LF SOT23 Search Results

BA231

Abstract: RF diodes BA423L BA480 DIODE ED 34 BA423
Contextual Info: 47 RF/Microwave Devices RF Diodes cont. Schottky-Barrier Diodes Primarily intended for mixing applications. Type Package Outline Vr (mV) BA480 BA481 DO-34 DO-34 280 450 @ lF (mA) (ft) 1 1 15 13 *s @ ed (pF) and f I? (mA) (kHz) 1 1 5 5 Vr max V R max lF (V)

ZC2800E

Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

zc825

Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

FMMV105G

Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br a t I r - 1 0 jA min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC 2800E ‘ ZC 2810E ZC 2811E ZC 5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

s0103

Abstract: BAT42 equivalent BAT43 equivalent S0103C
Contextual Info: Schottky Diodes Silicon Schottky Barrier Diodes DO-35 Glass Package, MiniMELF Glass Package, SOD123 Plastic Package, SOT23 Plastic Package Type Peak Inv. Voltage PIV Power Dissipation at 25 °C Junction Temp. Forward Voltage Drop VF at lF Volts Reverse Current

BAS70-05

Contextual Info: R.F. T R A N S IS T O R S A N D DIODES TABLE 8: SOT-23 DUAL SCHO TTKY BARRIER DIODES V b r at Type iR = 1 0 m A Min. Volts BA S70-04 BAS70-05 BAS 70-06 70 70 70 V F at CTatVR = 0V lF at V F= 1 V f = 1MHz Mark­ lF = 1mA •r Max. ImV) Max. nA at Vn (volts) Min. (mA)

transistors

Abstract: bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent bc337 hie bc338 equivalent bc327 equivalent BC547 sot23
Contextual Info: Application Applikation Bipolar Transistors Bipolartransistoren Nomenclature: Benennung: B – Silicon Transistor C – LF Low Power Transistor nnn – Serial Number X or -nn – hFE Group B – Siliziumtransistor C – NF Kleinleistungstransistor nnn – Serien-Nummer

BA482

Abstract: BA483 BA484 BA792 BA423AL
Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Tuner transistors & diodes RF & MICROWAVE SEMICONDUCTORS & MODULES SCHOTTKY-BARRIER DIODES AM BAND-SWITCHING DIODES cd @ V r and type number rD @ lF and f max £ì (mA) (MHz) max (pF)

Contextual Info: BAV74 Circuit For Measuring Switching Time lF=10mA 0.2|xF Trr1 Pulse is supplied by a generator with the following characteristics: Output is monitored on a sampling oscilloscope with the following characteristics: Output impedance = 50iJ Input impedance = 5012

BAV105

Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30

BAT543

Abstract: BAT744 BAS70-07
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes SCHOTTKY-BARRIER DIODES OVERVIEW surface-mount VR lF trr leaded max. max. max. DO-34 V (mA) (ns) 4 30 - BA481 4 30 - - 4 30 - -

BA792

Abstract: BA482 BA484 DO-34 BA423AL BA582
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Tuner transistors & diodes SCHOTTKY-BARRIER DIODES AM BAND-SWITCHING DIODES type number BA423A BA423AL rD lF and f max mA (MHz) (Ö) 1.2 10 1 1.2

36 V INPUT LOW-DROPOUT LINEAR REGULATOR

Abstract: AMC8877 AMC8878 MAX8878
Contextual Info: AMC DOC. #:AMC8878_A LF Jun 2004 AMC8877 ADD MICROTECH CORP. LOW NOISE 300mA LOW DROPOUT REGULATOR DESCRIPTION FEATURES Low output noise: 30µVRMS Industry standard’2982 pin assignment (AMC8877) Output voltage precision of ±1.4% accuracy Very low dropout voltage: 50mV/50mA,

8879

Abstract: Microtech AMC8878 AMC8879 MAX8878 ab50 regulator
Contextual Info: AMC DOC. #:AMC8878_D LF March 2004  AMC8878/8879 ADD MICROTECH CORP. LOW NOISE 150mA LOW DROPOUT REGULATOR DESCRIPTION FEATURES Low output noise: 30µVRMS Industry standard’2982 pin assignment (AMC8878) Output voltage precision of ±1.4% accuracy Very low dropout voltage: 50mV/50mA and

marking L2

Contextual Info: SST502 Series Vishay Siliconix Current Regulator Diodes— P o v m in 45 V SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST511 TO-236 (SOT-23) > PRODUCT SUMMARY Part Number Typ lF (mA) Part Number tvp if Marking (mA) Marking S ST502 0.43

diode G21

Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

"Philips Semiconductors" BAX DO-35

Abstract: B2V86-2V0 b2v86 BZV87-3V24 ba315 BA220
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes LOW-VOLTAGE STABISTORS OVERVIEW VF typ. V 1 mA 5 mA at lF: Vr V RRM ' frm 10 mA max. max. max. sF typ. rdiH max. (V) (V) (mA) (mV/K)

S3C marking

Contextual Info: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.

Contextual Info: LF to 2.5 GHz TruPwr Detector AD8361 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAMS Calibrated rms response Excellent temperature stability Up to 30 dB input range at 2.5 GHz 700 mV rms, 10 dBm, re 50 Ω maximum input ±0.25 dB linear response up to 2.5 GHz

Contextual Info: LL4448 Small Signal Diodes FEATURES M iniM ELF ♦ Silicon Epitaxial Planar Diode ♦ Fast sw itching diode in M iniM E LF case especially suited for autom atic insertion. « This diode is also available in other case styles including: the DO-35 case with the type

AD8361

Abstract: ca3080 attenuator ca3080 AD8361ART-REEL7 AD8361-EVAL AD8361ARM AD8361ARM-REEL AD8361ARM-REEL7 AD8361ART-EVAL AD8361ART-REEL
Contextual Info: a LF to 2.5 GHz TruPwr Detector AD8361 FEATURES Calibrated RMS Response Excellent Temperature Stability Up to 30 dB Input Range at 2.5 GHz 700 mV rms, 10 dBm re 50 ⍀ Maximum Input ؎0.25 dB Linear Response Up to 2.5 GHz Single Supply Operation: 2.7 V to 5.5 V

MO178AA

Abstract: MO178AB JEDEC to 243 MO-137 MO-187 TSOT23 SOT23W-3 JEDEC MO-187 ba
Contextual Info: PACKAGE OUTLINES PLASTIC QUARTER-SIZED SMALL OUTLINE PACKAGE QSOP 24 leads Package Designator LF 8.74 .344 8.55 .337 8º 0º 24 0.25 .010 0.19 .007 3.99 .157 3.81 .150 6.20 .244 5.79 .228 A 1 1.27 .050 0.40 .016 2 0.254 .010 REF 24X SEATING PLANE GAUGE PLANE

AD8361

Abstract: AD8361ARM AD8361ARM-REEL AD8361ARM-REEL7 AD8361ART-EVAL AD8361ART-REEL AD8361ART-REEL7 AD8361-EVAL AD8361 circuit AD8306
Contextual Info: a LF to 2.5 GHz TruPwr Detector AD8361 FEATURES Calibrated RMS Response Excellent Temperature Stability Up to 30 dB Input Range at 2.5 GHz 700 mV rms, 10 dBm re 50 ⍀ Maximum Input ؎0.25 dB Linear Response Up to 2.5 GHz Single Supply Operation: 2.7 V to 5.5 V

diode Lz 66

Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith