LN58 Search Results

ic iR light control

Abstract: VF 100 PANASONIC pulse forward current
Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 G aAs Infrared Light Em itting Diode For optical control systems • Features « H igh-pow er output, high-efficiency : P Q = 3.5 m W typ. « Light em itting spectrum suited for silicon photodetectors t Infrared light em ission close to m onochrom atic light :

human detection infrared circuit

Abstract: diode 104 Frequency Control Products infrared temperature measure PO 102 traffic light control LN58
Contextual Info: Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 2.9±0.25 3.9±0.3 2.4 (1.5) 2.8 12.8 min. Rating Unit VR 3 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature Topr −25 to +85

Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 G aAs Infrared Light Emitting Diode For optical control systems • Features « H ig h -p o w e r output, h ig h -efficien cy : P Q = 3.5 m W typ. « L ig h t em ittin g spectrum suited fo r silicon p h o to d ete cto rs

Contextual Info: Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 2.9±0.25 3.9±0.3 2.4 (1.5) 2.8 12.8 min. Rating Unit VR 3 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature Topr −25 to +85

lN5819

Abstract: N5818 lN5818 n5817 ln5817 N5819 N5819M 1N589 melf Schottky glass
Contextual Info: lN5817, lN5817M; lN5818, lN5818M; lN5819, lN5819M High Current Schottky Barrier Rectifiers Nominal current IA Features: - Metal on silicon rectifier - Epitaxial construction Protection by a PN junction guard ring High current capability Low forward voltage drop

LN58

Contextual Info: Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 2.9±0.25 1.2 4.5±0.3 1.7±0.2 0.8 2.8 Emitted light spectrum suited for silicon photodetectors 2.4 1.5 3.9±0.3 Features High-power output, high-efficiency : PO = 3.5 mW typ.

AP 1100 R1

Abstract: LN58
Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 3.5 mW (typ.)

PO 102

Abstract: LN58
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 3.5 mW (typ.)  Emitted light spectrum suited for silicon photodetectors

overheating

Abstract: LN58
Contextual Info: Electromagnetic ballasts Type: LN58.742 230V/50HZ Item number: 169784 Standard version Vacuum-impregnated with polyester resin Lamp type: Output [W]: Voltage [V]: Shape [mm*mm]: Stack length [mm]: Fixing centre [mm]: Overall length [mm]: Protection from overheating:

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 2.9±0.25 3.9±0.3 (2.4) (1.5) 2.8 12.8 min. Rating Unit VR 3 V IF 50 mA IFP 1 A Power dissipation

infrared diode

Abstract: Infrared Emitting Diode Infrared light Emitting Diode LN58
Contextual Info: Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 2.9±0.25 1.2 4.5±0.3 1.7±0.2 0.8 2.8 Emitted light spectrum suited for silicon photodetectors 2.4 1.5 3.9±0.3 Features High-power output, high-efficiency : PO = 3.5 mW typ.

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

L2683-01

Abstract: SE314 122dl 18AF tokin 473 5.5v SE306 SE307-C SE308 SE313 SE3161L
Contextual Info: - • it ¥ H it U tl £ Po min imW f t 14 tSL f t If Ik I f n = 25*0 (T„=25*C ) WS W f± ; t- 4^ # : f t I f Xp /iSIEiiS if- is. m I f Pi> m * T„pr (m A) min!mW'sr' (mA) ty p (V) m a x (V) (m A) ty p (nm) ty p (deg) (m A) (m W ) rc ) - - 0.2 10 1.1

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

PHOTO TRANSISTOR 940nm to-18

Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Contextual Info: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,

LNC703PS

Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

LT3SA

Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40

LN9705

Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1

OLD232

Abstract: OLD122 OLD222 TLR215A 122dl 18AF 1kl3 OLD223 OLD123 OLD124
Contextual Info: -2 2 1 'ä • 'Jt M £ n 1 t tH tr r, Kt Po min 'mW: ¡m A 1 OLD122 3.4 100 OLD123 2.4 100 OLD124 2.0 60 OLD125 1.0 OLD127 0.3 öt1 14 Hfl & s 'T „ = 2 o c > 17^, - 25 C ! «L Q-'- V m if- t- m n Xp d\ I f Pi> mW1 St iffi ffi n T„Pr i.mA! ty p V

SLR-981A

Abstract: SLR-932A SLR-938C GL360 l30 tf 125 SLR981A SLR-889C SLR-935A 122dl L146
Contextual Info: 223- - * m. & % i. iti t l m •± n Po I f IE I f { r „ = 2 5 ic X „ = 25°C) ft m n t 5* m . ne ui V * I f Xr m gf] 1T- m I f Po 1% 51- m 1S m in 1mW) (m A ) min(mW'sr) (m A ) t y p (V ) (m A ) t y p (n m ) (m A ) (m W ) CC) S L R -9 3 2 A t y p 7 .5

SIH-55SB3F

Abstract: SIR-56SB3 122dl L-117 L-119 LN155 LN175 LN189L LN57 LN58
Contextual Info: 229- - n. % • ± s; £ LN 58 tt & i t ¿fe t¡ £ T & w 14 m « r± * m n m & is. m mWM. ft Xp 0 2 I F Pd T„pr m a x V ty p (n m ) t y p fd e g ) (ra A ) im W ) rc > 1 .5 50 950 ±35 50 75 - L -1 1 6 - 1 .5 50 950 ±18 50 75 - L -1 1 7 I f im A ' 1 .8

panasonic inverter dv 707 manual

Abstract: al 12 fc battery drill charger panasonic inverter manual dv 707 cd 1619 CP fm radio Sharp amplifier SM 30 panasonic inverter dv 707 panasonic parameter inverter dv 707 manual LM 358 battery charger schematic 12v 10A lithium ion car battery charger wiring diagram 220v ac to 5V dc power supply using 7805 regulato
Contextual Info: PRACTICAL DESIGN TECHNIQUES FOR POWER AND THERMAL MANAGEMENT BOOST V IN O ^ SWITCH V|N +7V TO +24V +5V @ 1A A D P3050-5 BIAS ON FB GND COMP 22|xF 4 k il 1nF 100|xF * V|N anyCAP LDO TOPOLOGY C COMP NONINVERTING W IDEBAND DRIVER Rl 3415 American Drive Mississauga, Ontario,LAV TT4