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Microchip Technology Inc JANSR2N7584T1 RH MOSFET 200V TO-254AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	JANSR2N7584T1					1 - 10 - 100 $734.21 1000 $734.21 10000 $734.21	Buy Now
Microchip Technology Inc	JANSR2N7584T1		320	28 Weeks		1 $821.80 10 $821.80 100 $763.10 1000 $692.66 10000 $692.66	Buy Now
Microchip Technology Inc 2N7584T1 Power Mosfet_T1, Projected EOL: - Contact for Pricing
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	2N7584T1			28 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG JANSR2N7584T1 Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	JANSR2N7584T1		7,193			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2N7584 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PD-94667D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides	Original	pd-94667d o-254aa 2n7584t1 irhms67260 +3irhms63260 90mev/mil-prf-19500	PDF
2n7584 Contextual Info: PD-94667E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides	Original	pd-94667e o-254aa 2n7584t1 irhms67260 +5irhms63260 90mev/c254aa mil-prf-19500 2n7584	PDF
IRHMS67260 Abstract: 2n7584 2N7584T1 Contextual Info: PD-94667F RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) Low-Ohmic	Original	pd-94667f o-254aa 2n7584t1 irhms67260 +5irhms63260 90mev/applicat254aa mil-prf-19500 2n7584	PDF
2N7584T1 Abstract: 2n7584 PD-94667D IRHMS67260 Contextual Info: PD-94667D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides	Original	pd-94667d o-254aa irhms67260 irhms63260 +42n7584t1 90mev/mil-prf-19500 2n7584	PDF
2N7586 Abstract: IRHMS67260 marking code mEV 2n7584 2N7486 Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2013. MIL-PRF-19500/753B 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED	Original	mil-prf-19500/753b mil-prf-19500/753a 2n7580t1 2n7582t1 +82n7584t1 2n7586t1 mil-prf-19500 2n7586 irhms67260 marking code mev 2n7584 2n7486	PDF
2n7584 Abstract: 2N7486 IN 753A pin configuration 2N7584T1 2N7484 2n7580 2N7586T1 2N7582T1 MIL-PRF19500 2N7580T1 Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 August 2010. MIL-PRF-19500/753A 19 May 2010 SUPERSEDING MIL-PRF-19500/753 5 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED	Original	mil-prf-19500/753a mil-prf-19500/753 2n7580t1 2n7582t1 +92n7584t1 2n7586t1 mil-prf-19500 2n7584 2n7486 in 753a pin configuration 2n7484 2n7580 mil-prf19500	PDF