APT36GA60SD15 Search Results
APT36GA60SD15 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT36GA60SD15 |
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Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36; | Original | 243.65KB | 9 |
APT36GA60SD15 Price and Stock
Microchip Technology Inc APT36GA60SD15IGBT PT MOS 8 Combi 600 V 36 A TO-268, TO-268, Projected EOL: 2028-11-26 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT36GA60SD15 | Tube | 20 Weeks |
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APT36GA60SD15 | 4,380 |
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APT36GA60SD15 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SD15
Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
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Original |
apt36ga60bd15apt36ga60sd15sd15apt36ga60b+5 | |
439JContextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT |
Original |
apt36ga60bd15apt36ga60sd15439j | |
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Contextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT |
Original |
apt36ga60bd15apt36ga60sd15 |