LIFETIME Search Results

720-LWG6SPCBEA5K8L1Z

Abstract: OHL02778
Contextual Info: 2011-05-12 Advanced Power TOPLED Datasheet LW G6SP released Advanced Power TOPLED features a compact package with a wide brightness range and high luminous efficiency. It completes the high-power product line with an outstanding lifetime of up to 50,000 hours.

SSSB

Abstract: SSSS919800 T162 30N50N
Contextual Info: Slide Switch 5 H mm, 2mm-travel Type SSSS9 Series Mid-size general purpose type well established for user friendliness. Typical Specifications Detector Items Specifications Rating（max.）/（min.）（Resistive load） 0.1A 12V DC/1mA 5V DC Contact resistance（Initial performance/After lifetime）

APT54GA60B

Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

APT36GA60B

Abstract: APT36GA60S MIC4452 c 1853
Contextual Info: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Alphasense

Abstract: carbon monoxide sensor gas sensor no2 so2 sensor datasheet
Contextual Info: α S CO-AF Carbon Mono xide Sensor Monoxide PATENT PENDING Technical Specification Figure 1 CO-AF Schematic Diagram All dimensions in millimetres ± 0.1mm Top View Bottom View Side View Table 1 CO-AF Specification PERFORMANCE * Sensitivity LIFETIME * Response time

APT28GA60BD15

Abstract: APT6017LLL MIC4452
Contextual Info: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Alphasense

Abstract: NO2-B1 no2 sensor so2 sensor datasheet gas sensor no2 SO2-BF nitrogen dioxide sensor
Contextual Info: α S NO2-B1 Nitrogen Dioxide Sensor PATENT PENDING Technical Specification Figure 1 NO2-B1 Schematic Diagram All dimensions in millimetres ± 0.1mm Top View Bottom View Side View Table 1 NO2-B1 Specification PERFORMANCE * Sensitivity LIFETIME * Response time

APT28GA60K

Abstract: MIC4452
Contextual Info: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

UMX4900

Abstract: UMX4000 UM4906 UM4000 UM4001 UM4002 UM4006 UM4010 UM4900 UM4900C
Contextual Info: www.MICROSEMI.com UM4000 / UM4900 HIGH POWER PIN DIODES RoHS Compliant Versions Available DESCRIPTION KEY FEATURES ABSOLUTE MAXIMUM RATINGS AT 25º C UNLESS OTHERWISE SPECIFIED Package Condition UM4000 D • Carrier lifetime greater than 5 µs • Non cavity design

SD15

Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
Contextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT

APT68GA60B

Abstract: APT68GA60S MIC4452
Contextual Info: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Alphasense CO-BF

Abstract: carbon monoxide sensor gas sensor CO-bf Alphasense so2 sensor datasheet NDS specification 20000 co gas gas sensor no2 CO-BF
Contextual Info: α S CO-BF Carbon Monoxide Sensor PATENT PENDING Technical Specification Figure 1 CO-BF Schematic Diagram All dimensions in millimetres ± 0.1mm Top View Bottom View Side View Table 1 CO-BF Specification PERFORMANCE * Sensitivity LIFETIME * Response time

G200

Abstract: f 0952
Contextual Info: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

K2404

Contextual Info: H-IIF Series • Heavy metal Platinum: Pt introduced for lifetime control • Higher-speed diode built-in • High breakdown tolerance (high dv/dt) H H: High-Voltage Power MOSFET II: Series (Generation) F: FRD (Fast Recovery Diode) built-in H-IIF Series Built-in Diode trr and Breakdown Tolerance

JJ SMD diode

Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W
Contextual Info: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package

DW01-P

Contextual Info: DW01+ One Cell Lithium-ion/Polymer Battery Protection IC General Description Ordering Information The DW01+ battery protection IC is designed to protect lithium-ion/polymer battery from damage or degrading the lifetime due to overcharge, overdischarge, and/or overcurrent for one-cell

Contextual Info: GRUNDAUFBAU BASIC DESIGN Kenndaten / Characteristic data: Tastpunktabstand: Keypoint distance: Kontaktmaterial: Contact material: Prägung: Embossing: Betätigungskraft: Actuation force: Betätigungsweg: Actuation travel: Mindestlebensdauer: Lifetime min.:

membrane key

Contextual Info: GRUNDAUFBAU BASIC DESIGN Kenndaten / Characteristic data: Tastpunktabstand: Keypoint distance: Kontaktmaterial: Contact material: Prägung: Embossing: Betätigungskraft: Actuation force: Betätigungsweg: Actuation travel: Mindestlebensdauer: Lifetime min.:

silver ink

Contextual Info: GRUNDAUFBAU BASIC DESIGN Kenndaten / Characteristic data: Tastpunktabstand: Keypoint distance: Kontaktmaterial: Contact material: Betätigungskraft: Actuation force: Betätigungsweg: Actuation travel: Mindestlebensdauer: Lifetime min.: Max. Schaltspannung:

DW01

Abstract: dw01 sot-23-6
Contextual Info: DW01+ One Cell Lithium-ion/Polymer Battery Protection IC General Description Ordering Information The DW01+ battery protection IC is designed to protect lithium-ion/polymer battery from damage or degrading the lifetime due to overcharge, overdischarge, and/or overcurrent for one-cell

103AT

Abstract: 30-PIN bq20z90 bq20z90DBT bq20z90DBTR BQ20Z90DBT-V150 BQ20Z90DBT-V150G4 bq29330 SLUA364 gas discharge Display theory
Contextual Info: bq20z90 www.ti.com SLUS778 – JULY 2007 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29330 FEATURES 1 • 2 • • • • • • • • • • • • • • • 2 Lifetime Data Logging 30-Pin TSSOP DBT

KME AXIAL CAPACITORS

Abstract: kme series capacitors KME50T101M8X16LL KME Series xl 1507 KME50VB22RM5X11LL kme63t471m12x30ll KME50T4R7M5X12LL KME63T4R7M5X12LL KME16T471M8X20LL
Contextual Info: KME Series UNITED CHEMI-CON • Miniature ■ General Purpose ■ Solvent Proof ■ +105°C Maximum Temperature The KME series capacitors are our standard general purpose capacitors offered with radial or axial lead terminals for selected voltage and capacitance ranges. These capacitors have a rated lifetime of

LX400

Contextual Info: LXA/LX Series UNITED CHEMI-CON • Large Can ■ Screw Terminal ■ Long Life ■ High CV ■ High Ripple Current Ratings ■ +105°C Maximum Temperature The LXA/LX series capacitors are computer grade capacitors designed for a very long lifetime. These capacitors have a rated lifetime of 5,000 hours at 105°C with the rated ripple current applied. The

panasonic ge series capacitors

Abstract: panasonic capacitors series ks
Contextual Info: Panasonic Aluminum E JsctoJytic C apacitois/K S A lm iium E fectiDÿti: C apaciDis Radial Le ad Type Japan Malaysia KS (Bi-polar) Type A (Radial Leads) style 04/JIS C 5141 Series: Bi-polar Ultra Miniature • Features • • Lifetime: 85 °C 1000 h 5 mm height