LD 1509 Search Results

LD247

Abstract: 471 0940 LD1101 ld1221r PVC-22KT-L/22KT-LD1
Contextual Info: LD Series Metalized Drum Core Power Inductor Applications • Buck or boost inductor • Noise filtering and output filter chokes • Computers • Power supplies • Test equipment instrumentation Environmental Data • Storage temperature: -40°C to +125°C

IRF610

Abstract: power MOSFET IRF610 33a marking
Contextual Info: International S Rectifier P D -9.3261 IRF610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 lD = 3.3A Description DATA SH EETS

1RF620

Abstract: 1RF620S 317H IRF620 RF620 SMD-220 smd diode marking 9 ba ISD25 ScansUX1015
Contextual Info: PD-9.317H International IiorIRectifier IRF620 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Vdss=200V R DS{on - 0 - 8 0 ^ lD = 5.2A Description DATA SHEETS

irfbf30

Abstract: Diode IOR 10 dc
Contextual Info: International S Rectifier PD-9.616A IRFBF30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 900V ^DS on = 3 -7 ^ lD = 3.6A Description DATA SHEETS

IRF710

Contextual Info: PD-9.327J International S Rectifier IRF710 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 400V ^D S on = 3 - 6 0 lD = 2.0A Description DATA SHEETS

IRF9630

Abstract: MOSFET IRF9630
Contextual Info: PD-9.352F International S S Rectifier IRF9630 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V = 0-80Q R DS on lD = -6.5A Description

USSR DIODE

Abstract: IRF730
Contextual Info: PD-9.308K International r]Rectifier IRF730 HEXFET® Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^ D S o n = 1 lD = 5 .5A Description D ATA

IRFBG30

Abstract: ior 481 mosfet PD962 IBC30 9620a 9620* diode
Contextual Info: PD-9.620A International S Rectifier IRFBG30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V R DS on = 5 -0 ß lD = 3.1 A Description DATA SHEETS

IRFZ24

Abstract: M150 rectifier
Contextual Info: PD-9.594A International iioR Rectifier IRFZ24 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements 60V ^DSS - ^DS on - 0.1 O il lD = 1 7 A Description DATA

315J

Abstract: IRF720 ScansUX1018
Contextual Info: PD-9.315J International i“r Rectifier IRF720 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = 400V ^DS on — 1 - 8 0 lD = 3.3A Description DATA

100-C

Abstract: IRFBG20 MOSFET 1000v 10a IRFBG20 TO-220
Contextual Info: PD-9.604A International S Rectifier IRFBG20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V R DS on = 11 ß lD = 1.4 A Description DATA SHEETS

1RF9640

Abstract: IRF9640 9422B 422B
Contextual Info: PD-9.422B International S Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V ^DS on = 0-50É2 lD = -1 1 A Description

IRF614

Abstract: circuit TOP 242 PN international rectifier irf614
Contextual Info: International S ] Rectifier PD-9.475B IRF614 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 2 0 i 2 lD = 2.7A Description DATA SHEETS

1RF640

Abstract: 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s IRF640 1D11A IRF640 smd IRF640 applications note
Contextual Info: PD-9.374G International â ü Rectifier IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V R DS on = 0 . 1 8 0 lD = 18A Description DATA

1RFZ14

Abstract: AN-994 IRFZ14 IRFZ14S SMD-220 GIJ rectifier smd marking 3xf GIJ diode
Contextual Info: PD-9.507B International »»Rectifier ÌRFZ14 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ D SS- 60V R D S on - 0 .2 0 0 , lD = 10A Description

smd diode WW1

Abstract: smd diode marking ww1 ww1 smd 1rfz46 smd ww1 14 SMD ww1 smd ww1 99 IRFZ46 AN-994 IRFZ46S
Contextual Info: PD-9.827 International Rectifier IRFZ46 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^d ss - 50 V ^DS on = 0 - 0 2 4 0 lD = 50* A Description DATA

1RF820

Abstract: GIJ diode IRF820 ScansUX1021 ScansUX102 RD1001
Contextual Info: International Ek ] Rectifier PD-9.3240 IRF820 HEXFET® Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 5 0 0 V R DS on = 3 -0 ß lD = 2 .5 A Description

DIODE marking 7BA

Abstract: IRF9540 IRF9540 mosfet IRF9540 application RD24A
Contextual Info: International S Rectifier PD-9.421C IRF9540 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d s s - -1 0 0 V ^DS on = 0 . 2 0 0 lD = -1 9 A

IRF820

Abstract: top 258 pn
Contextual Info: PD-9.3240 International S Rectifier IRF820 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 500V ^DS on = lD = 2.5A Description DATA SH EETS Third Generation HEXFETs from International Rectifier provide the designer

IRF624

Abstract: RG-185 9472
Contextual Info: PD-9.472B International S Rectifier IRF624 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 1 - 1 ^ lD = 4.4A Description Third Generation HEXFETs from International Rectifier provide the designer

pj 54 diode

Abstract: IRFBF20 pj 47 diode
Contextual Info: PD-9.607A International S Rectifier IRFBF20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 900V R DS on = lD = 1.7A Description DATA SH EETS Third Generation HEXFETs from International Rectifier provide the designer

1RFZ24

Abstract: smd WV1 smd diode marking 1Ss 6ct smd AN-994 IRFZ24 IRFZ24S SMD-220 smd diode WV1 smd WV1 15
Contextual Info: PD-9.594A International jgg Rectifier IRFZ24 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V p ss - 60 V R DS on = 0 .1 0 0 lD = 1 7 A Description

1RF740

Abstract: mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet
Contextual Info: PD-9.375H International lïsRi Rectifier IRF740 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^DS on = 0 - 5 5 0 lD = 10A Description Third Generation HEXFETs from international Rectifier provide the designer

Contextual Info: RoHS 2002/95/EC Ld LE]Dl PDLAR [TY PIN 13 PIN 14 CDLDR + YELLDW _l THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PR O PRIETA RY' TO BEL FUSE INC, AND SH ALL NOT BE CDPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPR O VAL OF B EL FUSE INC. D2 PDLAR ITY