L O1B Search Results
L O1B Datasheets Context Search
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Contextual Info: User’s M anual, V1.0, Mar. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53, |
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tc11ibd-81541 | |
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Contextual Info: User’s M anual, V1.1, Apr. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, |
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tc11ibd-81541 | |
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Contextual Info: fax id: 6147 U Itra371 28V UltraLogic 3.3V 128-Macrocell ISR™ CPLD • High speed Features — fM a x = 1 2 5 M H z 1 2 8 m a c r o c e l l s in e i g h t l o g i e b l o e k s — t PD = 1 0 n s 3.3V In-System R e p ro g ra m m a b le ISR™ — t s = 5. 5 n s |
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itra371128-macrocell | |
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Contextual Info: TT WS128K32-XXX l/l/HITE /MICROELECTRONICS 128 Kx32 SRAM MODULE Organized as 128Kx32; User Configurable as 256Kx16 or FEATURES Commercial, Industrial and M ilitary Temperature Ranges • Access Times of 55 to 120nS 5 Volt Power Supply ■ MIL-STD-883 Compliant Devices Available |
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ws128k32-xxx128kx32256kx16120ns+6 | |
smd diode marking LM
Abstract: 4166 ic equivalent PEB 4165 T ntp 3000 HIGHWAY drv 801 ic MVAM-1 PEB 4166 T PEB31666 PEB3465 PEB4164
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d-81541smd diode marking lm4166 ic equivalentpeb 4165 t+7 | |
z845
Abstract: TD24 hm4 SMD
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1-100mhz1-30mhz40mhz50mhz+8 | |
VEB mikroelektronik
Abstract: mikroelektronik DDR aktive elektronische bauelemente ddr TESLA Tesla katalog 74c915 V4093D 4502c mosfet 4040BC K561TM2
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hc4316hc5034351d/lveb mikroelektronik+9 | |
SH-1H
Abstract: sharp CCD Image Sensor
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lz2324akapproxi-matelyo00opixels16-pinwdip016-n-0500c+2 | |
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Contextual Info: D RA W IN G M A D E IN A M E R IC A N PRO JECTIO N NUMBER C-1bb5Qi H USED ON B fl B I H - 'J - . S M i k 7I is : r ^ 7,5*4 i 5,95 \ s I 1 |L J I 1 7 _k u u □ _ D L 5EC TT D N B - R R - £.z4 Ararzs Z M r'n A 0 A/Af£ZK« £ MW /za M M M M ZOOS, M M f/2£ M S |
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lbb501292-h | |
information applikation
Abstract: DL193D information applikation mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 "Mikroelektronik" Heft mikroelektronik applikation VEB mikroelektronik applikation heft DL192D
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information applikationdl193dinformation applikation mikroelektronikmikroelektronik information applikation+6 | |
CCDs Charge Coupled Devices
Abstract: RD13B
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opa256c-1256-bitpa256c-1rd13bl+3 | |
256Kx8bitContextual Info: M4HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 A18C 1 • Read Access Times of 150, 200, 250, 300ns ■ JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package 300 |
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we512k8we256k8we128k8-xcx512kx8+6 | |
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Contextual Info: This is a partial data sheet. For complete data sheet, see Section 8, Modules. CYM1624 CYPRESS SEMICONDUCTOR 6 4 K x l 6 SRAM Module Features Functional Description • High-density X-megabit SRAM module T h e CY M 1624 is a very high perform ance 1-m egabit static R A M m odule organized |
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cym1624i1611cym1622i/o13+3 | |
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Contextual Info: N R S 2 3 2 C L I N E J U 6 4 1 B D R I V E R / R E C E I V E R GENERAL DESCRIPTION The NJU6401B is a RS232C line driver/receiver compos ed of 3 drivers and 5 receivers. The drivers convert the input of TTL level signals into RS232C level signals and limit the slew rate below |
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nju6401brs232crs-232cnju6401bd+1 | |
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Contextual Info: MITSUBISHICÍIICMPTR/MIPRC .-O LIE D • b24Tfl2ö Q G 1 7 h S 3 SSb « M i m V M ITSU BISH I L S u M33241GS CM OS D IR E C T M EM ORY A C C E S S CONTROLL.ER M 32/DM AC) DESCRIPTION M33241GS(M32/DMAC) It a hlgh-lunctlon, high-perform ance 32-blt direct memory a c c e u controller that accesses |
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b24tfl2m33241gs32/dmm32/dmac+3 | |
2N4116
Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
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0-20a0-100v2n50062n5008+12 | |
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Contextual Info: O K I Semiconductor M S M 5 6 V 1 6 4 0 0 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTIO N The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and |
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152-wordmsm56v16400cycles/64 | |
100313PC
Abstract: 100313QC 100313QI 100313SC M24B MO-047 MS-013 N24E V28A
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100313sc24-lead100313pc100313qc+6 | |
100313QCContextual Info: Revised November 1999 100313 Low Power Quad Driver General Description Features The 100313 is a monolithic quad driver with two OR and two NOR outputs and common enable. The common input is buffered to minimize input loading. If the D inputs are not used the Enable can be used to drive sixteen 50Ω lines. All |
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100313sc100313pc100313qc100313qi | |
16-LINE TO 4-LINE PRIORITY ENCODERS
Abstract: t04 68 3 pin diode t04 68 3 pin transistor EB 36 3C GR "silicon on sapphire" 74 LS 04 Logic Gates cmos dual s-r latch MIL-STD-38510 multiplexers 74 LS 150 transistor T04
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54hsc/tds3594-354/74lsds3594-4+10 | |
74F539
Abstract: MC54 MC74FXXXDW
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mc54/74f53974f539mc54mc74fxxxdw | |
HD74AC539
Abstract: Hitachi DSA00333
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hd74ac539hitachi dsa00333 | |
SN74LS47N PIN DIAGRAM
Abstract: IC TTL 7400 diagram and truth table 74lsxxx data sheet 74 LS147 pin configuration layout INTERNAL STRUCTURE LS156 SN74LS47N pin configuration DL121 IC 7400 diagram and truth table philips semiconductor data handbook sn74ls47n counter
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dl121/djan-2000r14525dl121+9 | |
HD74AC539
Abstract: Hitachi DSA00220
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hd74ac539ade-205-398hitachi dsa00220 | |