LAND PATTERN FOR TSOP 2 Search Results

land pattern for TSOP 2 54 pin

Abstract: land pattern for TSOP 56 pin TSOP 54 land pattern 40013A land pattern for TSOP
Contextual Info: n H igh p e rfo rm a n c e 1 M X 8 /5 1 2 K X 1 6 2.2V CMOS Flash EEPROM AS29LL8ÜÖ II 1 M X 8 / 5 1 2 K X 1 6 CMOS Flash EPROM Advance information Features •O rganization: 1M x 8/512K x 16 • Sector architecture - • Low power consumption - 8 mA typical read current

land pattern for TSOP

Abstract: 7402 ED-7402 DATA SHEET 7402 7402 data sheet ed 012GL 2008 land pattern for TSOP 2
Contextual Info: TSOP 1 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (L) HD D I2 β1 MID HD+2 β 2 β2 L b b2 Dimension Parameter e 0.50 β1 β2 γ 0.20 0.20 0.25 b2 e L1 MID I2 GDMIN. =HDMIN. −2LMAX. MID=GDMIN. −2 β 1 I2 (HDMAX. +2 β 2−MID)/2

land pattern for TSOP

Abstract: 7402 DATA SHEET 7402 land pattern for TSOP 2
Contextual Info: TSOP 1 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (Lp) I2 β1 MID HD+2 β 2 Lp β2 b b2 Dimension Parameter e 0.50 β1 β2 γ 0.20 0.20 0.25 e b2 L1 MID A3=0.25 HD D I2 GDMIN. =HDMIN. −2Lp MAX. MID=GDMIN. −2 β 1 I2 (HDMAX. +2 β 2 −MID)/2

land pattern for TSOP

Abstract: land pattern for TSOP 2
Contextual Info: TSOP 2 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (L) HE E I2 β1 MIE HE+2 β 2 L β2 b b2 Dimension Parameter e 1.27 0.80 β1 β2 γ 0.20 0.20 0.30 to 0.57 0.20 0.20 0.30 b2 e L1 MIE I2 GEMIN. =HEMIN. −2LMAX. MIE=GEMIN. −2β 1

land pattern for TSOP

Abstract: land pattern for TSOP 2
Contextual Info: TSOP 2 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (Lp) I2 β1 MIE HE+2 β 2 Lp β2 b b2 Dimension Parameter e 1.27 0.80 β1 β2 γ 0.20 0.20 0.30 to 0.57 0.20 0.20 0.30 e b2 L1 MIE A3=0.25 HE E I2 GEMIN. =HEMIN. −2Lp MAX. MIE=GEMIN. −2 β 1

Contextual Info: H ig h P e rfo rm a n c e lMx4 CMOS DRAM A S4C 14400 h II , 1 1M x 4 CMOS DRAM fast page m ode Prelim inary inform ation Features • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in te r v a l • O r g a n iz a t io n : 1 , 0 4 8 ,5 7 6 w o r d s x 4 b its

Contextual Info: d t ) LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT) IDT71V256SA In tegrated D evice T echnology, Inc. FEATURES DESCRIPTION • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options

Contextual Info: H igh perform ance 128KX8 5 V CMOS Flash EEPROM H A S29F010 II 1 2 8 K X 8 CMOS Flash EEPROM Features • O r g a n iz a t io n : 12 8 K x 8 b its • JEDEC s ta n d a r d w r i t e c y c le c o m m a n d s - p ro te c ts da ta fro m accidental changes • S e c to r E rase a r c h ite c tu r e

Contextual Info: jd t Integrated Device Technology, Inc. 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K 32K x 8-BIT) IDT71V256SB FEATURES DESCRIPTION • Ideal for high-perform ance processor secondary cache • Fast access tim es: — 12/15/20ns • Inputs are 2.5V and LVTTL com patible: V ih = 1,8V

Contextual Info: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times

DD27D

Abstract: land pattern for TSOP 2 50 MB257 TM 1828
Contextual Info: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin

woy transistor

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

ln 3624

Abstract: ansi y14.5m-1982 decimal .xxxx 71V416S15
Contextual Info: PRELIMINARY IDT71V416 3.3V CMOS STATIC RAM 4 MEG 256Kx 16-BIT I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times

BGA reflow guide

Abstract: Senju Sn3.0Ag0.5Cu land pattern for TSOP 2 86 PIN 52-pin TSOP ED-7404A senju solder paste vapor phase printer component wiring diagram for float switch with pressure tank TSOP 66 Package thermal resistance land pattern for TSOP 2 54 pin
Contextual Info: Renesas Surface Mount Package Rev.2.00 2003.12.1 Renesas Surface Mount Package User's Manual REJ11K0001-0200Z Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

Contextual Info: H igh Perform ance lMx4 CMOS DRAM |B AS4C14405 A ! M x 4 CMOS EDO DRAM Preliminary information Features • O r g a n iz a t io n : 1 , 0 4 8 , 5 7 6 w o r d s x 4 b its • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in t e r v a l • H ig h sp e ed

ed9a

Abstract: woy transistor
Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

Indium Tac Flux 020

Abstract: CU-106A CU-106A shelf life of BGAS DALE SOMC k type thermocouple utl USR(pet) gold embrittlement
Contextual Info: APPENDIX A Surface Tension and the Self-Centering of BGAs ITS PHYSICS ARE REVIEWED T O G E TH E R W I T H SOLDER TYPE, TEM PERATURE A N D THE PRESENCE OF C O N T A M I N A T E S A N D H O W THEY IN F LU E N C E By Steve G r e a t h o u s e THE S E L F - A L I G N I N G M O V E M E N T OF DEVICES D U R I N G

Intel reflow soldering profile BGA

Abstract: all ic data infrared heating gun 82425EX 80c196kb 1988 28F010 80C196KB pcb warpage after reflow Intel reflow soldering profile BGA intel conveyor belt alignment
Contextual Info: Board Solder Reflow Process Recommendations 9.1 9 Introduction In reflowed board assemblies, the solder joint quality is affected by several variables such as the component, SMT Surface Mount Technology assembly conditions, solder paste, reflow profile and board design.

Contextual Info: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71L024 Integrated Devise Technology, ]hc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

TIP 3771

Abstract: 3771 E1 3771 8 pin ic
Contextual Info: LOW PO W ER 3V C M O S S R A M 1 M EG 64Kx 16-BIT ADVANCE INFORMATION IDT71L016 In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)