15040215p0802n150412mn15151mn152121transistor a2160transistor a1270a1270 transistortransistor 2sd 45151431t transistortransistor a769mini circuits 15542a1270 yan 5606k
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
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LT3SA
Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40
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OLD232
Abstract: OLD122 OLD222 TLR215A 122dl 18AF 1kl3 OLD223 OLD123 OLD124
Contextual Info: -2 2 1 'ä • 'Jt M £ n 1 t tH tr r, Kt Po min 'mW: ¡m A 1 OLD122 3.4 100 OLD123 2.4 100 OLD124 2.0 60 OLD125 1.0 OLD127 0.3 öt1 14 Hfl & s 'T „ = 2 o c > 17^, - 25 C ! «L Q-'- V m if- t- m n Xp d\ I f Pi> mW1 St iffi ffi n T„Pr i.mA! ty p V
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SLR-981A
Abstract: SLR-932A SLR-938C GL360 l30 tf 125 SLR981A SLR-889C SLR-935A 122dl L146
Contextual Info: 223- - * m. & % i. iti t l m •± n Po I f IE I f { r „ = 2 5 ic X „ = 25°C) ft m n t 5* m . ne ui V * I f Xr m gf] 1T- m I f Po 1% 51- m 1S m in 1mW) (m A ) min(mW'sr) (m A ) t y p (V ) (m A ) t y p (n m ) (m A ) (m W ) CC) S L R -9 3 2 A t y p 7 .5
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SIH-55SB3F
Abstract: SIR-56SB3 122dl L-117 L-119 LN155 LN175 LN189L LN57 LN58
Contextual Info: 229- - n. % • ± s; £ LN 58 tt & i t ¿fe t¡ £ T & w 14 m « r± * m n m & is. m mWM. ft Xp 0 2 I F Pd T„pr m a x V ty p (n m ) t y p fd e g ) (ra A ) im W ) rc > 1 .5 50 950 ±35 50 75 - L -1 1 6 - 1 .5 50 950 ±18 50 75 - L -1 1 7 I f im A ' 1 .8
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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ln393
Abstract: 2SF102B E0102FB cw12b 2N691 SFOR1B42 2N685AS
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer lB15CL05 lB15Cl10 lB15CL20 lB15CL30 lB15CL40 lB40CL05 lB40CL10 lB40CL20 lB40CL30 lB40CL40 lN3300 lN3300A lN3301 2N490 GnrlElec/GE Texas Inslr Unilex 2N490A
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EE-L104HB
Abstract: EE-L105X DN304 AN303 CN306 CN504 122dl 18AF DN305 AN111
Contextual Info: - 1£ Sk h it J -H è ¡II 3? im A 50 typ 4 50 ty p 8 50 ty p 5 50 1 .3 1.5 ty p 10 50 ty p 5 50 1.45 1.8 min imWï typ 8 a n u í C N lll I h 1+ \ ty p V) ( Ta = 25°C) CTfl = 25-C) # im A ) I f 7. ? ; i. - m 1e minimWsr: Po DN202 • it ¥ rife Ft; m a x IV)
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SE303 IR
Abstract: EE-L109 SE303 SE303A-C EE-L106 122dl TLN101A TLN102 TLN103A TLN104
Contextual Info: 226 - % % - it £ fi fr Tu uu /v £ &tj & 9 IX V fjg Ä j * j f . jg fg? Xp e \ I f Pd t y p n m t y p (d e g ) n> t y p (V ) m a x (V ) (m A ) (m W ) CC) 1 .2 1 .5 30 940 ± 50 - — 2 5 —85 L -7 0 E E -L 1 0 9 1 .2 1 .5 30 940 ±20 50 - —2 5 —85
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marking 2U diode t5
Abstract: diode hp 2800 hp 2800 diode diode hp 2835 schottky schottky diode marking A7 marking 2U diode C3 SOT23 HSMS2820 B7 SOT23 HSMS-2820
Contextual Info: rh p % H E W L E T T ftX fl PA CK A RD Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Package Lead Code Identification • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage A s Low as 0.34 V at 1 mA • Low FIT (Failure in Time)
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hsms-28xxot-23/sot143ot-23ot-143+10marking 2u diode t5diode hp 2800hp 2800 diodediode hp 2835 schottkyschottky diode marking a7marking 2u diodec3 sot23hsms2820b7 sot23hsms-2820
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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2SB667
Abstract: MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404
Contextual Info: Discontinued Types • Discontinued •m o s L S Is Type No. Alternative MN1001 Type No. Alternative Type No. — MN14T6 MN1418 — MN15621 MN110 MN1101 — MN1420 - — MN1421 - MN115 - MN1425 MN1427 - MN116 — MN1200 - MN1441 MN1201 — MN1202 - MN1204
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