P760A
Contextual Info: 6MBI50F-120 50A IGBT IGBT MODULE •<* : Featu res •im *Q W ± • Low Saturation Voltage ( M O S ^ r — h f l liS ) •l i t « * « V o ltag e Drive Variety of Power Capacity Series : Applications • —$ ffl-f • AC, D C If —# • 7 Inverter for Motor Drive
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FMMT593
Abstract: FMMT493
Contextual Info: SOT23 NPN SILICON PIANAR MEDIUM FMMT493 POWER TRANSISTOR ISSUE 3- NOVEMBER COMPLEMENTARY PARTMARKING 1995 TYPE - E 1 1 493 I RATINGS. I SYMBOL ] PARAMETER Collector-Base ! FMMT593 DETAIL - ABSOLUTE MAXIMUM I SOT23 VALUE 1 UNIT Voltage Collector-Emitter Voltage
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fmmt493fmmt593tamw250c100mhz+510ima10tna10jma100ma10iia
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2N6714
Abstract: 2N6715 DSA0037489 DSA003748
Contextual Info: 2N6714 2N6715 — NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES vcE~ * 40 volt * Gain of 50 at Ic= 1 Amp * PTOt=1 Watt ABSOLUTE MAXIMUM PARAMETER SYMBOL — Collector-Base Voltage Collector-Emitter Emitter-Base ~ RATINGS. ‘CBO
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2n67142n6715le50madsa0037489+1dsa003748
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ss8550
Abstract: MPSL01 2N5401 MPSL51 SS8050 SS9011 transistor D 667 C TRANSISTOR 2n5401
Contextual Info: j S A M S U N G S E M I C O N D U C T O R INC MPSL01 14E D | 7 ^ 1 4 3 00073*10 â J 'T 'í '9 - X i NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emltt«rWiltafl«: Vdo=120V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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mpsl01625mwic-100/ss8550+62n5401mpsl51ss8050ss9011transistor d 667 ctransistor 2n5401
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