KM68S Search Results

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

Contextual Info: Preliminary CMOS SRAM KM68S4000C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Data Remark June 15, 1998 Prelim inary The attached datasheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right

KM68S2000LT-12L

Abstract: KM68S2000LT-15L
Contextual Info: KM68S2000 Family Preliminary CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Date Remark Initial draft September 30, 1997 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: Preliminary CMOS SRAM KM68S2000 Family Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Initial D raft Draft Date Remark S e p te m b e r 3 0 th 1997 P relim in ary T h e attached d a ta sheets are p re pa red and ap pro ved by S A M S U N G E lectronics. S A M S U N G E le ctro nics C O ., LTD.

ti913

Abstract: 01-V08
Contextual Info: Advance KM68512B Family CMOS SRAM 64Kx# bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • The KM68S12B family is fabricated by SAMSUNG'S advanced CMOS process technology. The fam ily support various operat­ ing temperature ranges and small package type for user flexi­

FK 201

Contextual Info: Preliminary KM68S2000 Family CMOS SRAM 256Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: CM^m CMOS • Organization : 256KxS • Power Supply Voltage KM68S2000 Fam ily: 2.3-3.3V • Low Data Retention Voltage : 2V Min

KM68S2000LT-15L

Abstract: KM68S2000LT-12L
Contextual Info: KM68S2000 Family CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft September 30, 1997 Preliminary 1.0 Finalize August 27, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: Preliminary CMOS SRAM KM68S4000C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Data Remark June 15, 1998 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Contextual Info: Preliminary CMOS SRAM KM68S2000 Family Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision N o. History Initial Draft Draft Date Rem ark Septem ber 3 0 th 1997 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Contextual Info: Preliminary CMOS SRAM KM68S1000E Family Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Initial draft Septem ber 10, 1998 Prelim inary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

Contextual Info: Preliminary CMOS SRAM KM68S4000C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Data Remark June 15, 1998 Prelim inary The attached datasheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right

KM68S1000ELTGI-10L

Abstract: KM68S1000ELTGI-8L KM68S1000ELTI-10L KM68S1000ELTI-8L
Contextual Info: KM68S1000E Family CMOS SRAM Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft September 10, 1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

km68512lg

Abstract: km68512l 68512 KM68512LT
Contextual Info: KM68512ÜL-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 1(VW (typ.) L-Version 5(iW (typ.) LL-Version Operating : 35mW (typ.)

Contextual Info: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CMOS) : 550^W(Max.)L-Ver.

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -

km68512lg

Abstract: ob2535 cs250 KM68512LT 10MW KM6651
Contextual Info: SAMSUNG ELECTRONICS INC b?E J> m 7^4142 KM68512ÜL-L 00174^4 ÖQ3 « S Í I G * CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 55, 70, 85, 100ns max. • Low P ow er D issipa tion S tandby (CMOS): 10^W (typ.) L V ersion