2n7580
Abstract: IRHMS67160 2N7580T1
Contextual Info: PD-94723E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7580T1 IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
|
Original
|
pd-94723eo-254aairhms67160irhms63160+42n7580t190mev/mil-prf-195002n7580
|
PDF
|
|
Contextual Info: PD-94723E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7580T1 IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
|
Original
|
pd-94723eo-254aa2n7580t1irhms67160+3irhms6316090mev/mil-prf-19500
|
PDF
|
2N7586
Abstract: IRHMS67260 marking code mEV 2n7584 2N7486
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2013. MIL-PRF-19500/753B 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
|
Original
|
mil-prf-19500/753bmil-prf-19500/753a2n7580t12n7582t1+82n7584t12n7586t1mil-prf-195002n7586irhms67260marking code mev2n75842n7486
|
PDF
|
2n7584
Abstract: 2N7486 IN 753A pin configuration 2N7584T1 2N7484 2n7580 2N7586T1 2N7582T1 MIL-PRF19500 2N7580T1
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 August 2010. MIL-PRF-19500/753A 19 May 2010 SUPERSEDING MIL-PRF-19500/753 5 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
|
Original
|
mil-prf-19500/753amil-prf-19500/7532n7580t12n7582t1+92n7584t12n7586t1mil-prf-195002n75842n7486in 753a pin configuration2n74842n7580mil-prf19500
|
PDF
|