9472 Search Results

9471LE, 9472LE

Abstract: 9472LE
Contextual Info: Adhesive Transfer Tapes with Adhesive 300LSE 8132LE • 8153LE • 9453LE • 9471LE • 9472LE 9653LE • 9671LE • 9672LE Technical Data Product Description Product Construction April, 2013 3M Adhesive Transfer Tapes with 3M™ Low Surface Energy Acrylic Adhesive

Contextual Info: PD-94723B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides

Contextual Info: PD - 94726H IRF6618/IRF6618TR1 HEXFET Power MOSFET RoHS compliant containing no lead or bromide Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible

IRF6608

Abstract: IRF6618 IRF6618TR1
Contextual Info: PD - 94727B IRF6608 l l l l l l l HEXFET Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile <0.7 mm Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques

NC 1350

Abstract: IRF6618 IRF6618TR1
Contextual Info: PD - 94726D IRF6618/IRF6618TR1 HEXFET Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount

Contextual Info: 2 ECN APP'D. BY DATE REV 1 /3 1 /0 6 A2 7461 JM 5 -4 -0 9 A3 8724 TRM 5 -2 2 -1 2 A4 9472 SMN NOTES: 1 - PLUG KIT CONSISTS OF : PRE—INSERTED PLUG HOUSING 2 - MATERIALS : FRONT HOUSING PLASTIC : POLYCARBONATE, UL 9 4 -V O , SMOKE CONTACTS : PHOSPHOR BRONZE, SELECTIVE GOLD PLATING

51a marking

Abstract: IRF1010EZS AN-994 IRF1010EZ IRF1010EZL
Contextual Info: PD - 94724B IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

2n7580

Abstract: IRHMS67160 2N7580T1
Contextual Info: PD-94723E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7580T1 IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides

DE-AC03-76SF00098

Abstract: Cu3Sn sncu0.7 Cu6Sn5 Ortec Cu6Sn5 formation whisker Cu base b110c
Contextual Info: Structure and Kinetics of Sn Whisker Growth on Pb-free Solder Finish *W. J. Choi, T. Y Lee, and K. N. Tu Dept. of Materials Science and Engineering, UCLA, Los Angeles, CA 90095-1595 N. Tamura, R. S. Celestre, and A. A. MacDowell Advanced Light Source, LBNL, Berkeley, CA 94720

IRF6618

Abstract: IRF6618TR1
Contextual Info: PD - 94726A IRF6618/IRF6618TR1 HEXFET Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount

stc crystal

Contextual Info: SYSTEMS CMOS 300 bps FSK MODEM |3 t> D v v P <5 r T l S STC 9471C/ STC 9472C DESCRIPTION FEATURES The STC 9471C and STC 9472C are m o n o lith ic CMOS m odem s w h ich provide the necessary m od­ u la tio n and d e m o d u la tio n to a llo w the tra n s ­

Contextual Info: PD - 94726G IRF6618/IRF6618TR1 HEXFET Power MOSFET RoHS compliant containing no lead or bromide Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible

DirectFET Isometric

Contextual Info: PD - 94726F IRF6618/IRF6618TR1 HEXFET Power MOSFET RoHS compliant containing no lead or bromide Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible

DE-AC03-76SF00098

Abstract: Cu3Sn Cu6Sn5 sncu0.7
Contextual Info: Structure and Kinetics of Sn Whisker Growth on Pb-free Solder Finish *W. J. Choi, T. Y Lee, and K. N. Tu Dept. of Materials Science and Engineering, UCLA, Los Angeles, CA 90095-1595 N. Tamura, R. S. Celestre, and A. A. MacDowell Advanced Light Source, LBNL, Berkeley, CA 94720

Contextual Info: PD - 94724C IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: PD - 94725 IRFR3704Z IRFU3704Z Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max

Contextual Info: PD - 94724 IRF1010EZ AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 60V RDS on = 8.5mΩ

intel 8748

Abstract: vexta CMS1000 CMS1000I cms capacitor int 6400
Contextual Info: CMS FREQUENCY TO DIGITAL CONVERTER custom micro systems, inc. box 9472 livonia mi 48151 5 lo <=r_ CMS1000, CMS1000I PRODUCT DESCRIPTION FEATURES T h e C M S 1 0 0 0 is a s in g le ch ip s o lu tio n to th e p ro b lem o f m a kin g in s ta n ta n e o u s , high a c c u ra c y

IRF6608TR1

Abstract: IRF6608 IRF6618 IRF6618TR1 24v transformer 9472
Contextual Info: PD - 94727A IRF6608/IRF6608TR1 HEXFET Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount

IRL7NJ3802

Contextual Info: PD - 94721 IRL7NJ3802 12V, N-CHANNEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 Product Summary Part Number IRL7NJ3802 RDS(on) BVDSS 12V 0.0085 ID 22A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRFR4104

Abstract: IRFU4104
Contextual Info: PD - 94728 IRFR4104 IRFU4104 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 5.5mΩ

mosfet 4800

Abstract: IRF Power MOSFET code marking IRF MOSFET driver 4800 mosfet IRF P CHANNEL MOSFET IRF N-Channel Power MOSFETs MOSFET 20V 100A irf p channel 4800 so-8 IRF gate driver
Contextual Info: PD - 94726C IRF6618/IRF6618TR1 HEXFET Power MOSFET l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount

AN-994

Abstract: IRF1010EZ IRF1010EZL IRF1010EZS 9472
Contextual Info: PD - 94724C IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRHMS63160

Abstract: IRHMS67160
Contextual Info: PD-94723A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides