32SOJ Search Results

K6R1008V1D

Contextual Info: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify

K6R1004C1D

Contextual Info: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

K6R4004C1D-JC

Abstract: K6R4004V1D K6R4016V1D-J
Contextual Info: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary

KM681001-25

Abstract: KM681001-20 KM681001-35 tl2245 KM681001
Contextual Info: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) Operating KM681001-20 : 170 mA(Max.) KM681001-25:150 mA(Max.)

cm 324

Abstract: KM681002A KM681002A-12 KM681002A-15 KM681002A-20 74114
Contextual Info: PRELIMINARY CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)

Contextual Info: PRELIMINARY CMOS SRAM KM64V1003A 25 6K x 4 Bit With UE High-Speed CM OS Static (3 .3 V Operating) RAM GENERAL DESCRIPTION FEATURES The KM64V1003A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words . Fast Access Tim e 12,15,17,20 ns(Max.)

KM681002

Contextual Info: CMOS SRAM KM681002 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby CTTL) : 40mA (Max.) ' (CMOS): 10mA (Max.) Operating : KM681002-15: 170mA (Max.) KM681002 -17: 160mA (Max.)

KM64BV4002J-12

Abstract: KM64BV4002J-15 KM64BV4002J-20
Contextual Info: Advanced Information BiCMOS SRAM KM64BV4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES • Fast Access Time : 12 ,1 5 , 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM 64B V4002J-12: 155mA(Max.)

Contextual Info: R reïir'ine;-/ CMOS SRAM KM681002B/BL, KM681002BI/BLI 128K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»« Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) The KM681002B/BL is a 1,048,576-bit high-speed Static Ran­

452 S77

Abstract: KM64B4002J-10 KM64B4002J-12 KM64B4002J-15 CV448 20/452 S77
Contextual Info: PRELIMINARY KM64B4002 BiCMOS SRAM 1M x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 0,1 2,15 ns(M ax.) • Low Pow er Dissipation Standby (TT L) : 6 0 m A(M ax.) (C M O S ): 3 0 m A(M ax.) O perating K M 6 4 B 40 0 2 J-1 0 : 190 m A(Max.)

KM68V1002A

Contextual Info: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM68V1002A-12 : 95mA (max.)

Contextual Info: K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I PRELIMINARY CMOS SRAM Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Extended and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

K6R1008V1C-C10

Contextual Info: PRELIMINARY P K6R1008V1C-C/C-L, K6R1008V1C-I/C-P CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Initial release with Preliminary.

300mil-SOJ

Abstract: K6R1008C1A K6R1008C1A-C12
Contextual Info: PRELIMINARY K6R1008C1A-C, K6R1008C1A-I CMOS SRAM Document Title 128Kx8 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

K6R4016V1D-J

Contextual Info: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001

Contextual Info: PRELIMINARY Preliminary PRELIMINARY K6R1008C1D-C/1D-I/D-P CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Initial release with Preliminary.

Contextual Info: PRELIMINARY Preliminary CMOS SRAM K6R4004C1C-C, K6R4004C1C-I Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

Contextual Info: PRELIMINARY Preliminary CMOS SRAM KM644002C, KM644002CI Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

K6R1008v1c-12

Contextual Info: PRELIMINARY PRELIMINARY K6R1008V1C-C/C-L, K6R1008V1C-I/C-P CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Initial release with Preliminary.

Contextual Info: PRELIMINARY K6R1004V1C-C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(3.3V Operating). Preliminary CCPCCCRCELIMINARY Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5th. 1998 Preliminary

K6R4016V1D-J

Abstract: K6R4008V1D
Contextual Info: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001

Contextual Info: PRELIMINARY CMOS SRAM KM681002A 1 2 8 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (T T l) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)

Contextual Info: KM64V1003A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns(Max ) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1003A-12: 160mA(Max.)