LEM LA 55 P Search Results

current transducer la 55-tp

Contextual Info: Current Transducer LA 55-TP IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16016 Electrical data IPN IP RM Primary nominal r.m.s. current

ADSP-1016JD

Abstract: MPY16HJ d64a f64a trw 1016 ADSP-1016JX mpy-16hj1 ADSP-1016SD trw mpy 16 MPY-16HJ
Contextual Info: ANALOG DEVICES □ FEATURES 16 x 16 Parallel Array M u ltip lier 150m W m ax P ow er Dissipation w ith CMOS Technology 145ns M u ltip ly Tim e Im proved M PY-16HJ Second Source T w o's C om plem ent, Unsigned M a gnitud e or M ixed M o d e M ultiplication

Contextual Info: W D A T E ADC-304 I IN N O V A TIO N a n d E X C E L L E N C E 8~BÌt, 20MHZ, LOW"POW6r Flash A/D Converters FEATURES • • • • • • • 8-bit resolution 20MHz conversion rate ±1/2LSB maximum nonlinearlty 8MHz input bandwidth Low power consumption, 375mW

Contextual Info: PALCE22V10 COM'L: H-5/7/10/15/25,0-10/15/25 IND: H-10/15/20/25 PALCE22V10Z COM'L:-25 IND: -15/25 BEYOND PERFO RM A N CE PALCE22V10 and PALCE22V10Z Families 24-Pin EE CMOS Zero Power Versatile PAL Device DISTINCTIVE CHARACTERISTICS ♦ As fast as 5-ns propagation delay and 142.8 MHz fMAX (external)

Contextual Info: C3 WF4M16-XDTX5 M/HITE /MICROELECTRONICS 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • A ccess Tim e of 9 0 , 1 2 0 , 150ns ■ Packaging: • 56 Lead, H e rm e tic Ceram ic, 0.520" CSOP Package 213 . ■ D ata P olling and Toggle Bit fe a tu re fo r d e te ctio n of program

ad376

Contextual Info: ANALOG DEVICES □ FEATURES Com plete 16-Bit Converter W ith Reference and Clock ±0.003% M axim um Nonlinearity No Missing Codes to 14 Bits Over Tem perature Fast Conversion - 15|ts 14 Bit Short Cycle Capability Parallel Outputs Low Power: HOOm'W Typical

philips ceramic capacitors

Abstract: ic 358s T500K99COGW8570 358S 859S-100Z Philips ceramic Miniature Ceramic Plate Capacitors philips n3300 PA06-A "3.58S"
Contextual Info: Ceramic Capacitors Miniature Plate Capacitors, Class 1 100V Rated OC voltage U* Twbb. Coefficient TCU9*/KI Cap. IdF PtOO +100 0.47 0.56 0.68 0.82 1.0 1.2 1.5 1.8 2.2 2.7 33 39 4.7 5.6 6.8 8.2 10 12 15 18 22 Z1 33 39 47 56 68 82 100 120 150 188 220 270 330

TDC1009J

Abstract: TDC1009 TDC-1009J adsp1009td ADSP-1009 adsp-1009kd ADSP-1009JD ADSP-1009JX ADSP-1009KX ADSP-1009SX
Contextual Info: ANALOG DEVICES 12x12-Bit CMOS Multiplier/Accumulator ADSP-1009 FEATURES 12 x 12-Bit Parallel M ultiplication/A ccum ulation 150m W P ow er Dissipation w ith C M O S Technology 130ns M ultiply/A ccum ulate Tim e Im proved TDC1009J Second Source A vailable in 64-Pin Ceram ic DIPs, or 68-Term inal

MC14007B

Abstract: cd4007 application motorola CD4007 CD4007 cd4007 motorola HTL LOGIC
Contextual Info: g M O T O R O LA S e m ic o n d u c t o r s B O X 2 0 9 1 2 • P H O E N IX . A R IZ O N A MC14007B 8S036 D U A L CO M PLEM EN TA RY PAIR PLUS IN V E R T E R McMOS S S I T h e M C 1 4 0 0 7 B m u lti-p u rp o s e device consists o f th re e N -chan nel

TDC1010

Abstract: "multiplier accumulator" TSX-11 16x16 multiplier tsl-3 IDT7210 ma7010 Marconi radiation hard
Contextual Info: MA7010 Marconi Electronic Devices D. + . u. .on ^ a r . ^ A ccum u|ator Signal S lic e T M APPLICATIO NS FEATU RES • Radiation Hard To 1 MRad (Si) • Fast Fourier transform processing • H igh SEU im m unity, Latch-up free • Array processing • Silicon-on-Sapphire technology

Contextual Info: LITEM £I SEMICONDUCTORS KBPC15 KBPC KBPC-W T 442 m 23 T 432 11097), o 'MAX> 25.4) _L ' 1.2 M IN. 130.5) Jfc_ 0.04 {1.0) D IA T Y p U H O lS FOR NO. B SCREW 193 <4.9) 0 1 A FEATURES • Rating to 1000V PRV • 300 amperes surge cap ability f i l i l i

4d32

Abstract: class AB2 push pull power amplifier RK-4D32 RK4D32 RK-4D22-RK-4D32 tube push pull audio amplifier Circuit class B push pull power amplifier RK4D22 "RF Power Amplifier" class B push pull audio amplifier
Contextual Info: TECHNICAL INFORMATION RAYTHEON TYPE 11. je u x . T h e R aytheon R K 4 D 3 2 and R K 4 D 2 2 tu b es a re b e a n ty p e a lig n e d g rid pow er a m p lifie r s . E ach has a u n ip o te n tid o x id e -c o a t e d c ath o d e , a herd g la s s n o nex bu lb , a id a g la s s b a s e w ith short tun gsten

