KTN29 Search Results

KTN2907S SOT-23

Abstract: KTN2907S marking zd
Contextual Info: SEMICONDUCTOR KTN2907S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZD No. 1 Item Marking Device Mark ZD KTN2907S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

ZH SOT-23

Abstract: KTN2907AS SOT-23 KTN2907AS zH marking
Contextual Info: SEMICONDUCTOR KTN2907AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZH 2 1 Item Marking Description Device Mark ZH KTN2907AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2008. 8. 29 Revision No : 5 1/4

KTN2907AU

Abstract: KTN2907U
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA E LE C T R O N IC S CO.,LTD. KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA Max. ; V = - 3 0 V , Veb=-0.5V. • Low Saturation Voltage

2907A similar

Abstract: KTN2907
Contextual Info: SEM ICONDUCTOR KTN2907/A TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA M ax. ; VCE=-30V, V EB=-0.5V. • Low Saturation Voltage DIM A B f t ID : VCE(Sat)—0.4V (M ax.); Ic=-150mA, IB=-15mA.

KTN2907AU

Abstract: mark ZH ZH12 zH marking
Contextual Info: SEMICONDUCTOR KTN2907AU MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZH 1 2 Item Marking Description Device Mark ZH KTN2907AU hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KTN2369AU

Abstract: KTN2369U KTN2907AU KTN2907U
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, Veb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.

KTN2907AS

Abstract: KTN2907S KTN2907AS SOT-23 KTN2907S SOT-23
Contextual Info: KEC SEMICONDUCTOR KTN2907S/AS KOREA E LE C T R O N IC S CO.,LTD. T E C H N IC A L D A T A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA M ax. ; V Ce =-30V, V eb=-0.5V. DIM

ZH SOT-23

Abstract: KTN2907S sot23 transistor marking ZH KTN2907AS KTN2907AS SOT-23
Contextual Info: SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current E B L L ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-150mA, IB=-15mA. 3 G A 2 D : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.

Contextual Info: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. ・Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

2222a

Abstract: KTN2907AU KTN2907U
Contextual Info: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES ・Low Leakage Current B M : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. M D 3 1 G ・Low Saturation Voltage J A 2 : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

KTN2907AE

Abstract: KTN2222AE
Contextual Info: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. D H Low Saturation Voltage G A 2 1 3 DIM A B : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

2n2907 or similar PNP

Abstract: transistor 2222a to-92 KTN2907 KTN2907A KTN2907 or similar PNP
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2907/A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.

ktn2907as

Abstract: KTN2907S
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM • Low Leakage Current

Contextual Info: SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2002. 4. 9 Revision No : 4 1/4

Contextual Info: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. D H Low Saturation Voltage G A 2 1 3 DIM A B : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

H2907A

Abstract: h2907 KTN2907A SAT-2
Contextual Info: PNP SILICON 汕头华汕电子器件有限公司 TRANSISTOR 对应国外型号 KTN2907A H2907A █ 主要用途 █ 外形图及引脚排列 放大开关应用。 █ 极限值（Ta=25℃） TO-92 T stg ——贮存温度………………………………… -55~150℃

KTN2907A

Abstract: 2907a 2907A similar KTN2907 KTN2222 transistor 2222a
Contextual Info: SEMICONDUCTOR KTN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

2907

Abstract: a 2907 KTN2907
Contextual Info: SEMICONDUCTOR KTN2907 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KTN 2907 816 No. Item 1 2 3 98.06.23 Marking Description KTN Series Name 2907 Device Name Device Name Lot No. Revision No : 8 Year 0 ~ 9 : 1900~1999 16 Week

KTN2907U

Contextual Info: SEMICONDUCTOR KTN2907U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZD 1 2 Item Marking Description Device Mark ZD KTN2907U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR KTN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ・Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. ・Low Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

2907a

Abstract: KTN2907A KTN2907 transistor 2222a to-92
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTN2907/A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA Max. ; V ce=-30V, Veb=-0.5V. • Low Saturation Voltage

KTN2907AU

Abstract: KTN2907U
Contextual Info: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES ・Low Leakage Current M : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. B M D 3 1 G ・Low Saturation Voltage J A 2 : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

KTN2222U

Contextual Info: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D 3 1 G Low Saturation Voltage J A 2 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.