L-BAND 1200-1400 MHZ Search Results

L-Band 1200-1400 MHz

Abstract: diode gp 429 Radar x band radar HV400
Contextual Info: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor

transistor s 1014

Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
Contextual Info: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor

ALR006

Abstract: ASI10510
Contextual Info: ALR006 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR006 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 9.5 dB at 6.0 W/ 1400 MHz • Omnigold Metalization System MAXIMUM RATINGS

GROUND BASED RADAR

Abstract: transistor SMD R1D
Contextual Info: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications

ALR100

Abstract: ASI10514
Contextual Info: ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG L DESCRIPTION: N J O A 1 B The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. D 2 3 M FEATURES: F • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz

"RF Power Transistor"

Abstract: 1200 - 1400 MHz L-Band Applications RZ1214B35Y
Contextual Info: RZ1214B35Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B35Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 35 W/ 1400 MHz • Omnigold Metalization System

MIL-STD-750D

Abstract: L-Band 1200-1400 MHz 8 HJC Radar F-1200 HVV1214-25 HVVi Semiconductors
Contextual Info: HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty DESCRIPTION PACKAGE The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from

RZ1214B65Y

Abstract: "RF Power Transistor" RF NPN POWER TRANSISTOR 2.5 GHZ
Contextual Info: RZ1214B65Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B65Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 80 W/1400 MHz • Omnigold Metalization System

ALR100

Abstract: ASI10514
Contextual Info: ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. O A B E K D FEATURES: C G • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Radar pallet

Abstract: L-Band 1200-1400 MHz RESISTANCE RF 800W 1214-800P
Contextual Info: 1214-800P 800W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 800 Watts - 300µs, 10%, +50V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance Reduce System Size and Components

1214-800P

Abstract: 800W L-Band 1200-1400 MHz x band radar
Contextual Info: 1214-800P Rev. C 1214-800P 800W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 800 Watts - 300µs, 10%, +50V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance

L-Band 1200-1400 MHz

Abstract: 1214-700P Radar pallet
Contextual Info: 1214-700P Rev B 1214-700P 700W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 700 Watts - 300µs, 10%, +50V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance

1214-550P

Abstract: Radar pallet L-Band 1200-1400 MHz
Contextual Info: 1214-550P Rev B 1214-550P 550W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 550 Watts - 300µs, 10%, +42V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance

Radar pallet

Abstract: L-Band 1200-1400 MHz 1214-550P
Contextual Info: 1214-550P 550W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 550 Watts - 300µs, 10%, +42V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance Reduce System Size and Components

700W

Abstract: L-Band 1200-1400 MHz
Contextual Info: 1214-700P1 700W PSM - PLUG AND PLAY - For L-Band Pulsed Radar Application 700 Watts - 300µs, 10%, +50V L-Band Pulsed Radar 1200 - 1400 MHz • • • • Easy To Use – 50 Ω Plug-and-Play Reduce Design Cycle Time Improve System Performance Reduce System Size and Components

HVV1214-140

Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
Contextual Info: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain

ALR006

Abstract: ASI10510 transistor 306 x
Contextual Info: ALR006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR006 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 9.5 dB at 6.0 W/ 1400 MHz

ALR060

Abstract: ASI10513
Contextual Info: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz

ALR015

Abstract: ASI10511
Contextual Info: ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR015 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 8.5 dB at 15 W/1400 MHz