LH534700D Search Results

lh5s4

Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
Contextual Info: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T

lh5s4

Abstract: lh5348 LH5s lh5s47xx 48-TSOP LH53H4100D LH53H4100N lh534y00d 48TSOP sharp mask rom
Contextual Info: NEW PRODUCT INFORMATION SHARP LH53 H4100 • Description High-speed 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

LH231G

Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Contextual Info: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200

sop03

Abstract: 32DIP 32-PIN LH534700D LH534700 DIP032-P-0600
Contextual Info: LH534700 CMOS 4M 512K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 524,288 words × 8 bit organization The LH534700 is a 4M-bit mask-programmable ROM organized as 524,288 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.)

lh5348

Abstract: lh5s4 48TSO
Contextual Info: ü fi LH53V4R00 LH53V4R00-2 • Description ■ Pin Connect for T h e L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U ser's N o . : L H 5V 4R X X is a CM OS 4 M -b it m ask-program m able ROM 32-pin SOP organized as 524 288 X 8 bits. It provides a high-speed access time o f 120/150 ns with low

lh5348

Abstract: TSOP032-P-0820 lh5s4 flash memory sop 32-pin lh5348xx lh5s47xx
Contextual Info: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Description Pin Connection T he L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U s e r's N o. : LH5V4RXX is a CM O S 4M -bit m ask-program m able ROM

lh5s4

Abstract: lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH53V4R00N LH5H41XX TSOP032-P-0820
Contextual Info: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Description Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Pin Connection The L H 53V 4R 00N /T , L H 53V 4 R 0 0 N /T -2 U ser’s N o. : LH5V4RXX is a CMOS 4M -bit mask-programmable ROM 32-pin SOP

LQ070T5BG01

Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Contextual Info: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66

Contextual Info: CMOS 4M 512K x 8 MROM FEATURES DESCRIPTION • 524,288 words x 8 bit organization The LH534700 is a4 M -b it mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.)

Contextual Info: CMOS 4M 512K x 8 MROM FEATURES DESCRIPTION • 524,288 words x 8 bit organization The LH534700 is a 4M-bit mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

8a4l

Abstract: Q26Z
Contextual Info: LH534700 DESCRIPTION FEATURES • 524,288 words CMOS 4M 512K x 8 Mask-Programmable ROM x 8 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 (iW (MAX.) • Static operation • TTL compatible I/O

sharp mask rom

Abstract: cd rom 40 pinout lh5348 lh5s4 LH5S
Contextual Info: NEW PRODUCT INFORMATION SHARP LH53H4000 • Description The LH53H4000D/N User's No. : LH5H40XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be selected by BYTE input pin. ■ Features

lh5348

Abstract: lh5s4 lh5348xx sharp mask rom LH534A00T LH5s LH534B00T 40-DIP
Contextual Info: NEW PRODUCT INFORMATION SHARP LH53H4100 • High-speed 4M-bit Mask-Programmable ROM ■ Description Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.

lh5s4

Abstract: lh5348 40-DIP LH53H4000D LH53H4000N 48TSOP 40-pin EPROM pinout sharp mask rom LH534B00T
Contextual Info: NEW PRODUCT INFORMATION S H A R P LH53H4000 • Description ■ The LH53H4000D/N User's No. : LH5H40XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be selected by BYTE input pin.