L3S337 Search Results

1L43

Abstract: wf vqc 10 d a6 MH 7420 MSM8128-8S
Contextual Info: MOSAIC SEMICONDUCTOR INC S3E ]> Inoe L3S337T 0GG123D 234 128K x 8 SHAM molate MSM8128-85/10/12 Issue 3.0 : October 1992 Semiconductor f Pin Definition NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1 02 GNO 131,072 x 8 CMOS High Speed Static RAM Features Fast Access Times of 85/100/120 ns

Contextual Info: MOSAIC SEMICONDUCTOR INC 40E » m ^33337^ □ □ G 0 3 2 ci ? ^ M O C 7 ^ -2 3 -/y 512K x 8 SRAM Module Issue 1.0 : April 1991 Mosaic MS8512RKX/A-55/70/85 Semiconductor ADVANCE PRODUCT INFORMATION Inc. 524,288 x 8 CMOS High Speed Static RAM Pin Definition

LM 7420

Contextual Info: 512K x 8 FLASH mosaic MFM8516-80/90/12/15 Issue 4.1: March 1997 semiconductor, inc. 524,288 bit FLASH EEPROM Features Description • 4 Megabit FLASH memory. The MFM8516 is a 4 Megabit CMOS 5.0V only FLASH Monolithic memory organised as 512K X 8. Access times of 80, 90,120 and 150 ns are

67S4000A

Abstract: 3D-30 A45 so
Contextual Info: mosaic 128KX 3 2 SRAM Module PUMA67S4000/A-45/55/70 semiconductor, inc. Issue 4.0: March 1996 4,194,304 bit CMOS High Speed Static RAM Description The PUMA67S4000/A is a 4Mbit CMOS High Speed Static RAM organised as 128kx 32 in a JEDECJ-leaded Ceramic Surface Mount

P 600 I 1903

Abstract: moc 4-pin
Contextual Info: MOSAIC SEMICONDUCTOR INC hHE D • b a S B a ? 1! 000E057 SOS ■ M O C 128KX 32 EEPROM MODULE molate PUMA 67E4000X-15/20/25 Issue 1.2: Septembed 993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc " 4,194,304 bit MNOS High Speed EEPROM Features •

Contextual Info: 128Kx 32 FLASH Module molaic PUMA 2F4001 -12/15/20 Issue 1.1 rNovember 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r 4,194,304 bit CMOS FLASH Memory Pin Definition Features 1 o 08 o 09 o 010 o A14 o A16 o A11 o Access Times of 120 /150 /200 User Configurable as 8 / 1 6 / 3 2 bit wide output.

Contextual Info: MFM8T516-90/12/15 mosaic 512K x 8 FLASH Issue 4.2 June 1996 semiconductor, inc. 524,288 bit FLASH EEPROM Description Features The MFM8T516 is a 4 Megabit CMOS 5.0V only • FLASH Monolithic memory organised as 512K X 8. • Access times of 90 ,1 20 and 150 ns are available.

Contextual Info: PUMA 3FI6006-90/12/15 mosaic semiconductor, inc. 512K X 32 FLASH MODULE Issue 4.0 August 1995 Description The PUMA. 3F16006 is a 16 Megabit CMOS 5.0V only FLASH Module in a 6 6 pin PGA package, lAfoich is configurable as 8 , 16, 32 bit wide using CE1-4. Access times of 90, 120 and 150 ns are

pinout 7420

Contextual Info: 128Kx 32 EEPROM Module mosaic PUMA67E4005/A-15/17/20 Issue4.0 : October 1995 semiconductor, inc. Description 4 ,1 9 4 ,3 0 4 bit CMOS EEPROM Module The P U M A 6 7 E 4 0 0 5 /A is a 4M b it CMOS EEPROM module organised as 128k x 32 in a 6 8 pin JEDECJleaded Ceramic Surface Mount Substrate. The output

a42s

Abstract: Mosaic OS
Contextual Info: MOSA IC S E M I C O N D U C T O R INC blE D • b 3 S 3 3 ? T □ □ □ 1 7 4 ‘î T1S ■ MOC 128K X 8 SRAM molate MSM8128-45/55/70 Issue 3.2 : January 1993 Pin Definition S em iconductor Inc. 131,072 X 8 CMOS High Speed Static RAM Features Very Fast Access Times of 45/55/70 ns

pin diagram ic 7420

Abstract: 7420 ic
Contextual Info: PUMA 67F16006-90/12/15 /2 s mosaic 512Kx 32 FLASH MODULE Issue 4.0 September 1995 semiconductor, inc. Description The PUMA 67F16006 is a 16 Megabit CMOS 5.0V only FLASH Module in a 6 8 pin JLCC package, with access times of 90,120 and 150 ns. The oyput width is configurable as 8 ,1 6 ,3 2 bit wide using

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E ]> D0D1257 437 • ■ M0 C 256K X 8 S R A M moXaic MS8256SC-10/ 12/15 Issue 2.0 : September 1990 PRELIMINARY Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Features Access Times of 100/120/150 ns JEDEC Standard 32 pin OIL footprint

Contextual Info: 3 2 K x 8 mosaic SRAM MSM832-55/70/85/10 Issue 4.2 : JUNE 1996 semiconductor, inc. 32,768 x 8 CMOS High Speed Static RAM Description Features The MSM832 is a high speed Static RAM organ­ ised as 32K x 8 available with access times of 5 5 ,7 0 ,8 5 or 100 ns. The device is available in