LG IC 621 Search Results

Contextual Info: GMM7324200ANS/SG-6/7/8 LG Semicon Co.,Ltd. Description Features The G M M 7324200A N S /S G is a 4M x 32 bits D ynam ic R A M M O D U L E w hich is assem bled 8 pieces o f 4M x 4bits D R A M s in 24/26 pin SO J package on both sides the printed circuit board

2SC16

Contextual Info: 2 S C 1 6 2 1 , 2 S C 1 621 R High Speed Switching NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS • High speed switching: t on=12ns TYP., t,tg= 7.0ns TYP., to ff = 18ns TYP. in m illim eters inchest 2 5 -g 1 • Low collector saturation voltage: V cE (satl = 0.13V TYP.

IN916

Abstract: MM3736 MM3737
Contextual Info: Mil/13736, MM3737 NPN SILICON ANNULAR SILICON MEMORY DRIVER NPN SILICON MEMORY DRIVER TRANSISTOR . . . designed for 1 Am pere, high-speed switching applications such as ferrite core memory and hammer drivers. • Collector-Em itter Breakdown Voltage —

2SA1621

Abstract: 2SC4210 A1621
Contextual Info: 2SA1621 TO SH IBA 2 S A 1 621 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS + 0.5 • • High hpE • hpE = 100~320 Complementary to 2SC4210 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

LG 631 TV LG

Abstract: 5N5OUT Tv tuner Diagram LG RF tuner LG lg innotek tuner LG 631 IC fm radio pcb LG Innotek tv lg LG 631
Contextual Info: LG Innotek Multi Media Tuner NTSC M/N JPN & FM Radio 2004/03/08 Preliminary specification TAPE-H091F 1 LG Innotek Preliminary specification Multi Media Tuner NTSC M/N(JPN) & FM Radio TAPE-H091F FEATURES Systems NTSC M/N(JPN) & FM Radio Stereo True 5V device (low power dissipation)

LT 3401

Abstract: lts3401
Contextual Info: LITEM Î I LTS-3400L SERIES 0.8" SINGLE DIGIT NUMERIC LED DISPLAYS FEATURES • 0 .8 IN C H 2 0 32 m m D IG IT H E IG H T • C O N T IN U O U S U N IF O R M S E G M E N T S • C H O IC E OF F IV E B R IG H T C O L O R S -R E D /B R IG H T R E D /G R E E N /Y E L L O W /O R A N G E

7472 ci

Abstract: IC 4407 2SC5091 ic 1496 specifications
Contextual Info: TOSHIBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= 7dB f=lG H z Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

1RF620

Contextual Info: • 4302571 0054013 HARRIS lib ■ HAS IR F 620/6 21/6 2 2/6 2 3 IRF62 OR/621R /622R /623R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.0A and 5.0A, 150V - 200V T O P VIE W • fDS on = O.Bii and 1.20 • Single Pulse Avalanche Energy Rated*

MPS6513

Abstract: LG IC 621 MPS65 MPS6514 MPS6515 MPS6517 MPS6519 6515 transistor 5bti T2721
Contextual Info: MPS6513 MPS6514 MPS65Ì5_ PHILIPS 7 1 1 0 ô 2 t 0 0 4 2 4 ^ 0 323 « P H I N INTERNATIONAL AMPLIFIER TRANSISTOR T - 2 7 - Z / General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DA TA MPS6513

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

U430

Contextual Info: SSMA C O N N E C T O R S HERMETICALLY SEALED SPARK PLUG g e n e r a l d e s ig n s p e c if ic a t io n s Interface Dimensions: VSWR, maximum: Frequency Range: Insertion Loss, dB maximum: Nominal Impedance; Voltage Rating, maximum VRMS: RF Leakage, dB minimum:

BSR40

Abstract: BSR41 BSR42 BSR43
Contextual Info: N AMER PHILIPS/DISCRETE OLE D bbS3T31 QD1ST72 M I BSR40 to 43 T " 2 S '- / 5 " SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.

PH13002

Abstract: transistor 13002 13002 npn H 13003 13002 tr 13002 PH13003
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • bbSBTBl G D I T I M I I ,I 3 ■ PH13002 PH13003 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-126 envelope, intended for use in switching regulators, inverters, motor control, solenoid/relay drivers and deflection circuits.

f9414

Abstract: fairchild 1P F9414-4
Contextual Info: F9414 4-Chip Data Encryption Set FAIRCHILD A S chlum berger C om pany M ic ro p ro c e s s o r P ro d u ct Description The F a irc h ild F9414 4-C hip D a ta E n c ry p tio n S et c o n s is ts o f fo u r s im ila r 40-pin P L- LSI d e v ic e s the 9414-1,

BF989

Abstract: SS MARKING CODE mosfet marking code gg
Contextual Info: 71 1 0 0 2 b OübfibTb fc,b2 H P H I N BF989 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in u.h.f. applications in television

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of

PCB 99 94v-0

Contextual Info: Part Details for P/N: 2-382408-3 Page 1 o f 2 f AU JLII f J â f l P [ENGLISH] FRANÇAIS PH' RETl/Jtll T ffiP. SHOPPING CO ART1I Cliiiiitetfc | DEUTSCH j ITALIA NO HMfiOL | B ^ f f I 4 ^ ^ Y2K - OK Contact your Sales Engineer or call AMP Customer Service at 1-800-522-6752 for production quantity orders. Click for

23824093

Contextual Info: Part Details for P/N: 2-382409-3 _ ' A H I 3 [ENGLISH] ! FRANÇAIS Page 1 o f 2 C eiiîîtatt | DEUTSCH | ITALIANO j ESMflOL | B ^ II ^ I Y2K - OK 2 -3 8 2 4 0 9 -3 — l o f i products Active W «J S153SSEI IC Sockets DIP Sockets Please use Customer Drawing or CAD file for design activity; line art and other

TIP117

Abstract: TIP115
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRAN SISTO R TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ V c e = -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP110/111/112

IRF 4310

Abstract: ir 4310 IRF621R
Contextual Info: J2 H A R R IS IR F 620/621/6 2 2 /6 2 3 IR F620R /621R /622R /623R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B TOP VIEW • 4.0A and 5.0A, 1S0V - 200V • •-D S o n = 0 . 8 0 a n d 1 . 2 f l DRAIN (FLANGE)

ku 602 vc

Abstract: opa 2143
Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N OPA621 AVAILABLE IN DIE Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 2.3nV/ /fiz • LOW NOISE PREAMPLIFIER • LOW DIFFERENTIAL GAIN/PHASE ERROR

information applikation mikroelektronik

Abstract: information applikation C520D mikroelektronik Heft mikroelektronik Heft 12 VQB71 Mikroelektronik Information Applikation VQE23 applikation heft Applikation Information
Contextual Info: m O N in s ie la t K Information Applikation t a n a r il* INFORMATION APPLIKATION MIKROELEKTRONIK Heft 14: C 520 D 3-Digit-Analog/Digital-Wandler <?> veb H alb le ite rw e rk franlcfurt o d e r lejtb etrieb im veb kombinat mikroelektronik K A M M E R DER T E C H N I K