KMM53681 Search Results

k3525

Abstract: km41c4100
Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AK is a 8M bit x 36 Dynamic RAM high density memory module. The • Performance Range:

KM44C4100AK

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100AKH Fast Page Mode P rG lim in S T V 8Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package ^ GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AKH is a 8M bit x 36 Dynamic RAM high density memory module. The

"30 pin simm"

Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 T b m 4 2 GQ153ÜM T3b ■ KMM53681OOH/HG SM 6 K DRAM MODULES 8M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC ICAO tRC 60ns 15ns 110ns KMM5368100H-7 70ns 20ns 130ns KMM5368100H-8 80ns

ZD 607

Contextual Info: KMM5368100H/HG DRAM MODULES 8 M x 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5368100H i s a 8 M b its x 36 D ynam ­ ic RAM high d e n sity m em ory m odule. The Sam sung KMM5368100H co n s is t o f eigh teen CMOS 4M x 4 bit

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100A1/A1G Fast Page Mode 8Mx36 DRAM SIMM Module, 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM536B100A1 is a 8M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368100A1 consists of sixteen CMOS

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368103AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5368103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung

KMM5368105BK

Abstract: EZ 648
Contextual Info: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES G EN ERA L D ESCRIPTIO N The Samsung KM M 53680 1 05BK is a 8M b it x 36 • Part Identification

KMM5368005CK

Abstract: KMM5368005CKG KMM5368105CK KMM5368105CKG
Contextual Info: KMM5368005CK/CKG KMM5368105CK/CKG DRAM MODULE KMM5368005CK/CKG & KMM5368105CK/CKG Fast Page Mode with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53680 1 05CK is a 8Mx36bits Dynamic

Contextual Info: KMM5368005CK/CKG KMM5368105CK/CKG DRAM M ODULE KM M 5 3 6 8 0 0 5CK / CKG & K M M 53681 0 5 C K / C K G Fast P a g e M o d e with E D O M o d e 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V F E A TU R ES G E N E R A L DESCRIPTION The Samsung KMM53680 1 05CK is a 8Mx36bits

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100A1/A1G Fast Page Mode 8Mx36 DRAM SIMM Module, 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5368100A1 is a 8M bit x 36 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE 32 Mega Byte KMM53681OOAKH Fast Page Mode 8M x36 DRAM SIM M , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES Performance Range: The Samsung KMM53681 OOAKH is a 8M bil x 36 1RAC 50ns 60ns 70ns 60ns D ynam ic RAM high density m em ory module. The

KMM5368100-6

Abstract: KMM5368100-8 KMM5368100-7
Contextual Info: SAMSUNG ELECTRONICS INC b7E D WÊ 7 T b m 4 S KMM5368100/G OOISETÖ ÖDE BiSflSK DRAM MODULES 8M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5368100-6 • • • • • • • tfiAC tCAC tRC 60ns 15ns 110ns KMM5368100-7

DG-20

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100AH Fast Page Mode 8Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5368100AH is a 8M bit x 36 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The

iaa 180

Contextual Info: DRAM MODULE 32 Mega Byte KMM53681OOAH Fast Page Mode 8Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AH is a 8M bit x 36 Dynamic RAM high density memory module. The • Performance Range1

KM44C4100ak

Abstract: KMM5368103A
Contextual Info: DRAM MODULE_/ 32 Mega Byte 7 KMM5368103AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION >7 FEATURES • Performance Range: The Samsung KMM5368103AK is a 8M bit x 36 Dynamic RAM high density memory module using

KMM5368103B

Abstract: 53680 KMM5368103BKG 4Mx4 DRAM
Contextual Info: KMM5368003BK/BKG KMM5368103BK/BKG DRAM MODULE KMM5368003BK/BKG $ KMM5368103BK/BKG Fast Page Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M QCAS DRAM with 300mil PKG GENERAL DESCRIPTION FEATURES The Sam sung K M M 53680 1 03BK is a 8M bit x 36 D ynam ic RAM high

KMM53680

Contextual Info: KMM5368003CK/CKG KMM5368103CK/CKG DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KMM5368103CK/CKG Revision History Version 0.1 (Nov., 1997) Changed the mode of parity check component from EDO to FP, refer to

Contextual Info: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES GENERAL DESCRIPTION The Samsung KMM53680 1 05BK is a 8M bit x 36 Dynamic RAM high density memory module. The

KMM5368003CK

Abstract: KMM5368003CKG KMM5368103CK KMM5368103CKG R/TPC 828
Contextual Info: KMM5368003CK/CKG KMM5368103CK/CKG DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KMM5368103CK/CKG Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to

HYM536410AM70

Abstract: KMM5364103AK-6 KMM53632000AKA-60 KMM53632000AK-6U KMM5364103AK-70 KMM53632000AK6 KMM5362003C-60 4MX36 KMM53616000AK 16MX36
Contextual Info: Page 1 12/09/97 AP450GX MP Server System 12/9/97 The following tables list SIMM/DIMM devices known to be compatible with the specified Intel platforms. In general, SIMM devices, which are faster than those specified for a given platform, will work although no extra performance will be realized. The memory devices

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

Contextual Info: KMM5368003CK/CKG KM M 53681 0 3 C K / C K G DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KM M 53681 0 3 C K / C K G R ev is io n H is to ry Ver si on 0.1 ( Nov., 19 97 ) : Changed the mode of parity check component from EDO to FP, refer to