KM681001A Search Results
KM681001A Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KM681001A | Samsung Electronics | 128K x 8 Bit High-Speed CMOS Static RAM | Original | 167.44KB | 9 | ||
| KM681001A-15 | Samsung Electronics | 128K x 8 Bit High-Speed CMOS Static RAM | Original | 167.44KB | 9 | ||
| KM681001A-20 | Samsung Electronics | 128K x 8 Bit High-Speed CMOS Static RAM | Original | 167.44KB | 9 |
KM681001A Price and Stock
Samsung Semiconductor & Electro-Mechanics KM681001AJ-20SRAM Chip Async Single 5V 1M-bit 256K x 4-bit 20ns 28-Pin SOJ |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM681001AJ-20 | 40 |
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Samsung Semiconductor & Electro-Mechanics KM681001ASJ-15 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM681001ASJ-15 | 12 |
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Samsung Electro-Mechanics KM681001AJ-15IC,SRAM,128KX8,CMOS,SOJ,32PIN,PLASTIC |
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KM681001AJ-15 | 8 |
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Samsung Semiconductor KM681001AJ20128K X 8 BIT HIGH-SPEED CMOS STATIC RAM Standard SRAM, 128KX8, 20ns, CMOS, PDSO32 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM681001AJ20 | 2 |
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Samsung Electro-Mechanics KM681001AJ20INSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM681001AJ20 | 280 |
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KM681001A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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KM681001A
Abstract: KM681001A-15 KM681001A-20
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km681001a128kxkm681001a-15km681001a-17+4 | |
KM681001A
Abstract: KM681001A-15 KM681001A-20 KM681001AJ D0237
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km681001a128kxkm681001a-15km681001a-17+5 | |
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Contextual Info: PRELIMINARY KM681001A CMOS SRAM 1 2 8 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681001A-15 :190 mA (Max.) |
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km681001akm681001a-15km681001a-17km681001a-20+4 | |
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Contextual Info: KM681001A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation The KM681001A is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by |
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km681001a576-bitkm681001a-15km681001a-17+2 | |
KM681001AJ
Abstract: KM681001A KM681001A-15 KM681001A-20
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km681001a128kx815/17/20ns190/180/170ma+4 | |
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Contextual Info: KM681001A CMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,20ns Max. • Low Power Dissipation Standby (T U ) : 25mA(Max.) (CMOS) : BmA(Max ) Operating KM681001A - 1 5 :125mA(Max.) KM681001A - 20 : 120mA(Max.) |
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km681001a128kx125ma120ma+3 | |
KM68Contextual Info: KM681001A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 5,1 7,20 ns M ax. T h e K M 68 1 0 01 A is a 1,048,576-bit high-speed static • Low Pow er Dissipation Standby (TTL) random access m em ory organized as 1 3 1 ,07 2 words by |
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km681001a576-bitkm68 | |
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Contextual Info: CMOS SRAMI KM681001A Document Title 128Kx8 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0 |
OCR Scan |
km681001a128kx815/17/20ns190/180/170ma+1 | |
KM681001ASJContextual Info: KM681001A CMOS SRAM Document Title 128Kx8 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. H is to ry Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0 |
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km681001a128kx815/17/20ns190/180/170ma+4 | |
300mil-SOJ
Abstract: KM681001A KM681001A-15 KM681001A-20 KM681001AJ 32SOJ
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km681001a128kx815/17/20ns190/180/170ma+6 | |
01-I04
Abstract: KM641001A KM641001A-15 KM641001A-20
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km641001akm641001a-15km641001a-17km641001a-20+5 | |
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Contextual Info: PRELIMINARY KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time 15,17,20 ns(Max.) The KM641001A is a 1,048,576-bit high-speed Static • Low Power Dissipation Standby (TTL) Random Access Memory organized as 262,144 words |
OCR Scan |
km641001a576-bitkm641001a-15km641001a-17+1 | |
KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
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256kb32kx8km62256ci-5/5lkm62256cle+16 | |
ionograph
Abstract: 32256LK KM681001AJ SYS32128LK-020 ANH004 KM641001AJ
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sys32128lk-020ionograph32256lkkm681001aj+2 | |
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UM61256AK-15
Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
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cp005-1eas7c1024-12jcas7c1024-12pcas7c1024-12tjc+16 | |
um61256ak-15
Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
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at93c46-10pcat93c46-10pc-2at93c46-10scat93c46-10sc-2+16 | |
soj 36
Abstract: SOJ 44 KM68257
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km64258ckm68257c64kx432kx8+5 | |
philips diode PH 33J
Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
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10-bitqs3l384qs3l2384philips diode ph 33j+9 | |
KM62256BLG-7
Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
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c7c1334-10acis61nw6432-8tqc7c1334-5acis61nw6432-5tq+16 | |
UM61256FK-15
Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
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74f25774fct25774fct257tqs32257+11 | |
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Contextual Info: CM OS SRAM KM681001 A D o s u m e n t IB tie 1 2 8 K x 8 Hi gh S p e e d St at i c R A M 5 V O p e r a t i n g , E v o l u t i o n a r y Pin Out . O p e ra ted at C o m m e r c i a l T e m p e r a t u r e R an ge. Rev. No. History Rev. 0.0 Initial release with Design Target. |
OCR Scan |
km68100115/17/20ns190/180/170ma | |