LG 83A Search Results

f6654

Abstract: STR-F6654 c828 STR F6654 c829 C3198Y FB801 ic803 IC904 C817
Contextual Info: LG CHASSIS: MC-83A R812 /1\ B. 2M/0. 5W RC CS li iOOOP 4KV A A * C q n /d f f > CB12 iOOOP

NE76083A

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • HERMETIC METAL/CERAMIC PACKAGE • ION IMPLANTATION 24 21 3.5 Noise Figure, NF dB • LG = 0.3 µm, WG = 280 µm 4 Ga 3 18 2.5 15 2 12 9

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76083A NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V , I d s = 1 0 mA LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz Lg = 0.3 [im, Wg = 280 \im HERMETIC METAL/CERAMIC PACKAGE

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76083A NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V , I d s = 1 0 mA LOW NOISE FIGURE NF= 1.6 d B T Y P a tf = 12GHz HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz 24 21 Lg = 0.3 |xm, Wg = 280 |im

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

DIODE marking EG 83A

Contextual Info: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient

Contextual Info: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient

vsb06p

Abstract: VSB06P05LCI lg 83a
Contextual Info: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient

GR-1089

Abstract: RS-423 VSB06P05LCI abd marking code
Contextual Info: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

1400

Abstract: NE202 circuit NE202 NE20200 NE20248 NE20283A NE202XX W2603
Contextual Info: NEC/ CALIFORNIA 1SE D bM2741M OGOIS^G T-31-¿S' 5 - N E i* i» ULTRA LOW NOISE K-BAND HETERO JUNCTION FET FEATURES NE202 SERIES OUTLINE DIMENSIONS • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4)

NE32000

Abstract: NE32084 NE32083A
Contextual Info: E C/ C A L I F O R N I A NEC 1SE D b42?m4 OQOlbOS r - 3 / - 2 S' 3 NE32000 NE32083A NE32084 LOW COST/LOW NOISE K-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES NE32000 CHIP • LOW NOISE FIGURE 1.2 dB TYP at f = 12 GHz (NE32083A) 1.3 dB TYP at f = 12 GHz (NE32084)

ED 83A

Contextual Info: B B A A A B B B A B A B A A B C A B B A CC A A B A A B A A A B B C C AA A C B A C B A A AB C B Glenair IPT SE Series Available Insert Arrangements BB B B B A D B B A D C 3 Contacts B C BB BB B C B B C A BBC A A DA B D A D A D CCAA C A A D C CA A C A E B A

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

xo 405 mf

Abstract: HTRO 0.1 x transistor a928 st cpcap A928 MT 6235 A928 transistor XC56311GC150 BR A928 DSP56311
Contextual Info: MOTOROLA Order Number: DSP56311/D Rev. 0, 2/2000 Semiconductor Products Sector Advance Information DSP56311 24-BIT DIGITAL SIGNAL PROCESSOR The Motorola DSP56311, a member of the DSP56300 family of programmable digital signal processors DSPs , supports wireless infrastructure applications with general filtering operations. The on-chip enhanced

NE76083A

Abstract: lg 83a
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION DESCRIPTION 21

1402C transistor

Abstract: 2000W High Power Supply Unit L2000 switching 2000w DSL200 Single phase power factor correction 2000w RMS power 2000W Power Supply 48v power supply artesyn transistor 1402c
Contextual Info: L2000 SERIES Single output • • • • • • • • The L series is a range of single output, high current power supplies ideally suited to a broad range of applications. Robust performance and field proven reliability are hallmarks of this series. Field reliability in excess of 100,000 hours has been

Contextual Info: DATA SHEET G a As MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E DIM EN SIO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • 1,88±0.3

TC2260

Abstract: KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters
Contextual Info: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E D IM E N S IO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain

NEC D2217

Abstract: D1647 D1426 TRANSISTOR D1546 d2422 transistor d1647 d1426 transistor D1427 D1664 transistor d1065
Contextual Info: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • PACKAGE DIMENSIONS Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) 1.88±0.3 High associated gain

Contextual Info: A B A B IPT SE Series Bayonet Lock Connectors B A B B B A B A A B A B C A B B A CC A A B A A B A A A B B C C BB B A 3 Contacts B C BB BB B C B B C A BBC A A DA B D A D A D CCAA C A A D C CA A C A E C B B C C C A AD CA CC BBC B DC D BB C B A D A C C A B C C C AA

NE202

Abstract: NE20300 NE20383A
Contextual Info: E C/ C A L I F O R N I A NEC 1SE D b4E7414 ODOISTT 1 NE20300 NE20383A ULTRA LOW NOISE Ku-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES • L O W N O IS E F IG U R E 1.25 d B T Y P at f = 12 G H z NE20300 CHIP (Units in pm) • H IG H A S S O C IA T E D GAIN

NE76084

Abstract: NE760 NE76000 NE76083A S221 y427
Contextual Info: N E C / CALIFORNIA 1SE D NEC □4S7414 G D O l t m LOW NOISE Ku-K BAND G aAs MESFET 7 - r - 3 h 4 S NE760 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz The NE76000 provides a low noise figure and high associated

NE202 circuit

Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
Contextual Info: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)