APT60M Search Results

Contextual Info: APT60M75JFLL 600V POWER MOS 7 R 58A FREDFET 0.075Ω S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

fast diode SOT-227

Abstract: C5198
Contextual Info: APT60M75JFLL 600V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

Contextual Info: APT60M60JFLL 600V 70A 0.060Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

400V 70A power mosfet

Contextual Info: APT60M60JLL 800V 70A 0.060Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

DIODE 248

Contextual Info: APT60M75JVR 62A 0.075Ω 600V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

605A

Contextual Info: APT60M75PVR 600V 60.5A 0.075Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

l 7251

Abstract: l 7251 3.1
Contextual Info: APT60M80JVR 600V 55A 0.080Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT60M75JVFR 600V Ω 62A 0.075Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT60M75JVFR

Contextual Info: APT60M75JVFR 600V Ω 0.075Ω 62A POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT55M90BFN

Abstract: APT60M90BFN PD10
Contextual Info: ADVANCFD POWER TECHN^0L0^6Y 4 CIE IÂVP □ 257^ 0^ 00005*10 117 1> ADVANCED OD 4 'T -S fl-is PO W ER Tec h n o lo g y APT60M90BFN 600V 63.0A 0.090 APT55M90BFN 550V 63.0A 0.090 OS<4)* a POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFElTS

Contextual Info: APT60M75PVR W 600V 60.5A 0.075W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

h48 diode SPECIFICATIONS

Abstract: DIODE 248
Contextual Info: • R ADVANCED r M po w er Tec h n o lo g y APT60M75JVR 6oov 62a 0.075Q POWER MOS V P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®

Contextual Info: ADVANCFD POWER TECHNOLOGY 4TE 0257101 D 0 0 0 0 5 *1 0 ADVANCED P o w er t s a - is Te c h n o lo g y QD 4 - OS(4) IAVP 117 - APT60M90BFN 600V 63.0A 0.090 i APT55M90BFN 550V 63.0A 0.090 1a7 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFElfS

AL 1450 DV

Contextual Info: APT60M80L2VR 600V 65A 0.080W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT60M75L2LL 600V 73A 0.075Ω POWER MOS 7 R MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT60M75JLL 600V 58A 0.075W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: APT60M75JVFR 600V Ω 62A 0.075Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

power mosfet 600v 29a

Contextual Info: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT60M75L2LL

Abstract: 0236f
Contextual Info: APT60M75L2LL 600V 73A 0.075Ω POWER MOS 7 R MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT60M75JVR A dvanced P o w er Te c h n o l o g y 600V 62A 0.075Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: A dvanced P ow er Te c h n o lo g y APT60M90JN 600V 57A 0.090Í2 S Û "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV* SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

LG 57A

Abstract: 378r
Contextual Info: A dvanced P o w er T e c h n o l o g yr Q D APT60M90JN 600V 57A 0.0900 "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.