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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: b?E V SAMSUNG ELECTRONICS INC m 7 ^ 4 1 4 5 00174^4 flG3 I ISM6K KM68512L/L-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version	OCR Scan	KM68512L/L-L 100ns KM66512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512L/L-L 288-bit KM68512Ã	PDF
KM6651 Abstract: cs250 KM68512ALI SRAM 64KX8 5V Contextual Info: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns{Max. • Low Power Dissipation Standby C M O S ): 550^W(Max.)L-Ver.	OCR Scan	KM68512ALI 64Kx8 385mW KM68512ALGI/ALGI-L 32-pin 525mil) KM68512ALTI/ALTI-L KM68512ALI/ALI-L 288-bit KM6651 cs250 SRAM 64KX8 5V	PDF
km68512lg Abstract: ob2535 cs250 KM68512LT 10MW KM6651 Contextual Info: SAMSUNG ELECTRONICS INC b?E J> m 7^4142 KM68512ÜL-L 00174^4 ÖQ3 « S Í I G * CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 55, 70, 85, 100ns max. • Low P ow er D issipa tion S tandby (CMOS): 10^W (typ.) L V ersion	OCR Scan	KM68512Ã 100ns KM68512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512UL-L 288-bit KM68512L/L-L km68512lg ob2535 cs250 KM68512LT 10MW KM6651	PDF

Catalog Datasheet

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Document Tags

PDF

Contextual Info: b?E V SAMSUNG ELECTRONICS INC m 7 ^ 4 1 4 5 00174^4 flG3 I ISM6K KM68512L/L-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version

OCR Scan

KM68512L/L-L 100ns KM66512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512L/L-L 288-bit KM68512Ã

PDF

KM6651

Abstract: cs250 KM68512ALI SRAM 64KX8 5V
Contextual Info: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns{Max. • Low Power Dissipation Standby C M O S ): 550^W(Max.)L-Ver.

OCR Scan

KM68512ALI 64Kx8 385mW KM68512ALGI/ALGI-L 32-pin 525mil) KM68512ALTI/ALTI-L KM68512ALI/ALI-L 288-bit KM6651 cs250 SRAM 64KX8 5V

PDF

km68512lg

Abstract: ob2535 cs250 KM68512LT 10MW KM6651
Contextual Info: SAMSUNG ELECTRONICS INC b?E J> m 7^4142 KM68512ÜL-L 00174^4 ÖQ3 « S Í I G * CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 55, 70, 85, 100ns max. • Low P ow er D issipa tion S tandby (CMOS): 10^W (typ.) L V ersion

OCR Scan

KM68512Ã 100ns KM68512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512UL-L 288-bit KM68512L/L-L km68512lg ob2535 cs250 KM68512LT 10MW KM6651

PDF