LAN TRANSISTOR Search Results
LAN TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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LAN TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Lucent Technologies fiber optics cable
Abstract: LUCENT TECHNOLOGIES CAT-5 LAN lucent wdm SWITCH L3 lucent optical switch wireless lan 10 KM Lucent Technologies single mode fiber
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10gb/s500-600mb/s1000-baset10-gig+8 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 0.7±0.1 12.9±0.5 d p lan inc ea se ed lud p lan m m es |
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2002/95/ec2sc26312sa1123 | |
dec 21140
Abstract: DECchip 21140 21140A 100BASE-FX DECchip+21140
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1140a10mb/s100mb/scsr15+5 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi |
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2002/95/ec2sa1309a2sc3311a | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi |
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2002/95/ec2sc3311a2sa1309a | |
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Contextual Info: Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm 2.5±0.1 R 0.9 R 0.7 1.0 2.0±0.2 4.1±0.2 • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es ht visi |
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2sc2636 | |
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Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 R 0.9 R 0.7 • Absolute Maximum Ratings Ta = 25°C 1.0 4.1±0.2 2.0±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es |
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2sc22062sa1254 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi |
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2002/95/ec2sc2590o-126b | |
C1005COG1H101JT
Abstract: Samsung 2N2222 C1005X7R1C103KT MCR01MZsF 2N2907 PNP Transistor RF1K49093 505 transistor TRANSISTOR C144 DSSS transceiver 20dB processing gain AM79C930
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an9624hfa3925hfa3424hfa3724+12 | |
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Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 d p lan inc ea se ed lud p lan m m es ht visi |
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2sa09212sa9212sc1980 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f |
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2002/95/ec2sc5121 | |
MCR01MZsF
Abstract: 505 transistor C1005COG1H101JT SMT0402 Samsung 2N2222 gh c101 C1005X7R1C103KT 2N2907 PNP Transistor MCR01MZSJ0R00 C124-C130
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an9624mcr01mzsf505 transistorc1005cog1h101jt+7 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 3 2 0.5±0.08 2.5±0.1 0.4±0.04 d p lan inc ea se ed lud p lan m m es |
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2002/95/ec2sb15992sd2457 | |
RJMG
Abstract: 8224 intel 0x150F 82580 nec 2501 RTL 8189 JFM38U1 laser diode specification sheet 81210 0x35A
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1000base-t100base-tx10base-t1000base-sx/+14 | |
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intel 8203
Abstract: RTL 8188 82580 82575 0x1528 electromagnetic pulse kit INTEL 845 MOTHERBOARD CIRCUIT diagram foxconn ls 36 motherboard manual 8237 direct memory access controller 81217
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1000base-t100base-tx10base-t1000base-sx/+14 | |
July 2002Contextual Info: Test & Measurement Annual July 2002 Standard Ethernet Hub or Switch PC on LAN Ethernet LAN INTERNET 10BASE-T i16 Controller with EI option 10BASE-T "The OPC Specification is a nonproprietary technical specification that defines a set of standard interfaces based |
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10base-trs-232rs-485july 2002 | |
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Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow |
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2sb15032sd2276 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll |
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2002/95/ec2sc3611o-126b | |
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Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow |
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2sa09002sa9002sc1868o-126b | |
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Contextual Info: Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2250 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow |
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2sb14902sd2250 | |
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Contextual Info: Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll |
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2sc46062sa1762 | |
Laser Diode 850nm 1300nm
Abstract: laser diode mosfet triggering circuit common cathode photodiode MA3286 "Fiber Optic Transmitters" 780NM Laser-Diode automatic laser power control Longwave laser MA328 Semiconductor Laser International
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25gbps/2max3286/max3296780nm850nm+11 | |
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Contextual Info: 19-1249; Rev 1; 11/04 KIT ATION EVALU E L B AVAILA 622Mbps LAN/WAN Laser Driver with Automatic Power Control and Safety Shutdown _Features The MAX3766 is a complete, easy-to-program laser driver for fiber optic LAN transmitters, optimized for |
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622mbpsmax376625gbps | |
82558B
Abstract: c65 004 82555 623377-001 BD109 heartbeat sensor intel 82555 lan transistor intel desktop mother board service manual 82558-B
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ap-3880101aaa23-jan-199882558b+9 | |