LFEA Search Results

Contextual Info: RQ3E130MN Nch 30V 13A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.1mW RDS(on) at 4.5V (Max.) 11.6mW ID 13A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

2sc3906k

Contextual Info: 2SC4102 / 2SC3906K Datasheet NPN 50mA 120V High Voltage Amplifier transistors lOutline Parameter Value VCEO IC 120V 50mA UMT3 SMT3 Collector Collector Base Base Emitter Emitter 2SC4102 SOT-323 SC-70 lFeatures 1) High Breakdown Voltage (VCEO=120V). 2SC3906K

Contextual Info: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: SCS230AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A/30A* QC 23nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible

Contextual Info: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: 2SAR544P / 2SAR544D Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P / 2SCR544D

Contextual Info: SMLK1 / SMLK2 series PSML2 Data Sheet lFeatures lOutline • High heat radiation "PSML2" series • Low package by flat frame structure • High Luminous Intensity lSize 1006 0402 4520 (1808) 4.5x2.0mm (t=0.6mm) 1.0×0.6mm (t=0.2mm) Color Type WB lDimensions

Contextual Info: RCD060N25 Nch 250V 6A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 530mW ID 6A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

Contextual Info: RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Small Mold Package (HSMT8).

2SCR514p

Contextual Info: 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A MPT3 Base Collector Emitter 2SAR514P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514P 3) Low VCE(sat)

Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

Contextual Info: R6030ENZ Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

2SCR514R

Contextual Info: 2SAR514R Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A TSMT3 Collector Base Emitter 2SAR514R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)

Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825

RS1e240

Contextual Info: RS1E240GN Nch 30V 24A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 3.3mW RDS(on) at 4.5V (Max.) 4.4mW ID 24A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

C5001 transistor

Abstract: transistor C5001 2SC5001 transistor marking C5001
Contextual Info: 2SC5001 Datasheet NPN 10A 20V Middle Power Transistor lOutline Parameter Value VCEO IC 20V 10A Collector CPT3 Base Emitter 2SC5001 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low VCE(sat) VCE(sat)= 0.25V(Max.)

C5103

Abstract: transistor C5103 C5103 Transistor
Contextual Info: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)

Contextual Info: SiC Power Module Datasheet BSM120D12P2C005 lApplication lCircuit diagram  Moter drive 1  Inverter, Converter  Photovoltaics, wind power generation. 10 9 8 N.C  Induction heating equipment. 3,4 5 6 7(N.C) lFeatures 2 1) Low surge, low switching loss.

Contextual Info: Schottky Barrier Diode RB228NS100 Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) Switching power supply RB2281 NS100 lFeatures 1 1) Cathode common dual type 2) Low IR LPDS 3) High reliability 4) AEC-Q101 qualified lConstruction

R6020ENX

Contextual Info: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: Schottky Barrier Diode RBQ30NS65A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ30NS 65A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar