KM48S8020B Search Results

Contextual Info: KM48S8020B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

5.6V

Abstract: km-48 S8020
Contextual Info: KM48S8020B CMOS SDRAM 4M x 8Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs CAS latency 2 & 3

Contextual Info: KM48S8020B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC param eter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

54PIN

Abstract: RA12
Contextual Info: Preliminary CMOS SDRAM KM48S8020B Revision History Revision ,3 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. 1 ELECTRONICS This Material Copyrighted By Its Respective Manufacturer

RA12

Contextual Info: KM48S8020B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

Contextual Info: KM48S8020B Preliminary CMOS SDRAM Revision History Revision ,3 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. REV. 3 Nov. '97 ELECTRONICS

KM48S8020

Abstract: KMM366S1603BTL-G0
Contextual Info: KMM366S1603BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

KMM374S1603BTL-G0

Abstract: KM48S8020
Contextual Info: KMM374S1603BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

schematic circuit adsl router part list

Abstract: 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon
Contextual Info: Excellence in Low-Power The way MICOM/DSP should be KS32C5000 A /KS32C50100 32-bit RISC Microcontroller for Network Solution Mar. 1999 ELECTRONICS Contents n n n Network Protocol n What is Network ? n OSI Reference Model and TCP/IP n TCP/IP Networking Software & Basic Protocol

Contextual Info: KMM366S1603BTL PC66 SDRAM MODULE KMM366S1603BTL SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1603BTL is a 16M bit x 64 Synchro­ nous Dynamic RAM high density memory module. The Samsung

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .

Contextual Info: KMM374S803BTL PC66 SDRAM MODULE KMM374S803BTL SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S803BTL is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM374S803BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.

Contextual Info: KMM366S803BTL PC66 SDRAM MODULE KMM366S803BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S803BTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung