KM48S32230AT Search Results

Contextual Info: PC100 Unbuffered DIMM KMM366S6453AT Revision History Revision 0.1 March 23, 1999 • Package dimension and Capacitance changed. Revision 0.2 (June 11, 1999) • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: KMM374S3253ATS PC100 Unbuffered DIMM Revision History Revision 0.1 June 7, 1999 Package dimension and Capacitance changed. Revision 0.2 (July 5, 1999) • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: PC100 Unbuffered DIMM KMM366S3253ATS Revision History Revision 0.1 June 7, 1999 • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. • Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.

Contextual Info: KMM366S6453AT PC100 SDRAM MODULE KMM366S6453AT SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S6453AT is a 64M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: PC100 SDRAM MODULE KMM374S3253ATS KMM374S3253ATS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S3253ATS is a 32M bit x 72 Synchro­ • Performance range

KMM374S3253ATS-GA

Contextual Info: KMM374S3253ATS PC133 Unbuffered DIMM Revision History Revision 0.0 May, 1999 • PC133 first published. REV. 0 May 1999 KMM374S3253ATS PC133 Unbuffered DIMM KMM374S3253ATS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: Preliminary CMOS SDRAM KM48S32230A 8M X 8Bit X 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S32230A is 268,435,456 bits synchronous high data • LVTTL compatible with multiplexed address rate Dynamic RAM organized as 8 x 8,392,608 words by 8 bits,

Contextual Info: KMM374S3253ATS PC100 Unbuffered DIMM Revision History Revision 0.1 June 7, 1999 • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. • Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.

Contextual Info: KMM374S6453AT PC100 Unbuffered DIMM Revision History Revision 0.1 March 23, 1999 • Package dimension and Capacitance changed. Revision 0.2 (June 11, 1999) • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: KM48S32230A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 JUN 1999 KM48S32230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999

Contextual Info: KMM374S3253AT PC100 SDRAM MODULE KMM374S3253AT SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM374S3253AT is a 32M bit x 72 Synchro­ • Performance range

Contextual Info: Preliminary CMOS SDRAM KM48S32230A 8M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S32230A is 268,435,456 bits synchronous high data • LVTTL compatible with multiplexed address rate Dynamic RAM organized as 8 x 8,392,608 words by 8 bits,

KMM366S924BTS

Abstract: 64Mb samsung SDRAM pc133 sdram pc133 SDRAM DIMM KMM366S1723ATS-GA KMM374S823DTS-GA KM416S8030BT
Contextual Info: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT Unbuffered SDRAM DIMM 168pin PC133 4Layer SPD Specification REV. 0.2 Nov. 1999 REV. 0.2 Nov. 1999 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT KMM366S823DTS-GA ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü Organization : 8Mx64

KMM366S3253TS-GA

Contextual Info: KMM366S3253ATS PC133 Unbuffered DIMM Revision History Revision 0.0 May., 1999 • PC133 first published. REV. 0 May 1999 KMM366S3253ATS PC133 Unbuffered DIMM KMM366S3253ATS SDRAM DIMM 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: KMM374S3253AT PC100 SDRAM MODULE KMM374S3253AT SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM374S3253AT is a 32M bit x 72 Synchro­ • Performance range

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

RA12

Contextual Info: Preliminary CMOS SDRAM KM48S32230A 8M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S32230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 8 x 8,392,608 words by 8 bits,

RA12

Contextual Info: KM48S32230A Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Jan., 1999 • PC133 first published. REV. 0 Jan. '99 Preliminary PC133 CMOS SDRAM KM48S32230A 8M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply

Contextual Info: PC100 Unbuffered DIMM KMM366S6453AT Revision History Revision 0.1 March 23, 1999 • Package dimension and Capacitance changed. Revision 0.2 (June 11, 1999) • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: KMM374S6453AT PC100 Unbuffered DIMM Revision History Revision 0.1 March 23, 1999 • Package dimension and Capacitance changed. Revision 0.2 (June 11, 1999) • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: PC100 Unbuffered DIMM KMM366S3253ATS Revision History Revision 0.1 June 7, 1999 • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. • Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.

Contextual Info: KMM366S6453AT PC100 SDRAM MODULE KMM366S6453AT SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S6453AT is a 64M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

KM416S8030BT

Abstract: sAMSUNG PC100-322-620
Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered SDRAM DIMM 168pin 6 Layer SPD Specification Rev. 0.0 November 1999 Rev. 0.0 Nov. 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM • Revision History [Revision 0.0] November 18, 1999 Merged PC100 SDRAM 6 Layer Unbuffered DIMMs based 64SD D-die, 128SD M/A/B-die, 256SD A-die.

B1A12

Abstract: KMM377S6453AT-GH
Contextual Info: KMM377S6453AT SDRAM MODULE KMM377S6453AT SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S6453AT is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S6453AT consists of eighteen CMOS 32Mx8 bit