LG 57A Search Results

LG 57A

Contextual Info: A dvanced P o w er Te c h n o l o g y APT40M70LVR 400V 57A 0.070« ' POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

LG 57A

Abstract: 378r
Contextual Info: A dvanced P o w er T e c h n o l o g yr Q D APT60M90JN 600V 57A 0.0900 "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT40M70LVR ADVANCED W jA P o w e r T e c h n o lo g y o.o7on 57a 4 oov POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

LG 57A

Abstract: APT60M
Contextual Info: 'W w/T O D ADVANCED P ow er Te c h n o l o g y ' APT60M90JN 600V 57A 0.090ft $ Û " U L Recognized" File No. E145592 S ISO TO P* POWER MOS IV( SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V All Ratings: T c

KTY 88

Abstract: KTY 20-6 Q62902-B152-F222 Q62902-B156-F222 Q62703-N0191 Q62902-B155 Q62702-P1088 Q62702P946 Q62703-N209 Q62902-B155-F222
Contextual Info: Alphanumerische Bestellnummern Q-Nummem Alphanumeric Ordering Codes (Q numbers) Achtung: Neue Typenbezeichnung bei Si-Fotodedektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer Ordering code

Contextual Info: A dvanced P ow er Te c h n o lo g y APT60M90JN 600V 57A 0.090Í2 S Û "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV* SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

FP 310

Abstract: Q62902-B155-F222 Siemens LS 3369-fh irl 3034 SCF 5784 KTY 11-5 KTY 20-5 KTY 14-6 Q68000-A7820 LG 57A
Contextual Info: Alphanumerisches Typenverzeichnis Alphanumeric Type Index Achtung: Neue Typenbezeichnung bei Si-Fotodedektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Typ Type Bestellnummer Ordering code 4N25 4N26

diode 57

Abstract: 090Q BFC17
Contextual Info: lili itti lili SEME BFC17 LAB 4TH GENERATION MOSFET S O T -2 2 7 Package Outline. Dimensions in mm inches 1 1 8 (0 463 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 600V 57A I D(cont) ^DS(on) Terminal 1 Terminal 3 Source* Gate Terminal 2 Terminal 4

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BDX45

Abstract: BDX47 BDX42 BDX43 BDX44 BDX46
Contextual Info: BDX45 BDX46 BDX47 P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a TO-126 plastic envelope w ith collector connected

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

Contextual Info: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA Product Preview MCM6726 128K x 8 Bit Fast Static Random Access Memory W J PACKAGE 4 0 0 -M IL S O J C A S E 8 57A The MCM6726 is a 1,048,576 bit static random access memory organized as 131,072 x 8 bits. This device is fabricated using high-performance silicon-gate

LG 57A

Contextual Info: APT40M70LVR • R A dvanced W .\A p o w e r Te c h n o lo g y " 400v 57 a 0 .070q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: P D 9 .1650 International I ö r Rectifier FA57SA50LC HEXFET Power MOSFET • • • • • • • • • Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Gate Charge Device

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

LTS23305

Abstract: HP 5082-7653 LTD-585G CSS-517Y LTD482RC CSM-57442E HDSP-3403 MAN3920A LTS-4540-AG tdso 5160 k
Contextual Info: Cross Reference For detailed comparison, please always refer to m anufacture r's specs Manufacturer Part Number CSC P/N A B C HP 50 82 -761 0 CSS-3126-11 X X X HP 5 0 8 2-7 6 1 1 CSS-31 2E 1 1 X X X D j 0.30 F" C f ’t ‘ G " C p N •- 0 .3 0 r~ 'i j N

IRFPO44

Abstract: IRFP045 IRFP044 diode sy 171 C466 irfpu44 C463 T-39 LG 57A RNC 90
Contextual Info: HE D I 4ÛSS4S2 aGdâ71E Data Sheet No. PD-9.583A 5 | INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER X R REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE IRFPÜ44 IRFPQ45 HEXFET TRANSISTORS N-CHANNEL 60 Volt, 0.028 Ohm HEXFET TO-247AC TO-3P Plastic Package

Contextual Info: TILI 56, TIL157A OPTOCOUPLERS 02492, SEPTEMBER 1978-REVISED JUNE 1989 UL LISTED - FILE #E 6 5 0 8 5 • GaAs-Diode Light Source Optically Coupled to a Silicon N-P-N Darlington-Connected Phototransistor • High Direct-Current Transfer Ratio . . . 300% Minimum at 10 mA

C557B

Abstract: C556B C558B c557 C556 C558 BC556A bc557b LG 57A BC556
Contextual Info: BC556,A,B BC557,A,B,C BC558B M AXIM UM RATINGS S ym b o l BC556 BC557 BC558 C o lle c to r -E m itte r V o lta g e R ating v CEO -6 5 -4 5 - 30 U n it Vdc C o lle c to r-B a s e V o lta g e v CBO -8 0 - 50 - 30 Vdc E m itte r-B a s e V o lta g e Ve b o -5 .0

IPC-D-275 Design standard for Rigid Printed Boards and Rigid Printed Board Assemblies

Contextual Info: Terminal Blocks BLOCKS Innovative Engineering Solutions Contents Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 BARRIER STYLE TERMINAL BLOCKS ] Single Row SE/SEI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

LEAPER-3

Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Contextual Info: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.

14 pin relay

Abstract: 11 pin relay Socket IEC 947-7-1 2.5 mm terminal block 10 pin relay IEC 947-7-1 terminal block 400v IEC 947-7-1 terminal block TB521 68000-10 IEC 947-7-1 400v 14 pin relay socket
Contextual Info: Curtis TERMINAL BLOCKS Curtis We Build Confidence! Filtered Power Entry RFI Filters Custom Filters Curtis Family of Products Terminal Blocks Terminal Blocks DIN Rail Liquid Level Controllers PCB Mount Blocks Custom Terminal Blocks Curtis Industries A Div. of Powers Holdings, Inc.