KM48V8104 Search Results

k2917

Contextual Info: KM48V8004C,KM48V8104C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

KM48V8004B

Abstract: KM48V8104B
Contextual Info: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

KM48V8004C

Abstract: KM48V8104C
Contextual Info: KM48V8004C,KM48V8104C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

KM48V8104A

Contextual Info: KM48V8004A, KM48V8104A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: ADVANCED CMOS DRAM KM48V8104 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C tH P C KM48V8104-5 50ns 13ns 90ns 20ns KM48V8104-6 60ns 15ns 110ns 24ns KM48V8104-7 70ns 20ns 130ns 29ns

Contextual Info: CMOS DRAM KM48V8004C,KM48V8104C 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily o f 8,3 88,60 8 x 8 bit Extended D ata O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access o f m em ory cells w ith in the sam e row. Refresh cycle 4K Ref. o r 8K Ref. , access tim e (-45, -5 o r -6), po w e r co n su m p tio n (N o rm a l

KM48V8004B

Abstract: KM48V8104B
Contextual Info: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

Contextual Info: KM48V8004A, KM48V8104A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 8,388,608 x 8 bit Extended Data O ut M ode CM OS DRAM s. Extended D ata Out M ode offers high speed random access of m em ory cells within the same row. Refresh cycle 4K Ref. o r 8K Ref. ,

31DQ6

Contextual Info: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

8104b

Contextual Info: Preliminary SPEC CMOS DRAM KM48V8004B, KM48V8104B 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily o f 8,3 88,60 8 x 8 bit Extended D ata O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access of m em o ry cells w ith in the sam e row. R efresh cycle 4 K Ref. o r 8K Ref. , access tim e (-4, -5 o r -6), po w e r co n su m p tio n (N o rm a l or

Contextual Info: KM48V8004A, KM48V8104A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 8 ,3 8 8 .6 0 8 x 8 bit E x te n d e d D a ta O u t M o d e C M O S D R A M s . E x te n d e d D a ta O u t M o d e o ffe rs high s p e e d ra n d o m a c c e s s o f m e m o ry c e lls w ith in th e sa m e row . R e fre s h c y c le 4 K R e f. o r 8 K R ef. ,

Contextual Info: KMM372F80 8 3BK/BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6

4MB DRAM

Abstract: 4MX16 1MX16
Contextual Info: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .

KM48V8004AK

Contextual Info: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F88 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: KMM 372F80 8 3BK/BS DRAM MODULE Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 KMM 372F80(8)3BK/BS DRAM MODULE Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t c acp (access time from CAS) and tAAP (access time from col. addr.) in A C C H A R A C T E R IS T IC S .

km48v8104ck

Contextual Info: DRAM MODULE KMM374F80 8 3CK3/CS3 KMM374F80(8)3CK3/CS3 EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F80(8)3CK3/CS3 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung

Contextual Info: DRAM MODULE KMM374F80 8 3BK/BS Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM374F80(8)3BK/BS Revision History Version 0.0 (Dec, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: STI648104G1-70VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI648104G1-70VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple Technology STI648104G1-70VG consist of eight CMOS 8M x

Contextual Info: KMM372F803AK/AS KMM372F883AK/AS DRAM MODULE KMM372F803AK/AS & KMM372F883AK/AS Fast Page with EDO Mode 8Mx72 DRAM DIMM with ECC based on 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F80 8 3A is a 8M bit x 72 Dynamic RAM high density memory module. The

KMM372F803CK

Abstract: KMM372f803c
Contextual Info: KMM372F80 8 3CK/CS DRAM MODULE KMM372F80(8)3CK/CS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3C consists of nine CMOS 8Mx8bits DRAMs

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

Contextual Info: DRAM MODULE KMM466F803BS2-L Revision History Version 0.0 Sept, 1997 Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS. DRAM MODULE KMM466F803BS2-L KMM466F803BS2-L EDO Mode 8M x 64 DRAM SOD IMM Using 8MX8, 4K Refresh 3.3 V, Low power/Self-Refresh

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

Contextual Info: UG48W644 8 8HSG Revision History Mar 04 , 1999 Rev - B Oct 30 , 1998 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: (510) 668-2088 Fax: (510) 661-2788