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    IRHMS67160 Search Results

    IRHMS67160 Datasheets (2)

    International Rectifier
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRHMS67160
    		International Rectifier 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low Ohmic TO-254AA package. Also available in 300, 600 and 1000kRad. Original PDF 171.53KB 8
    IRHMS67160
    		International Rectifier Radiation Hardened Power MOSFET Original PDF 141.03KB 8
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    IRHMS67160 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IRHMS67160

    Power MOSFET, N Channel, 100 V, 45 A, 11 Milliohms, TO-254AA, 3 Pins, Through HL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics IRHMS67160 Tray 100
    • 1 $1952.00
    • 10 $1952.00
    • 100 $1952.00
    • 1000 $1952.00
    • 10000 $1952.00
    		Buy Now

    IRHMS67160 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PD-94723B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		pd-94723bo-254aairhms67160irhms63160+290mev/mil-prf-19500 PDF

    2n7580

    Abstract: IRHMS67160 2N7580T1
    Contextual Info: PD-94723E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7580T1 IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		pd-94723eo-254aairhms67160irhms63160+42n7580t190mev/mil-prf-195002n7580 PDF

    IRHMS63160

    Abstract: IRHMS67160
    Contextual Info: PD-94723A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		pd-94723ao-254aairhms67160irhms63160+290mev/mil-prf-19500 PDF

    IRHMS63160

    Abstract: IRHMS67160 irh*67160
    Contextual Info: PD-94723C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		pd-94723co-254aairhms67160irhms63160+390mev/mil-prf-19500irh*67160 PDF

    IRHMS63160

    Abstract: IRHMS64160 IRHMS67160 IRHMS68160
    Contextual Info: PD - 94723 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 300K Rads (Si) 0.011Ω 45A* IRHMS64160


    Original     		o-254aairhms67160irhms63160irhms64160+4irhms681601000k90mev/mil-prf-19500 PDF

    Contextual Info: PD-94723E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7580T1 IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		pd-94723eo-254aa2n7580t1irhms67160+3irhms6316090mev/mil-prf-19500 PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		30am-544-0-1737-2comdb8029cirf460+9smd transistor marking k38smd transistor k38we 751002 ssmd-6ctransistor smd k45rad-hard igbtirf3504afl2805s manufactured by international rectifier550-065 PDF

    2N7586

    Abstract: IRHMS67260 marking code mEV 2n7584 2N7486
    Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2013. MIL-PRF-19500/753B 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		mil-prf-19500/753bmil-prf-19500/753a2n7580t12n7582t1+82n7584t12n7586t1mil-prf-195002n7586irhms67260marking code mev2n75842n7486 PDF

    2n7584

    Abstract: 2N7486 IN 753A pin configuration 2N7584T1 2N7484 2n7580 2N7586T1 2N7582T1 MIL-PRF19500 2N7580T1
    Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 August 2010. MIL-PRF-19500/753A 19 May 2010 SUPERSEDING MIL-PRF-19500/753 5 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		mil-prf-19500/753amil-prf-19500/7532n7580t12n7582t1+92n7584t12n7586t1mil-prf-195002n75842n7486in 753a pin configuration2n74842n7580mil-prf19500 PDF