KTN2907A Search Results

ZH SOT-23

Abstract: KTN2907AS SOT-23 KTN2907AS zH marking
Contextual Info: SEMICONDUCTOR KTN2907AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZH 2 1 Item Marking Description Device Mark ZH KTN2907AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KTN2907AU

Abstract: mark ZH ZH12 zH marking
Contextual Info: SEMICONDUCTOR KTN2907AU MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZH 1 2 Item Marking Description Device Mark ZH KTN2907AU hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. ・Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

KTN2907AE

Abstract: KTN2222AE
Contextual Info: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. D H Low Saturation Voltage G A 2 1 3 DIM A B : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

Contextual Info: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. D H Low Saturation Voltage G A 2 1 3 DIM A B : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

H2907A

Abstract: h2907 KTN2907A SAT-2
Contextual Info: PNP SILICON 汕头华汕电子器件有限公司 TRANSISTOR 对应国外型号 KTN2907A H2907A █ 主要用途 █ 外形图及引脚排列 放大开关应用。 █ 极限值（Ta=25℃） TO-92 T stg ——贮存温度………………………………… -55~150℃

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KTN2907AU

Abstract: KTN2907U
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA E LE C T R O N IC S CO.,LTD. KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA Max. ; V = - 3 0 V , Veb=-0.5V. • Low Saturation Voltage

2907A similar

Abstract: KTN2907
Contextual Info: SEM ICONDUCTOR KTN2907/A TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA M ax. ; VCE=-30V, V EB=-0.5V. • Low Saturation Voltage DIM A B f t ID : VCE(Sat)—0.4V (M ax.); Ic=-150mA, IB=-15mA.

CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV

HC 5287

Abstract: sck 104 thermistor 16T202DA1 RBS 3101 pm3a104k 16t202da1e 103 2KV ZNR 471 710 opto coupler HA 1156 wp
Contextual Info: D C B A VDC_AD support DA1 KDS226 MC_CON AC2 AC1 PV3.3 DCP 1 3 PV3.3 C35 104,50V DCP 2 PV5 Q2 KRC101S R9 4.7KJ0 R39 100KF,1W R40 100KF,1W 100KF,1W R41 R42 100KF,1W VDC_FB Z1 ZNR 471 R51 4.7KJ0 support 2 1 R38 2.8KF0 2 1 PV5 U1 KA5H0280R SPS 2 2 support 500K,2W

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

2sc3205

Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 kta949 2SC3192 C4369 2SC3226 2Ns551
Contextual Info: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No ^ FE - Applications (T Y P M IN (m W ) Ic Iß (V) (mA) (V) <mA) (mA) 6 1 - - (M H z ) V CT. (V) (550) 6 V CE •e f (mA) (dB) (V) (mA) (M H z ) I 5.0 6 - 1 Ic 20 100 40^200 6 1 - — — (550)

KTN2369AU

Abstract: KTN2369U KTN2907AU KTN2907U
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, Veb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.

KTN2907AS

Abstract: KTN2907S KTN2907AS SOT-23 KTN2907S SOT-23
Contextual Info: KEC SEMICONDUCTOR KTN2907S/AS KOREA E LE C T R O N IC S CO.,LTD. T E C H N IC A L D A T A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA M ax. ; V Ce =-30V, V eb=-0.5V. DIM

2sc3205

Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 2SC3194 2sc3226 C4369 kta949 2sc3192
Contextual Info: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No V CEO A M RF 30 20 fT (T Y P M IN MAX NF (m W ) ^CE (V) (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 V CE (V) (dB) I 5.0 6 - 1 100 50 TO-92(M) F5 50 TO-92(C) F3 6 - 1 100

ZH SOT-23

Abstract: KTN2907S sot23 transistor marking ZH KTN2907AS KTN2907AS SOT-23
Contextual Info: SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current E B L L ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-150mA, IB=-15mA. 3 G A 2 D : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

marking zg

Contextual Info: SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ・Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D H ・Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

2222a

Abstract: KTN2907AU KTN2907U
Contextual Info: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES ・Low Leakage Current B M : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. M D 3 1 G ・Low Saturation Voltage J A 2 : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

KTN2222ae

Abstract: MARKING ZG KTN2907AE
Contextual Info: SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D H Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Contextual Info: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power