KTN2907 Search Results

KTN2907 Datasheets (27)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
KTN2907	Korea Electronics	Switching Transistor	Original	PDF	82.71KB	4
KTN2907	Korea Electronics	V(ceo): 30V I(c): 600mA P(c): 625mW NPN Silicon Transistor	Scan	PDF	507.53KB	5
KTN2907	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	Scan	PDF	371.06KB	4
KTN2907	Korea Electronics	Switching Transistor	Scan	PDF	384.38KB	4
KTN2907	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	75.18KB	1
KTN2907	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	37.4KB	1
KTN2907A	Korea Electronics	Switching Transistor	Original	PDF	82.72KB	4
KTN2907A	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	Scan	PDF	371.06KB	4
KTN2907A	Korea Electronics	V(ceo): 40V I(c): 600mA P(c): 625mW NPN Silicon Transistor	Scan	PDF	507.53KB	5
KTN2907A	Korea Electronics	Switching Transistor	Scan	PDF	384.38KB	4
KTN2907(A)	Unknown	Silicon PNP Transistor	Scan	PDF	371.07KB	4
KTN2907A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	75.18KB	1
KTN2907A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	37.4KB	1
KTN2907AS	Korea Electronics	Switching Transistor	Original	PDF	587.66KB	4

KTN2907AS	Korea Electronics	Switching Transistor	Scan	PDF	399.48KB	4
KTN2907AS	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	Scan	PDF	377.53KB	4
KTN2907(A)S	Unknown	Silicon PNP Transistor	Scan	PDF	377.52KB	4
KTN2907AU	Korea Electronics	Switching Transistor	Original	PDF	575.82KB	4
KTN2907AU	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	Scan	PDF	359.08KB	4
KTN2907AU	Korea Electronics	Switching Transistor	Scan	PDF	393.49KB	4

KTN2907 Price and Stock

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KEC


KEC KTN2907AS-RTK/P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ameya Holding Limited	KTN2907AS-RTK/P		36,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

KTN2907 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
KTN2907S SOT-23 Abstract: KTN2907S marking zd Contextual Info: SEMICONDUCTOR KTN2907S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZD No. 1 Item Marking Device Mark ZD KTN2907S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method	Original	ktn2907s ot-23 ktn2907s sot-23 marking zd	PDF
ZH SOT-23 Abstract: KTN2907AS SOT-23 KTN2907AS zH marking Contextual Info: SEMICONDUCTOR KTN2907AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZH 2 1 Item Marking Description Device Mark ZH KTN2907AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	ktn2907as ot-23 zh sot-23 ktn2907as sot-23 +1zh marking	PDF
Contextual Info: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2008. 8. 29 Revision No : 5 1/4	Original	ktn2907u/au	PDF
KTN2907AU Abstract: KTN2907U Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA E LE C T R O N IC S CO.,LTD. KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA Max. ; V = - 3 0 V , Veb=-0.5V. • Low Saturation Voltage	OCR Scan	ktn2907u/au -50na -150ma -15ma +2ktn2907u ktn2907au	PDF
2907A similar Abstract: KTN2907 Contextual Info: SEM ICONDUCTOR KTN2907/A TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA M ax. ; VCE=-30V, V EB=-0.5V. • Low Saturation Voltage DIM A B f t ID : VCE(Sat)—0.4V (M ax.); Ic=-150mA, IB=-15mA.	OCR Scan	-50na -150ma -15ma ktn2222/2222a +6ktn2907/2907a 2n2907/2907a ktn2907/a ktn29 2907a similar ktn2907	PDF
KTN2907AU Abstract: mark ZH ZH12 zH marking Contextual Info: SEMICONDUCTOR KTN2907AU MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZH 1 2 Item Marking Description Device Mark ZH KTN2907AU hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	ktn2907au mark zh zh12 zh marking	PDF
KTN2369AU Abstract: KTN2369U KTN2907AU KTN2907U Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, Veb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.	OCR Scan	ktn2907u/au -50na -150ma -15ma +5ktn2222u/2222au ktn2907u ktn2907au ktn2369au ktn2369u	PDF
KTN2907AS Abstract: KTN2907S KTN2907AS SOT-23 KTN2907S SOT-23 Contextual Info: KEC SEMICONDUCTOR KTN2907S/AS KOREA E LE C T R O N IC S CO.,LTD. T E C H N IC A L D A T A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA M ax. ; V Ce =-30V, V eb=-0.5V. DIM	OCR Scan	ktn2907s/as -50na -150ma -15ma +6ktn2222s/2222as ktn2907s ktn2907as 10x8x0 ktn2907as sot-23 ktn2907s sot-23	PDF
ZH SOT-23 Abstract: KTN2907S sot23 transistor marking ZH KTN2907AS KTN2907AS SOT-23 Contextual Info: SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current E B L L ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-150mA, IB=-15mA. 3 G A 2 D : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.	Original	ktn2907s/as -150ma -15ma -50na +7ktn2222s/2222as 10x8x0 zh sot-23 ktn2907s sot23 transistor marking zh ktn2907as ktn2907as sot-23	PDF
Contextual Info: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. ・Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	ktn2907ae -50na -150ma -15ma +3ktn2222ae -50ma 100mhz	PDF
2222a Abstract: KTN2907AU KTN2907U Contextual Info: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES ・Low Leakage Current B M : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. M D 3 1 G ・Low Saturation Voltage J A 2 : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	ktn2907u/au -150ma -15ma ktn2222u/2222au +4-50na 2222a ktn2907au ktn2907u	PDF
KTN2907AE Abstract: KTN2222AE Contextual Info: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. D H Low Saturation Voltage G A 2 1 3 DIM A B : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	ktn2907ae -50na -150ma -15ma +1ktn2222ae	PDF
2n2907 or similar PNP Abstract: transistor 2222a to-92 KTN2907 KTN2907A KTN2907 or similar PNP Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2907/A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.	OCR Scan	ktn2907/a -50na -150ma -15ma +9ktn2222/2222a ktn2907/2907a 2n2907/2907a ktn2907 ktn2907a mill00 2n2907 or similar pnp transistor 2222a to-92 ktn2907 or similar pnp	PDF
ktn2907as Abstract: KTN2907S Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM • Low Leakage Current	OCR Scan	ktn2907s/as -50na -150ma -15ma +5ktn2222s/2222as ktn2907s ktn2907as 20tage 10x8x0	PDF

