KSR2106 Search Results

KSR1106

Abstract: KSR2106
Contextual Info: KSR1106 KSR1106 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=47KΩ) • Complement to KSR2106 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: KSR1106 KSR1106 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=47KΩ) • Complement to KSR2106 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: KSR1106 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10Kii, R2=47Kii) • Complement to KSR2106 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

KSR1106

Abstract: KSR2106
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSR1106 SWITCHING APPLICATION B ias R esistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =10K£1, R2=47K£1) • C om plem ent to KSR2106 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: KSR2106 KSR2106 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to KSR1106 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: KSR2106 KSR2106 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to KSR1106 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: KSR2106 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R ^ IO K iî, R2=47Ki2) • Complement to KSR1106 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Marking al pnp

Abstract: KSR1106 KSR2106
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2106 SWITCHING APPLICATION Bias Resistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R ^ IO K Q , R2=47K£i) • C om plem ent to K S R 1106 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

KSR1106

Abstract: KSR2106
Contextual Info: KSR2106 KSR2106 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to KSR1106 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1106

Abstract: KSR2106
Contextual Info: KSR1106 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=47KΩ) • Complement to KSR2106 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

Contextual Info: KSR2106 KSR2106 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to KSR1106 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2106 SWITCHING APPLICATION B ias R esistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (1 ^= 1 0K£1, R2=47K£1) • C om plem ent to K S R 1 106

KSR2106

Contextual Info: KSR2106 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, =10kfl, R2=47kfl) • Complement to KSR1106 SO T-23 ABSO LUTE MAXIM UM RATINGS (TA= 2 5 t)

KSR1106

Abstract: KSR2106
Contextual Info: KSR2106 KSR2106 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to KSR1106 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1106

Abstract: KSR2106
Contextual Info: KSR2106 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to KSR1106 SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

10KO

Abstract: KSR1106 KSR2106
Contextual Info: IME O • 7 ^ 4 1 4 5 0007121 3 SAMSUNG SEMICONDUCTOR INC KSR2106 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION r - 37-13 Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor (R,=10KO, R,=47KO)

Contextual Info: KSR1106 KSR1106 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=47KΩ) • Complement to KSR2106 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1106

Abstract: KSR2106
Contextual Info: KSR1106 KSR1106 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=47KΩ) • Complement to KSR2106 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

transistor A 1106

Contextual Info: K SR 1106 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit. Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, -10kfl, Rj»47ifl) • Complement to KSR2106 ABSOLUTE MAXIMUM RATINGS (TA=25t:)

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

ksd 168

Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той