Contextual Info: REFERENCE DATA. K V 14 6 0 S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2. T O K O PART NUMBER 3. APPLICATIONS 4. STR UCT URE 5. PACKAGE OUTL I NE 6. PIN LAYOUT 7. PACKAGE O UTL I NE D I M E N S I O N S / SIGNATURE Drawn By MARKING 8. A B S O L U T E MAXIMUM RATINGS

psri

Abstract: MN3860 MN3860H
Contextual Info: MN3860 y 12-Bit D/A CONVERTER with INPUT REGISTER mmm MICRO NETWORKS DESCRIPTION FEATURES « C o m p le te W ith In te rn a l: In p u l R e g is te r O u tp u t O p A m p L o w -D rifl R e fe re n c e • + 1 /2 L S B L in e a rity a n d M o n o to n ic ity

TDC1028

Contextual Info: TDC1028 Digital FIR Filter Building Blo ck , • Cascadable To > 3 6 Taps W ith o u t E xternal Com ponents 10M Hz • 4-Bit C o efficient A n d Signal D ata W o rd s The T D C 1 0 2 8 is a video-speed, T T L com patib le bit-slice building block for Finite Im pulse Response (FIR) digital

HD6309

Abstract: hitachi HD6309 HD63B09P HD6309e HD63C09P HD6809E HD6809 HMCS6800 HD63B09 HD63C09
Contextual Info: #U180 HD63B09, HD63C09 CMOS Microprocessing Unit MPU JANUARY, 1988 H IT A C H I Pin A rra n g e m e n t D escrip tion The H D 6309 is th e h ig h est 8 -b it m icro­ p rocessor of H M C S6800 family, w h ich is co m p atib le w ith th e co n v en tion al H D 6809.

CRYSTAL 20 mhZ

Abstract: Crystal oscillator 12 MHz 130Q 1N3600 604D PCK604S
Contextual Info: OM C HI P SEE D S YSTEMS bT' l OLi S? 0000M47 OCS SD2 PCK604 ^ 5 0 - 0 ^ 50 to 600 MHz Crystal Controlled Frequency Synthesizer OnChip Systems P R O D U C T H IG H L IG H T S 50 - 600 MHz ♦ F requency Range 50 to 6 0 0 MHz 12.5-18.75 MHz CRYSTAL ♦ Inexpensive In p u t C rystal 12.5 to

VEB mikroelektronik

Abstract: 4565 D A2005V KP303 KP303D U806D analoge schaltkreise a4100d A209K sf126d
Contextual Info: DATEN BUCH 0 /x *«» Der vorliegende T ite l ist ein w eite re r Band d er D aten­ buch-R eihe Uber die M ikroelektronik. B auelem ente Die A pplikationszentrum R eihe wird Elektronik des im Berlin VEB Kom binat A uftrag des und des VEB M ilitär­ verlages herausgegeben.

scr 12v battery charger

Abstract: proportional control circuit two Tone generator scr phase control battery charger scr variable frequency drive circuit diagram 2N2573 2N2573 SCR MC3424P 2N650 MC3524L
Contextual Info: SEMICONDUCTORS P.O. BOX 209Î2 • PHOENIX, ARIZONA 85036 MC3424, MC3424A MC3524, MC3524A MC3324, MC3324A Advance Information POWER SUPPLY SUPERVISORY C IR C U IT/ DUAL-VOLTAGE COMPARATOR The MC3424 series isa dual-channel supervisory circuit, consist­ ing of two uncommitted input comparators, a reference, output

Contextual Info: HM6117LFP-3, HM6117LFP-4 Preliminary 2 0 4 8 - w o rd x 8 - b it High S p e e d S t a t ic C M O S RAM • FEATURES High Density Small-sized Packaged Projection Area Reduced to One-Thirds of Conventional DIP Thickness Reduced to a Half of Conventional DIP

si91

Abstract: an-70 siliconix L75B2
Contextual Info: T em ic AN701 S e m i c o n d u c t o r s Designing High-Frequency DC-to-DC Converters with the SÌ9114A Switchmode Controller b y B ijan E. M ohandes Introduction [n 1987 S ilico n ix in tro d u ced the Si9IOO m o nolithic sw itch m o d e P W M c o n tro lle r and estab lish ed th e tren d fo r

Contextual Info: Am79467 Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Optimized for long loop operation ■ On-hook transmission ■ Programmable constant current feed ■ -24-V to -58-V battery operation ■ Programmable loop current detector

nsu6

Abstract: LC9948G "CCD SENSORS" pir sensor light dark sensor Sanyo CCD e purse FUJINON TV LENS ccd board ir cut filter driver
Contextual Info: Ordering number : EN*5216 CCD LC9948G ISAfÊYOl 1/5-Inch Optical Size CCIR B/W Solid-State lmácj€ Sensor Preliminary Overview Package Dimensions The LC 9948G is a I/5" optical size frame transfer type unit: mm C C D charge-coupled device solid-state image sensor

Contextual Info: PRELIMINARY 1,048,576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION T he T C 514410A P /A J/A SJ/A Z is the n e w g en e ra tio n dyn am ic R A M organized 1 ,0 4 8 ,5 7 6 words by 4 bits. T he T C 514410A P /A J/A SJ/A Z u tiliz es T O S H IB A ’S CM OS S ilico n gate process tech n ology as w e ll as