Contextual Info: SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2002. 4. 9 Revision No : 4 1/4	Original	ktn2907s/as	PDF
Contextual Info: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. D H Low Saturation Voltage G A 2 1 3 DIM A B : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	ktn2907ae -50na -150ma -15ma +1ktn2222ae	PDF
H2907A Abstract: h2907 KTN2907A SAT-2 Contextual Info: PNP SILICON 汕头华汕电子器件有限公司 TRANSISTOR 对应国外型号 KTN2907A H2907A █ 主要用途 █ 外形图及引脚排列放大开关应用。 █ 极限值（Ta=25℃） TO-92 T stg ——贮存温度………………………………… -55~150℃	Original	ktn2907a h2907a 625mw -600ma +8-00ma -10aie -10maib -10aic -150ma -500ma h2907 sat-2	PDF
KTN2907A Abstract: 2907a 2907A similar KTN2907 KTN2222 transistor 2222a Contextual Info: SEMICONDUCTOR KTN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	ktn2907/a -50na -150ma -15ma +12ktn2222/2222a ktn2907/2907a 2n2907/2907a ktn29ncy -50ma 100mhz ktn2907a 2907a 2907a similar ktn2907 ktn2222 transistor 2222a	PDF
2907 Abstract: a 2907 KTN2907 Contextual Info: SEMICONDUCTOR KTN2907 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KTN 2907 816 No. Item 1 2 3 98.06.23 Marking Description KTN Series Name 2907 Device Name Device Name Lot No. Revision No : 8 Year 0 ~ 9 : 1900~1999 16 Week	Original	ktn2907 2907 a 2907	PDF
KTN2907U Contextual Info: SEMICONDUCTOR KTN2907U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZD 1 2 Item Marking Description Device Mark ZD KTN2907U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	ktn2907u	PDF
Contextual Info: SEMICONDUCTOR KTN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ・Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. ・Low Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	ktn2907/a -50na -150ma -15ma +5ktn2222/2222a ktn2907/2907a 2n2907/2907a -500ma -50ma	PDF
2907a Abstract: KTN2907A KTN2907 transistor 2222a to-92 Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTN2907/A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA Max. ; V ce=-30V, Veb=-0.5V. • Low Saturation Voltage	OCR Scan	ktn2907/a -50na -150ma -15ma +7ktn2222/2222a ktn2907/2907a 2n2907/2907a ktn2907 ktn2907a 2907a transistor 2222a to-92	PDF
KTN2907AU Abstract: KTN2907U Contextual Info: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES ・Low Leakage Current M : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. B M D 3 1 G ・Low Saturation Voltage J A 2 : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	ktn2907u/au -150ma -15ma ktn2222u/2222au +3-50na ktn2907u ktn2907au	PDF
KTN2222U Contextual Info: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D 3 1 G Low Saturation Voltage J A 2 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.	Original	ktn2222u/au 150ma ktn2907u/2907au ktn2222u +1ktn2222au	PDF

KTN2907 Search Results

KTN2907 Datasheets (27)

KTN2907 Price and Stock

KEC KTN2907AS-RTK/P

KTN2907 Datasheets Context Search

KTN2907S SOT-23

ZH SOT-23

KTN2907AU

2907A similar

KTN2907AU

KTN2369AU

KTN2907AS

ZH SOT-23

2222a

KTN2907AE

2n2907 or similar PNP

ktn2907as

H2907A

KTN2907A

2907

KTN2907U

2907a

KTN2907AU

KTN2222U