KM44C26 Search Results

Contextual Info: KM44C268C CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

MQ4A

Abstract: um227 NLMQ4
Contextual Info: KM44C268C CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Sw 2604

Abstract: ELLS11
Contextual Info: KM44C268B CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 2 6 8 B is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random A ccess M em ory. Its

Contextual Info: SAMSUNG ELE CT RONICS INC MSE D Hi 7*T_h43i42 0010110 2 B SMGK KM44C266B CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode : Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range; tR A C • • • • • • • • • •

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM44C268C 0G15S45 SO I « S P I C K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS

TCA 290

Contextual Info: '* KM44C268C CMOS DRAM 2 5 6 K X 4 Bit C M O S Dynamic R A M with Static Column M ode Write P er Bit M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM44C266C CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C266C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications

Contextual Info: KM44C266C CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: - -r I The Samsung KM44C266C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random A ccess M em ory. Its

MIN-15

Contextual Info: KM44C266C N s ’ CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: - 1-1 I rac The Samsung KM44C266C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its

Contextual Info: KM44C266B CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • • • • tRC tRAC tCAC KM 44C266B- 7 70ns 20ns 130ns KM 44C266B- 8 80ns 20ns 150ns

Contextual Info: b?E » S A M S UN G E L E C T R O N I C S INC • 7^4142 0 0 1 5 5 1 1 T3fi CMOS DRAM KM44C266C 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: tnAC I cac tnc KM44C266C-6 60ns 15ns

Contextual Info: SAMSUNG ELECTRONICS INC 42 E D O f 7Sb41_42 £ 0 1 0 1 4 1 KM44C288B 2 MStlGK CMOS DRAM Lfio'ZS-tS 256K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268B is a high speed CMOS

LC324256-10

Abstract: lh64256 HY534256-60 LC324256-12 514258 HY534256-10 km44c256c Z80A HY51C4258L-12 HY51C4258L-85
Contextual Info: - 2121M CMOS 7s m & î± CO A Dynamic -f* y / RAM 2 6 2 1 4 4 x 4 n ft TRAC isax (ns) TRCY min (ns) TCAll min (ns) TAH min (ns) TP min (ns) T#CY (ns) T M min (ns) TRWC min (ns) V D D or V C C (V) 2 IDD max (mA) 0 PIN K f) m I DD STANDBY ( I SB/ I SB2) (mA)

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC